[go: up one dir, main page]

CA2304859A1 - Ensemble barreau pour diode laser a semi-conducteur - Google Patents

Ensemble barreau pour diode laser a semi-conducteur Download PDF

Info

Publication number
CA2304859A1
CA2304859A1 CA002304859A CA2304859A CA2304859A1 CA 2304859 A1 CA2304859 A1 CA 2304859A1 CA 002304859 A CA002304859 A CA 002304859A CA 2304859 A CA2304859 A CA 2304859A CA 2304859 A1 CA2304859 A1 CA 2304859A1
Authority
CA
Canada
Prior art keywords
assembly
diode bar
base plate
heat sink
sub
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002304859A
Other languages
English (en)
Inventor
Peter Hutchinson Hall
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Leonardo UK Ltd
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2304859A1 publication Critical patent/CA2304859A1/fr
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/02365—Fixing laser chips on mounts by clamping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4018—Lasers electrically in series

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Semiconductor Lasers (AREA)

Abstract

On décrit un ensemble barreau pour diode laser à semi-conducteur qui comprend une plaque support (2) en cuivre sur laquelle sont montés plusieurs caloducs (3) pour répartir la chaleur à l'intérieur de la plaque support à partir d'une région située au-dessous d'un barreau (4) monté sur la plaque support. L'ensemble (1) est monté sur un dissipateur de chaleur (7) et isolé électriquement de ce dernier par une couche isolante. L'intégration des caloducs dans la plaque support de l'ensemble (ladite plaque support formant une électrode pour le barreau de la diode) permet un refroidissement plus efficace du barreau de la diode (4).
CA002304859A 1997-09-26 1998-09-14 Ensemble barreau pour diode laser a semi-conducteur Abandoned CA2304859A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB9720376.4 1997-09-26
GBGB9720376.4A GB9720376D0 (en) 1997-09-26 1997-09-26 A semi-conductor laser diode bar assembly
PCT/GB1998/002782 WO1999017411A1 (fr) 1997-09-26 1998-09-14 Ensemble barreau pour diode laser a semi-conducteur

Publications (1)

Publication Number Publication Date
CA2304859A1 true CA2304859A1 (fr) 1999-04-08

Family

ID=10819610

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002304859A Abandoned CA2304859A1 (fr) 1997-09-26 1998-09-14 Ensemble barreau pour diode laser a semi-conducteur

Country Status (6)

Country Link
EP (1) EP1018196A1 (fr)
JP (1) JP2001518722A (fr)
CA (1) CA2304859A1 (fr)
GB (2) GB9720376D0 (fr)
IL (1) IL135213A0 (fr)
WO (1) WO1999017411A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4646166B2 (ja) * 2000-11-08 2011-03-09 古河電気工業株式会社 レーザダイオードモジュールからなる光源
DE10061265A1 (de) 2000-12-06 2002-06-27 Jenoptik Jena Gmbh Diodenlaseranordnung
JP2002280659A (ja) 2001-03-16 2002-09-27 Furukawa Electric Co Ltd:The レーザダイオードモジュールからなる光源

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE8908049U1 (de) * 1989-07-01 1989-08-24 Carl Zeiss, 89518 Heidenheim Kühleinrichtung für Halbleiterpumplichtquellen
US5105429A (en) * 1990-07-06 1992-04-14 The United States Of America As Represented By The Department Of Energy Modular package for cooling a laser diode array
US5107091A (en) * 1990-09-14 1992-04-21 Applied Solar Energy Corporation Laser diode array mounting module
US5105430A (en) * 1991-04-09 1992-04-14 The United States Of America As Represented By The United States Department Of Energy Thin planar package for cooling an array of edge-emitting laser diodes
US5253260A (en) * 1991-12-20 1993-10-12 Hughes Aircraft Company Apparatus and method for passive heat pipe cooling of solid state laser heads
US5309457A (en) * 1992-12-22 1994-05-03 Minch Richard B Micro-heatpipe cooled laser diode array
DE4315580A1 (de) * 1993-05-11 1994-11-17 Fraunhofer Ges Forschung Anordnung aus Laserdioden und einem Kühlsystem sowie Verfahren zu deren Herstellung
US5764675A (en) * 1994-06-30 1998-06-09 Juhala; Roland E. Diode laser array
FR2741208B1 (fr) * 1995-11-13 1997-12-05 Commissariat Energie Atomique Assemblage de barrettes de diodes laser refroidies

Also Published As

Publication number Publication date
GB2329758A8 (en) 1999-06-29
GB9720376D0 (en) 1997-11-26
WO1999017411A1 (fr) 1999-04-08
GB9819708D0 (en) 1998-11-04
GB2329758B (en) 1999-08-25
EP1018196A1 (fr) 2000-07-12
GB2329758A (en) 1999-03-31
IL135213A0 (en) 2001-05-20
JP2001518722A (ja) 2001-10-16

Similar Documents

Publication Publication Date Title
US5991162A (en) High-frequency integrated circuit device and manufacture method thereof
US7557442B2 (en) Power semiconductor arrangement
US6826916B2 (en) Laser module, Peltier module, and Peltier module integrated heat spreader
JP4766588B2 (ja) 空間パワーコンバイナのためのパワーマネージメント
CN110809841B (zh) 半导体激光装置
US20120092833A1 (en) Led heat-conducting substrate and its thermal module
US20080099777A1 (en) Light-emitting devices and related systems
US6943293B1 (en) High power electronic package with enhanced cooling characteristics
US20080056314A1 (en) High-power laser-diode package system
KR102282209B1 (ko) 장착 조립체 및 조명 디바이스
US5031184A (en) Cooling arrangement for a semiconductor pump source
KR20170118599A (ko) 반도체 장치의 방열구조
EP1025748B1 (fr) Element supportant une puce et utilisation de cet element
CA2304859A1 (fr) Ensemble barreau pour diode laser a semi-conducteur
JPH0864733A (ja) 印刷配線板組立体
KR20100102661A (ko) 반도체 레이저 장치
CN111354684A (zh) 一种芯片基板及其制作方法、封装芯片及其封装方法
US8906748B2 (en) Method for packaging a semiconductor structure
JP6873157B2 (ja) 熱ブロックアセンブリ、それを有するｌｅｄ装置、及び熱ブロックアセンブリを製造する方法
CN114630571B (zh) 一种光模块侧面散热结构
JP4192619B2 (ja) 発光ダイオードランプ装置
JP2017045959A (ja) 高周波半導体装置用パッケージおよび高周波半導体装置
KR102553052B1 (ko) 방열형 회로기판 및 그 제조 방법
JP2014170834A (ja) パワー半導体の放熱構造およびこれを用いたオーディオ装置
US20240243545A1 (en) Systems and methods for cooling high power devices

Legal Events

Date Code Title Description
FZDE Discontinued