[go: up one dir, main page]

CA2033246C - Dispositif optique a semiconducteur - Google Patents

Dispositif optique a semiconducteur

Info

Publication number
CA2033246C
CA2033246C CA 2033246 CA2033246A CA2033246C CA 2033246 C CA2033246 C CA 2033246C CA 2033246 CA2033246 CA 2033246 CA 2033246 A CA2033246 A CA 2033246A CA 2033246 C CA2033246 C CA 2033246C
Authority
CA
Canada
Prior art keywords
stripe
layer
semi
mesa structure
insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CA 2033246
Other languages
English (en)
Inventor
Akira Ajisawa
Tomoji Terakado
Masayuki Yamaguchi
Keiro Komatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of CA2033246C publication Critical patent/CA2033246C/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
CA 2033246 1989-12-27 1990-12-27 Dispositif optique a semiconducteur Expired - Fee Related CA2033246C (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1340101A JP2540964B2 (ja) 1989-12-27 1989-12-27 光変調器と集積型光変調器と光検出器及びその製造方法
JP1-340101 1989-12-27

Publications (1)

Publication Number Publication Date
CA2033246C true CA2033246C (fr) 1995-05-30

Family

ID=18333729

Family Applications (1)

Application Number Title Priority Date Filing Date
CA 2033246 Expired - Fee Related CA2033246C (fr) 1989-12-27 1990-12-27 Dispositif optique a semiconducteur

Country Status (2)

Country Link
JP (1) JP2540964B2 (fr)
CA (1) CA2033246C (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2726204B2 (ja) * 1992-09-24 1998-03-11 日本電信電話株式会社 半導体導波路型素子の製造法
JPH11220205A (ja) * 1998-01-30 1999-08-10 Sharp Corp 半導体レーザ素子及びその製造方法
JP4828018B2 (ja) * 2000-11-06 2011-11-30 三菱電機株式会社 光変調器およびその製造方法並びに光半導体装置
US8358891B2 (en) 2007-12-14 2013-01-22 Nec Corporation Waveguide type optical device
CN103430084A (zh) * 2011-03-17 2013-12-04 日本碍子株式会社 光调制元件
JP5906593B2 (ja) * 2011-06-27 2016-04-20 富士通株式会社 光半導体集積素子の製造方法

Also Published As

Publication number Publication date
JPH03198025A (ja) 1991-08-29
JP2540964B2 (ja) 1996-10-09

Similar Documents

Publication Publication Date Title
EP0437836B1 (fr) Dispositif optique semi-conducteur
CA2081898C (fr) Dispositif opto-electronique
EP0378098B1 (fr) Dispositif optique à semi-conducteur
JP2870632B2 (ja) 半導体光集積回路およびその製造方法
US8847357B2 (en) Opto-electronic device
EP0672932B1 (fr) Modulateur optique à semi-conducteur
CA2165711C (fr) Source lumineuse a semiconducteurs produisant une lumiere tres puissante, a spectre large
US6391671B2 (en) Method of producing an optical semiconductor device having a waveguide layer buried in an InP current blocking layer
Wang et al. 1.55-μm AlGaInAs-InP laterally coupled distributed feedback laser
CA2033246C (fr) Dispositif optique a semiconducteur
JP2827411B2 (ja) 光半導体素子及びその製造方法
US6931041B2 (en) Integrated semiconductor laser device and method of manufacture thereof
US6509580B2 (en) Semiconductor device with current confinement structure
US20050185689A1 (en) Optoelectronic device having a Discrete Bragg Reflector and an electro-absorption modulator
Kasahara et al. Monolithically integrated high-speed light source using 1.3-µm wavelength DFB-DC-PBH laser
JPH06112595A (ja) 半導体光機能素子の製造方法
JP2605911B2 (ja) 光変調器及び光検出器
EP1372229B1 (fr) Element integré composé d'un laser semiconducteur et d'un guide d'ondes
JP7444290B2 (ja) 半導体光素子
JP2001148542A (ja) 光半導体装置及びその製造方法並びに光通信装置
KR100228395B1 (ko) 반절연 인듐갈륨비소 회절격자를 이용한 복소 결합된 분포 궤환형 레이저 소자
Sun et al. Influence of wavelength detuning on device performance of electroabsorption modulator integrated distributed feedback lasers based on identical epitaxial layer approach
KR20050073383A (ko) 전계흡수형 변조기가 집적된 레이저 장치 및 그 제조방법
Xiong et al. Low-threshold DFB-laser-integrated high-speed EA modulators based on ridge waveguide structure by ICP etching
JP2000156539A (ja) 光半導体素子及びその製造方法

Legal Events

Date Code Title Description
EEER Examination request
MKLA Lapsed