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CA2241684A1 - Short channel fermi-threshold field effect transistors including drain field termination region and methods of fabricating same - Google Patents

Short channel fermi-threshold field effect transistors including drain field termination region and methods of fabricating same

Info

Publication number
CA2241684A1
CA2241684A1 CA002241684A CA2241684A CA2241684A1 CA 2241684 A1 CA2241684 A1 CA 2241684A1 CA 002241684 A CA002241684 A CA 002241684A CA 2241684 A CA2241684 A CA 2241684A CA 2241684 A1 CA2241684 A1 CA 2241684A1
Authority
CA
Canada
Prior art keywords
region
drain
channel
source
drain field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA002241684A
Other languages
French (fr)
Other versions
CA2241684C (en
Inventor
Michael William Dennen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thunderbird Technologies Inc
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/597,711 external-priority patent/US5698884A/en
Application filed by Individual filed Critical Individual
Publication of CA2241684A1 publication Critical patent/CA2241684A1/en
Application granted granted Critical
Publication of CA2241684C publication Critical patent/CA2241684C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/027—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs
    • H10D30/0278—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs forming single crystalline channels on wafers after forming insulating device isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/637—Lateral IGFETs having no inversion channels, e.g. buried channel lateral IGFETs, normally-on lateral IGFETs or depletion-mode lateral IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/371—Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

A Fermi-FET includes a drain field termination region between the source and drain regions, to reduce and preferably prevent injection of carriers from the source region into the channel as.a result of drain bias.
The drain field terminating region prevents excessive drain induced barrier lowering while still allowing low vertical field in the channel. The drain field terminating region is preferably embodied by a buried counterdoped layer between the source and drain regions, extending beneath the substrate surface from the source region to the drain region. The buried counterdoped layer may be formed using a three tub structure which produces three layers between the spaced apart source and drain regions. The drain field terminating region may also be used in a conventional MOSFET. The channel region is preferably formed by epitaxial deposition, so that the channel region need not be counterdoped relative to the drain field terminating region. Higher carrier mobility in the channel may thereby be obtained for a given doping level.
CA002241684A 1996-02-07 1997-02-04 Short channel fermi-threshold field effect transistors including drain field termination region and methods of fabricating same Expired - Fee Related CA2241684C (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/597,711 US5698884A (en) 1996-02-07 1996-02-07 Short channel fermi-threshold field effect transistors including drain field termination region and methods of fabricating same
US08/597,711 1996-02-07
PCT/US1997/002108 WO1997029519A1 (en) 1996-02-07 1997-02-04 Short channel fermi-threshold field effect transistors including drain field termination region and methods of fabricating same

Publications (2)

Publication Number Publication Date
CA2241684A1 true CA2241684A1 (en) 1997-08-14
CA2241684C CA2241684C (en) 2006-08-01

Family

ID=36764337

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002241684A Expired - Fee Related CA2241684C (en) 1996-02-07 1997-02-04 Short channel fermi-threshold field effect transistors including drain field termination region and methods of fabricating same

Country Status (1)

Country Link
CA (1) CA2241684C (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109936355A (en) * 2018-02-28 2019-06-25 恩智浦美国有限公司 RF switches, integrated circuits and devices, and methods of making the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109936355A (en) * 2018-02-28 2019-06-25 恩智浦美国有限公司 RF switches, integrated circuits and devices, and methods of making the same
CN109936355B (en) * 2018-02-28 2023-04-25 恩智浦美国有限公司 RF switch, integrated circuit and device and method of manufacturing the same

Also Published As

Publication number Publication date
CA2241684C (en) 2006-08-01

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Legal Events

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