CA1213950A - Millimeter wave dielectric resonator and method of making - Google Patents
Millimeter wave dielectric resonator and method of makingInfo
- Publication number
- CA1213950A CA1213950A CA000458994A CA458994A CA1213950A CA 1213950 A CA1213950 A CA 1213950A CA 000458994 A CA000458994 A CA 000458994A CA 458994 A CA458994 A CA 458994A CA 1213950 A CA1213950 A CA 1213950A
- Authority
- CA
- Canada
- Prior art keywords
- waveguide
- dielectric constant
- millimeter wave
- plastic
- high dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 3
- 239000000463 material Substances 0.000 claims abstract description 20
- 239000004033 plastic Substances 0.000 claims abstract description 17
- 229920003023 plastic Polymers 0.000 claims abstract description 17
- -1 polyethylene Polymers 0.000 claims abstract description 12
- 229910052582 BN Inorganic materials 0.000 claims abstract description 11
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000003822 epoxy resin Substances 0.000 claims abstract description 10
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 10
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Natural products C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000004925 Acrylic resin Substances 0.000 claims abstract description 7
- 229920000178 Acrylic resin Polymers 0.000 claims abstract description 7
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 7
- 239000004698 Polyethylene Substances 0.000 claims abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229920000573 polyethylene Polymers 0.000 claims abstract description 7
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims abstract description 7
- 239000010453 quartz Substances 0.000 claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- 239000010703 silicon Substances 0.000 claims abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229920001577 copolymer Polymers 0.000 claims abstract description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 8
- 239000002184 metal Substances 0.000 abstract description 8
- 230000010355 oscillation Effects 0.000 description 4
- 238000009413 insulation Methods 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229920006026 co-polymeric resin Polymers 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
Landscapes
- Control Of Motors That Do Not Use Commutators (AREA)
Abstract
ABSTRACT OF THE DISCLOSURE
Low cost millimeter wave dielectric resonators are made by imbedding a two terminal negative resistance device in a plastic waveguide loaded with a high dielectric constant material. The material of the waveguide may be polytetraflouroethylene, polyethylene, styrene copolymer, epoxy resin or acrylic resin. The high dielectric constant material may be aluminum oxide, silicon, gallium arsenide, boron nitride or quartz. The waveguide is easily machinable, has a high dielectric constant and is much less expensive than a metal walled cavity.
Low cost millimeter wave dielectric resonators are made by imbedding a two terminal negative resistance device in a plastic waveguide loaded with a high dielectric constant material. The material of the waveguide may be polytetraflouroethylene, polyethylene, styrene copolymer, epoxy resin or acrylic resin. The high dielectric constant material may be aluminum oxide, silicon, gallium arsenide, boron nitride or quartz. The waveguide is easily machinable, has a high dielectric constant and is much less expensive than a metal walled cavity.
Description
This invention relates to a method o~ making a low cost millimeter wave dielectric resonator and to the low cost millimeter wave dielectric resonator so made.
Present day millimeter wave resonator~ are comprised of a Gunn or IMPATrr diode mounted in a metal cavity and cost about $3,000 for a single unit because of precision machining required for the cavity walls.
The general aim of this invention is the provision of lower cost millimeter wave resonators.
According to one aspect the present invention provides a method of making a low cost millimeter w2ve dielectric resonator comprising imbedding a two terminal negative resistance device in a plastic waveguide comprising a material selected from the group consisting of polytetrafluoroethylene, polyethylene, styrene copolymer, an epoxy resin and acrylic resin, loaded with high dielectric constant material selected from the group consisting of aluminum oxide, silicon, gallium arsenide, boron nitride and quartz loaded with high dielectric constant materialO
According to another aspect the present invention provides a low cost millimeter wave dielectric resonator comprising a two terminal negative resistance device imbedded in a plastic waveguide comprising a material selected from the group consisting of polytetrafluoroethylene, polyethylene, styrene copolymer, an epoxy resin and acrylic resin, loaded with high dielectric constant material selected from the group consis~ing of aluminum oxide, silicon, gallium arsenidel boron nitride and quartz.
The dielectric resonator so constructed is easily machined due to its organic type binder and also has a higher dielectric constant when loaded with a material having a high dielectric constant, for example a material with a constant of abo~e 3.5 such as aluminum oxide, silicon, gallium arsenide, boron nitride, or quartz. The plastic waveguide may be a material selected from the group consisting of polytetrafluoroethylene, polyethylene, styrene copolymer, epoxy resin and acrylic resin.
The conbination of low dielectric constant plastic plus higher dielectric constant material has the property of being easily machinable, while at the same time having the electromagnetic properties of the refractory high dielectric constant material.
The cost of the dielectric resonator made of plastic and heavily loaded with a high dielectric constant powder is about one hundreth of the cost of the metal walled cavity.
In the accompanying drawings, which illustrate an exemplary embodiment of the present invention:
Figure 1 shows a plastic dielectric waveguide; and Figure 2 shows a low cost millimeter wave oscillator in which a two terminal negative resistance device is imbedded in the plastic dielectric waveguide.
Referring to Figure 1, the pla~tic dielectric waveg~ide 10 is formed by adding an epoxy resin that has a low dielectric constant, less than 3.5, drop by drop into a higher dielectric constant boron nitride 12 and mixing thoroughly until the entire mixture uniformly consists as a thick paste. The paste is placed in a mold that has been prepared with a general purpose silicon rubber making sure that no air bubbles are entrapped in the mold~
5a5~
The mixture i9 cured for one hour at 250C and the boron nitride filled plastic dielectric releasecl from the mold.
Referring to Figure 2, a gallium arsenide Gunn Diode 16 is imbedded in a hole in plastic clielectric waveguide 10 to form a low cost millimeter wave cavity l~u A resonant tuning transformer disc 20 is used to enhance the power transfer from Gunn Diode 16 to plastic dielectric waveguide 10. A holder 22 is positioned around the entire assembly to provide shielding but is not the primary means of generating osci~lations. A bias lead 24 provides voltage to the Gunn Diode 16~ A layer of insulation 26 surrounds bias lead 24 and provides DC isolation from ~ias lead 24 to holder 22. The layer of insulation 25 also provides an RF short between bias lead 24 and holder 22. A metal holder 28 surrounds the layer of insulation 26 and also makes a direct electrical contact to the holder 22. The plastic dielectric waveguide 10 with resonant tuning transformer disc 20 and Gunn Diode 16 is the primary resonant source of oscillations.
The mechanism o~ oscillation in this invention is as follows. The diode, 16, acts as the negative resistance source.
The tuning disc, 20, is a resonator for oscillations so that the waves reflect back and forth in the region between the disc and the ground plane. Since the high dielectric constant plastic dielectric waveguide material (10) is in the cavity region, the electromagnetic waves are transmitted out through the dielectric waveguide. The higher the dielectric constant, the more readily coupling occurs.
This is similar to what occurs in a metal walled cavity where oscillations are built up by reflections and the power exits through a coupler, which consists of an aperture in the front wall, into a metal waveguide~ The high dielectric constant disc cavity is much lower in C05t however and hence advantageous in many applications~ In experimentation with plastic-high dielectric constant powder resonators with Gunn Diodes at 60 GHZ a power output of greater than 0O34 milliwatts is measured. This is useable for so~e local oscillator applications. It also represents a significant breakthrough in that previously oscillators have been conqtructed with the Gunn Diode placed in a metal walled cavity~ Here, the metal walled cavity i5 no longer necessary.
It is ~o be understood that various embodiments of the invention may be constructed within the scope of the present invention. For example, while the described waveguide incorporates boron nitride as a high dielectric constant material, other materials, including aluminum oxidel silicon, gallium arsenide and quartz are also suitable. Various organic materials can be used as binders, for example polytetraflouroethylene, polyethylene, styrene copolymer and acrylic resin as well as the epoxy resin of the exemplary embodimenta
Present day millimeter wave resonator~ are comprised of a Gunn or IMPATrr diode mounted in a metal cavity and cost about $3,000 for a single unit because of precision machining required for the cavity walls.
The general aim of this invention is the provision of lower cost millimeter wave resonators.
According to one aspect the present invention provides a method of making a low cost millimeter w2ve dielectric resonator comprising imbedding a two terminal negative resistance device in a plastic waveguide comprising a material selected from the group consisting of polytetrafluoroethylene, polyethylene, styrene copolymer, an epoxy resin and acrylic resin, loaded with high dielectric constant material selected from the group consisting of aluminum oxide, silicon, gallium arsenide, boron nitride and quartz loaded with high dielectric constant materialO
According to another aspect the present invention provides a low cost millimeter wave dielectric resonator comprising a two terminal negative resistance device imbedded in a plastic waveguide comprising a material selected from the group consisting of polytetrafluoroethylene, polyethylene, styrene copolymer, an epoxy resin and acrylic resin, loaded with high dielectric constant material selected from the group consis~ing of aluminum oxide, silicon, gallium arsenidel boron nitride and quartz.
The dielectric resonator so constructed is easily machined due to its organic type binder and also has a higher dielectric constant when loaded with a material having a high dielectric constant, for example a material with a constant of abo~e 3.5 such as aluminum oxide, silicon, gallium arsenide, boron nitride, or quartz. The plastic waveguide may be a material selected from the group consisting of polytetrafluoroethylene, polyethylene, styrene copolymer, epoxy resin and acrylic resin.
The conbination of low dielectric constant plastic plus higher dielectric constant material has the property of being easily machinable, while at the same time having the electromagnetic properties of the refractory high dielectric constant material.
The cost of the dielectric resonator made of plastic and heavily loaded with a high dielectric constant powder is about one hundreth of the cost of the metal walled cavity.
In the accompanying drawings, which illustrate an exemplary embodiment of the present invention:
Figure 1 shows a plastic dielectric waveguide; and Figure 2 shows a low cost millimeter wave oscillator in which a two terminal negative resistance device is imbedded in the plastic dielectric waveguide.
Referring to Figure 1, the pla~tic dielectric waveg~ide 10 is formed by adding an epoxy resin that has a low dielectric constant, less than 3.5, drop by drop into a higher dielectric constant boron nitride 12 and mixing thoroughly until the entire mixture uniformly consists as a thick paste. The paste is placed in a mold that has been prepared with a general purpose silicon rubber making sure that no air bubbles are entrapped in the mold~
5a5~
The mixture i9 cured for one hour at 250C and the boron nitride filled plastic dielectric releasecl from the mold.
Referring to Figure 2, a gallium arsenide Gunn Diode 16 is imbedded in a hole in plastic clielectric waveguide 10 to form a low cost millimeter wave cavity l~u A resonant tuning transformer disc 20 is used to enhance the power transfer from Gunn Diode 16 to plastic dielectric waveguide 10. A holder 22 is positioned around the entire assembly to provide shielding but is not the primary means of generating osci~lations. A bias lead 24 provides voltage to the Gunn Diode 16~ A layer of insulation 26 surrounds bias lead 24 and provides DC isolation from ~ias lead 24 to holder 22. The layer of insulation 25 also provides an RF short between bias lead 24 and holder 22. A metal holder 28 surrounds the layer of insulation 26 and also makes a direct electrical contact to the holder 22. The plastic dielectric waveguide 10 with resonant tuning transformer disc 20 and Gunn Diode 16 is the primary resonant source of oscillations.
The mechanism o~ oscillation in this invention is as follows. The diode, 16, acts as the negative resistance source.
The tuning disc, 20, is a resonator for oscillations so that the waves reflect back and forth in the region between the disc and the ground plane. Since the high dielectric constant plastic dielectric waveguide material (10) is in the cavity region, the electromagnetic waves are transmitted out through the dielectric waveguide. The higher the dielectric constant, the more readily coupling occurs.
This is similar to what occurs in a metal walled cavity where oscillations are built up by reflections and the power exits through a coupler, which consists of an aperture in the front wall, into a metal waveguide~ The high dielectric constant disc cavity is much lower in C05t however and hence advantageous in many applications~ In experimentation with plastic-high dielectric constant powder resonators with Gunn Diodes at 60 GHZ a power output of greater than 0O34 milliwatts is measured. This is useable for so~e local oscillator applications. It also represents a significant breakthrough in that previously oscillators have been conqtructed with the Gunn Diode placed in a metal walled cavity~ Here, the metal walled cavity i5 no longer necessary.
It is ~o be understood that various embodiments of the invention may be constructed within the scope of the present invention. For example, while the described waveguide incorporates boron nitride as a high dielectric constant material, other materials, including aluminum oxidel silicon, gallium arsenide and quartz are also suitable. Various organic materials can be used as binders, for example polytetraflouroethylene, polyethylene, styrene copolymer and acrylic resin as well as the epoxy resin of the exemplary embodimenta
Claims (6)
PRIVILEGE IS CLAIMED ARE DEFINED AS FOLLOWS:
1. A method of making a low cost millimeter wave dielectric resonator comprising imbedding a two terminal negative resistance device in a plastic waveguide comprising a material selected from the group consisting of polytetrafluoroethylene, polyethylene, styrene copolymer, an epoxy resin and acrylic resin, loaded with high dielectric constant material selected from the group consisting of aluminum oxide, silicon, gallium arsenide, boron nitride and quartz loaded with high dielectric constant material.
2. A method according to Claim 1 wherein the two terminal negative resistance device is a Gunn Diode.
3. A method according to Claim 1 wherein the plastic dielectric waveguide is comprised of a uniform mixture of boron nitride and epoxy resin.
4. A low cost millimeter wave dielectric resonator comprising a two terminal negative resistance device imbedded in a plastic waveguide comprising a material selected from the group consisting of polytetrafluoroethylene, polyethylene, styrene copolymer, an epoxy resin and acrylic resin, loaded with high dielectric constant material selected from the group consisting of aluminum oxide, silicon, gallium arsenide, boron nitride and quartz.
5. A low cost millimeter wave dielectric resonator according to Claim 4 wherein the two terminal negative resistance device is a Gunn Diode.
6. A low cost millimeter wave dielectric resonator according to Claim 4 wherein the plastic dielectric waveguide is comprised of a uniform mixture of boron nitride and epoxy resin.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US55361183A | 1983-11-21 | 1983-11-21 | |
| US553,611 | 1983-11-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1213950A true CA1213950A (en) | 1986-11-12 |
Family
ID=24210069
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000458994A Expired CA1213950A (en) | 1983-11-21 | 1984-07-16 | Millimeter wave dielectric resonator and method of making |
Country Status (1)
| Country | Link |
|---|---|
| CA (1) | CA1213950A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5753358A (en) * | 1994-08-25 | 1998-05-19 | W. L. Gore & Associates, Inc. | Adhisive-filler polymer film composite |
| US5766750A (en) * | 1994-08-25 | 1998-06-16 | W. L. Gore & Associates, Inc. | Process for making an adhesive-filler polymer film composite |
| US5879794A (en) * | 1994-08-25 | 1999-03-09 | W. L. Gore & Associates, Inc. | Adhesive-filler film composite |
| US6143401A (en) * | 1996-11-08 | 2000-11-07 | W. L. Gore & Associates, Inc. | Electronic chip package |
-
1984
- 1984-07-16 CA CA000458994A patent/CA1213950A/en not_active Expired
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5753358A (en) * | 1994-08-25 | 1998-05-19 | W. L. Gore & Associates, Inc. | Adhisive-filler polymer film composite |
| US5766750A (en) * | 1994-08-25 | 1998-06-16 | W. L. Gore & Associates, Inc. | Process for making an adhesive-filler polymer film composite |
| US5879794A (en) * | 1994-08-25 | 1999-03-09 | W. L. Gore & Associates, Inc. | Adhesive-filler film composite |
| US6143401A (en) * | 1996-11-08 | 2000-11-07 | W. L. Gore & Associates, Inc. | Electronic chip package |
| US6544638B2 (en) | 1996-11-08 | 2003-04-08 | Gore Enterprise Holdings, Inc. | Electronic chip package |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |