CA1105093A - Laser deposition of metal upon transparent materials - Google Patents
Laser deposition of metal upon transparent materialsInfo
- Publication number
- CA1105093A CA1105093A CA310,046A CA310046A CA1105093A CA 1105093 A CA1105093 A CA 1105093A CA 310046 A CA310046 A CA 310046A CA 1105093 A CA1105093 A CA 1105093A
- Authority
- CA
- Canada
- Prior art keywords
- metal
- substrate
- laser
- transparent
- materials
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000002184 metal Substances 0.000 title claims abstract description 35
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 35
- 230000008021 deposition Effects 0.000 title abstract description 9
- 239000012780 transparent material Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 239000000463 material Substances 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 22
- 238000000151 deposition Methods 0.000 claims abstract description 15
- 239000011521 glass Substances 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 230000005855 radiation Effects 0.000 claims description 3
- 230000008016 vaporization Effects 0.000 abstract description 2
- 238000009834 vaporization Methods 0.000 abstract description 2
- 238000005286 illumination Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 5
- 239000005357 flat glass Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- RMCCONIRBZIDTH-UHFFFAOYSA-N 2-(2-methylprop-2-enoyloxy)ethyl 1,3-dioxo-2-benzofuran-5-carboxylate Chemical compound CC(=C)C(=O)OCCOC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 RMCCONIRBZIDTH-UHFFFAOYSA-N 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/04—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching
- H05K3/046—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/06—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals
- C03C17/09—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals by deposition from the vapour phase
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/048—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Laser Beam Processing (AREA)
- Surface Treatment Of Glass (AREA)
Abstract
LASER DEPOSITION OF METAL UPON TRANSPARENT MATERIALS
Abstract A method and apparatus are disclosed for selectively depositing metal upon materials transparent to laser illum-ination. A laser is oriented to direct a beam of light through a transparent substrate for impact upon a metal surface or reservoir located adjacent the opposite side of the substrate. The laser heats the metal causing vaporization of metal which is then redeposited upon the adjacent surface of the transparent substrate. The laser can be selectively deflected for providing a capability of selected deposition of lines of metal or writing on the substrate. The system and method can be utilized for deposition of other materials, as well.
Abstract A method and apparatus are disclosed for selectively depositing metal upon materials transparent to laser illum-ination. A laser is oriented to direct a beam of light through a transparent substrate for impact upon a metal surface or reservoir located adjacent the opposite side of the substrate. The laser heats the metal causing vaporization of metal which is then redeposited upon the adjacent surface of the transparent substrate. The laser can be selectively deflected for providing a capability of selected deposition of lines of metal or writing on the substrate. The system and method can be utilized for deposition of other materials, as well.
Description
Background of the Invention 16 Field of the Invention 17 The present invention relates ~o a metho~ of selectively 18 depositing metal or othar materials upon a transparent or 19 txanslucent substrate. More particularly, the invention relates to a method and apparatus adapted for utilizing a 21 laser beam to selectively deposit metal upon transparent 22 materials in desired patterns.
23 History of the Prlor Art 24 Laser beams have been utilized in various applications as light sources, and as machining devices in connection 26 with metal and/or softer materials. In particular, U. S.
27 Patent No. 4,000,492 describes a laser machining system 28 wherein~a lase~ bearn is utili~ed as a source of pulses of 29 coherent radiation directed to form discrete holés in a ~ metal~material.~
, " ' :
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~L3L~S ~ 3 Other laser systems have been utilized in image recording tech-niques. For example, U. S. Patent No. 4,001,840 describes a digital laser used in recording and reading apparatus.
In addition to these diverse applications of laser technology U. S. Patent No. 3,560,258 to Brisman discloses a technique of deposi-ting materials in patterns by use of laser radiation and IBM* Tech-nical Disclosure Bulletin, Vol. 8, No. 2, July 1965 to Potts et al.
discloses a technique of inducing evaporation of materials for depo-sition, utilizing a 1aser source.
The Potts device, in particular, contemplates a technique for forming interconnection patterns on a substrate by placing opposite the substrate a filrn of evaporizable materials disposed on a glass plate. A laser beam of energy scans the metallic fi1m through the glass plate to selectively evaporate portions of the film which then deposit upon the semiconductor substrate in accordance with the desired pattern. The Brisman technique appears to be useful but it has certain limitations in manufacturing performance. For example, the thickness of the film must be carefully controlled in order to yield a desired thickness on the substrate, and the placement of the film with respect to the substrate is likewise critical. Since the film is not re-useable the method would be relatively expensive. Finally, the location of the deposited area on the substrate is difficult to control inasmwch as the film obscures the substrate and prevents any visual registration between the laser source and the substrate.
* Registered Trade Mark l-9-77-044 - 2 -`
... ~.. , . ... ,., .. ,.. ,,, ,~ . .... .. . . .
~5~3~3 1 Accordingly, a need exists in the prior art for a
23 History of the Prlor Art 24 Laser beams have been utilized in various applications as light sources, and as machining devices in connection 26 with metal and/or softer materials. In particular, U. S.
27 Patent No. 4,000,492 describes a laser machining system 28 wherein~a lase~ bearn is utili~ed as a source of pulses of 29 coherent radiation directed to form discrete holés in a ~ metal~material.~
, " ' :
`: ` `
.
::: - ~ - ~ . . .
: ~ , : . ~ :
- ' . :
~L3L~S ~ 3 Other laser systems have been utilized in image recording tech-niques. For example, U. S. Patent No. 4,001,840 describes a digital laser used in recording and reading apparatus.
In addition to these diverse applications of laser technology U. S. Patent No. 3,560,258 to Brisman discloses a technique of deposi-ting materials in patterns by use of laser radiation and IBM* Tech-nical Disclosure Bulletin, Vol. 8, No. 2, July 1965 to Potts et al.
discloses a technique of inducing evaporation of materials for depo-sition, utilizing a 1aser source.
The Potts device, in particular, contemplates a technique for forming interconnection patterns on a substrate by placing opposite the substrate a filrn of evaporizable materials disposed on a glass plate. A laser beam of energy scans the metallic fi1m through the glass plate to selectively evaporate portions of the film which then deposit upon the semiconductor substrate in accordance with the desired pattern. The Brisman technique appears to be useful but it has certain limitations in manufacturing performance. For example, the thickness of the film must be carefully controlled in order to yield a desired thickness on the substrate, and the placement of the film with respect to the substrate is likewise critical. Since the film is not re-useable the method would be relatively expensive. Finally, the location of the deposited area on the substrate is difficult to control inasmwch as the film obscures the substrate and prevents any visual registration between the laser source and the substrate.
* Registered Trade Mark l-9-77-044 - 2 -`
... ~.. , . ... ,., .. ,.. ,,, ,~ . .... .. . . .
~5~3~3 1 Accordingly, a need exists in the prior art for a
2 method of depositing material, selectively, upon a substrate
3 utilizing a laser source in a precise and well defined
4 fashlon.
Summary of the Invention 6 The present invention contemplates a method and apparatus 7 for selectively depositing metal or other materials upon a 8 transparent substrate utilizing a laser source. More parti-9 cularly, the invention contemplates depositing material in highly selective areas with a high degree of adhesion and 11 uniformity.
12 The invention attains these res.ults with an arrangement 13 wherein a laser source is located on one slde of a transparent 14 or translucent substrate upon which metal is to be deposited, so that the laser beam can be directed through the substrate.
16 A reservoir of metal is located on the opposite side of the 17 substrate adjacent to the surface thereof. Deflection means 18 are provided to selectively scan the laser beam at predetermined 19 intensity levels over a desired pattern~
The scanned laser beam acts to heat and vaporize metal .~ ~
21 from the metal reservoir, which is then redeposited upon the 22 adjacent surface of the glass substrate. It has been found 23 that with transparent substrates, metal and particularly 24 conductiv~ metal can be :redeposited upon one surface thereof 25~ using this method with a high degree of adhesion and uniformity.
:26 The method has particular utility with respect ~o the repair 27 of masks utilized in semiconductor fabrication, for example.
~ : FI 9-77-044 : ~3~
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1 Brief Descrlption of the Drawings 2 The drawilly is a schematic illustration of a laser beam 3 arrancJ~d in conjunction with a trans~arent substrate and a 4 meta] reservoir to perEorm metal deposltion.
Detailed Descriptlon of the Inventioll 6 Referring now to the drawing a preferred embodiment of 7 ~he invention is described including a laser device. The 8 laser device includes a source 12, a lens system 14 and 9 deflection means 1~ which are illustrated in schema-tic fashion. These elernents are tended to represent conventional 11 laser components which are con~ercially available. Substrate 12 18 comprises a transparent elemen-t upon which material is to 13 be deposited from a material reservoir 20 also illustrated 14 in the figure. In the preferred embodiment a solid state Nd3 :YAG laser is utilizedr although other laser sources 16 could be u-tilized as well. It is contemplated that -the 17 laser indicated have a wavelencJth in the order of 1.0~
18 microns, and it should be apparent that the laser wavelength 19 would be matched to the transparency wavel~n~th of substrate 1~ illus-tral:ed in the fiyure.
21 In the embodiment illustrated substrate 18 is support:ed 22 along its edges by a suitable Erame 22 an-l metal reservoir 23 20 is supported upon a base 24. In the embodi~ent illustrated 24 the spa~ing between the underside of substrate 18 and the top of reservoir 20 is very small, i.e., in the order of a 26 few thousandths of an inch~ It is possible, in an alternative 27 mode, to support the substrate on the metal reservoir in 28 direct contact therewith~ Means can be provided to adjust FI 9-77-044 ~ ~4~
~ ' . .
] the sp~cin~J between substra~e 1~ and -~he lop of reciervoir 2 20, if desired. The spaciny between the substrate and 3 reservoir is significallt but need not be varied duriny the 4 deposition operations.
Reservoir 20 can be comprised of a slug of any metal 6 suitable for vapor deposition. In particular, it has been 7 found that copper, brass, chrome and aluminum are suitable for laser deposition. In the preferred embodlment lt is g envlsioned that substrate 18 comprise a transparent sub~
strate such as a substrate upon which concluctive metal 11 layers are to be deposited. For example, substrate 18 might 12 comprise a plate glass substrate. It is also possible that substrate 18 could be a transparent or translucent substrate 14 upon which decorative layers oE non-conductive metal are to be deposited, if desired. It should be apparent that the liyh~ absorption characteristics of the given substrate 17 material, as matched to the source frequency of the laser 18 employed constltute the limiting ~actor on the substrate 19 materials and deposition materials which can be utilized.
.
In practice the apparatus described is preferably 21 utilized to form selective deposition of metallic material, 22 such as copper, upon the lower edge of a plate glass substrate 23 by scanning the laser beam, under the control oE deflection 24 means, along a desired preselected pattern. Since the laser is directed through the glass, registration with a desired 26 pattern c~n be quite easily accomplished. The laser deflection 27 means is adjusted to vaporize metal at a suitable rate and ;~
28 the vaporized metal redeposits upon the underside of the 29 substrate, provid~ng good adhesion to the glass substrate and excellent uniformity of thickness.
. ~ .
~ FI 9-77-044 5 .
Summary of the Invention 6 The present invention contemplates a method and apparatus 7 for selectively depositing metal or other materials upon a 8 transparent substrate utilizing a laser source. More parti-9 cularly, the invention contemplates depositing material in highly selective areas with a high degree of adhesion and 11 uniformity.
12 The invention attains these res.ults with an arrangement 13 wherein a laser source is located on one slde of a transparent 14 or translucent substrate upon which metal is to be deposited, so that the laser beam can be directed through the substrate.
16 A reservoir of metal is located on the opposite side of the 17 substrate adjacent to the surface thereof. Deflection means 18 are provided to selectively scan the laser beam at predetermined 19 intensity levels over a desired pattern~
The scanned laser beam acts to heat and vaporize metal .~ ~
21 from the metal reservoir, which is then redeposited upon the 22 adjacent surface of the glass substrate. It has been found 23 that with transparent substrates, metal and particularly 24 conductiv~ metal can be :redeposited upon one surface thereof 25~ using this method with a high degree of adhesion and uniformity.
:26 The method has particular utility with respect ~o the repair 27 of masks utilized in semiconductor fabrication, for example.
~ : FI 9-77-044 : ~3~
.
: :, ,. . : :
- . - .. ~ . . ..
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1 Brief Descrlption of the Drawings 2 The drawilly is a schematic illustration of a laser beam 3 arrancJ~d in conjunction with a trans~arent substrate and a 4 meta] reservoir to perEorm metal deposltion.
Detailed Descriptlon of the Inventioll 6 Referring now to the drawing a preferred embodiment of 7 ~he invention is described including a laser device. The 8 laser device includes a source 12, a lens system 14 and 9 deflection means 1~ which are illustrated in schema-tic fashion. These elernents are tended to represent conventional 11 laser components which are con~ercially available. Substrate 12 18 comprises a transparent elemen-t upon which material is to 13 be deposited from a material reservoir 20 also illustrated 14 in the figure. In the preferred embodiment a solid state Nd3 :YAG laser is utilizedr although other laser sources 16 could be u-tilized as well. It is contemplated that -the 17 laser indicated have a wavelencJth in the order of 1.0~
18 microns, and it should be apparent that the laser wavelength 19 would be matched to the transparency wavel~n~th of substrate 1~ illus-tral:ed in the fiyure.
21 In the embodiment illustrated substrate 18 is support:ed 22 along its edges by a suitable Erame 22 an-l metal reservoir 23 20 is supported upon a base 24. In the embodi~ent illustrated 24 the spa~ing between the underside of substrate 18 and the top of reservoir 20 is very small, i.e., in the order of a 26 few thousandths of an inch~ It is possible, in an alternative 27 mode, to support the substrate on the metal reservoir in 28 direct contact therewith~ Means can be provided to adjust FI 9-77-044 ~ ~4~
~ ' . .
] the sp~cin~J between substra~e 1~ and -~he lop of reciervoir 2 20, if desired. The spaciny between the substrate and 3 reservoir is significallt but need not be varied duriny the 4 deposition operations.
Reservoir 20 can be comprised of a slug of any metal 6 suitable for vapor deposition. In particular, it has been 7 found that copper, brass, chrome and aluminum are suitable for laser deposition. In the preferred embodlment lt is g envlsioned that substrate 18 comprise a transparent sub~
strate such as a substrate upon which concluctive metal 11 layers are to be deposited. For example, substrate 18 might 12 comprise a plate glass substrate. It is also possible that substrate 18 could be a transparent or translucent substrate 14 upon which decorative layers oE non-conductive metal are to be deposited, if desired. It should be apparent that the liyh~ absorption characteristics of the given substrate 17 material, as matched to the source frequency of the laser 18 employed constltute the limiting ~actor on the substrate 19 materials and deposition materials which can be utilized.
.
In practice the apparatus described is preferably 21 utilized to form selective deposition of metallic material, 22 such as copper, upon the lower edge of a plate glass substrate 23 by scanning the laser beam, under the control oE deflection 24 means, along a desired preselected pattern. Since the laser is directed through the glass, registration with a desired 26 pattern c~n be quite easily accomplished. The laser deflection 27 means is adjusted to vaporize metal at a suitable rate and ;~
28 the vaporized metal redeposits upon the underside of the 29 substrate, provid~ng good adhesion to the glass substrate and excellent uniformity of thickness.
. ~ .
~ FI 9-77-044 5 .
5~ 3 1 The parame-ters used in the process depend upon the type 2 of positioning system utilized to orient the laser wi-th 3 respect to the substrate. It should be obvious that an X-Y
4 positloning system for the substrate could be utili~ed as well, if desired. In addition, the type of laser can be
4 positloning system for the substrate could be utili~ed as well, if desired. In addition, the type of laser can be
6 varied dependin~ upon the type o~ metal to be deposited and
7 the transparent substrate material which it is desired to
8 deposit the metal upon.
9 It should also be apparent that materials other than metal could be deposited, if desired. In particular, non-11 metallic materials that are susceptible of vaporization can 12 be processed utilizing the described arranyement.
13 The presen-t arrangement has particular utility for 1~ fabrication of metallic lands upon solic~ substrates and, there~ore~ is susceptible o~ fabricatiny conductors or 16 resistors upon such substrates. In addition, the method 17 described can be utilized in repairing metal masks such as 18 chrome masks deposited upon glass.
19 The method described has advantages over the prior art in that it is extremely a simple way of fabricating rnetal 21 lands having uniform thickness and good adhesi.on. The use 22 of the laser beam through a transparent substrate provides 23 yood reyistration with simple orientation apparatus; and the 24 use of a metal sluy for a metal reservo.ir is preEerable to 25 the use o thin film in that the metal slug can be reused. .
26 Alternatively, the metal can be retained within a crucible 27 and maintained sliyhtly above lts meltiny point whereby 28 depressions are not for~ed in the reservoir surface and the 29 reservoir can be used ~or essentially continuous processin~.
" ~ :
.FI 9-77-044 -6-.
g3 1 The following example discloses a preferred method of 2 practicincJ the inven-tion;
3 Lxample [
4 Using a YAG laser with a wavelength o~ 1.06 microns a layer of copper was deposited upon plate glass. The in-6 strument configuration was similar -to that illustrated in 7 -the drawi.ng wi-th a quarter inch copper slug being oriented 8 adjacent to a 1/16th inch substra-te of plate glass. The 9 laser was utilized at a pulse repetition rate of 3 kilo-hertz, an average power rating of 2 watts, and a scanning 11 speed of ~ millimeters per second. The linewidth o~ de-12 posited material using the above configuration was in the 13 order o~ 10 mils or less and a layer of copper of uniEorm 14 thickness and good adhesion was formed upon the plate glass.
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FIz9-77-0~4 7 .
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13 The presen-t arrangement has particular utility for 1~ fabrication of metallic lands upon solic~ substrates and, there~ore~ is susceptible o~ fabricatiny conductors or 16 resistors upon such substrates. In addition, the method 17 described can be utilized in repairing metal masks such as 18 chrome masks deposited upon glass.
19 The method described has advantages over the prior art in that it is extremely a simple way of fabricating rnetal 21 lands having uniform thickness and good adhesi.on. The use 22 of the laser beam through a transparent substrate provides 23 yood reyistration with simple orientation apparatus; and the 24 use of a metal sluy for a metal reservo.ir is preEerable to 25 the use o thin film in that the metal slug can be reused. .
26 Alternatively, the metal can be retained within a crucible 27 and maintained sliyhtly above lts meltiny point whereby 28 depressions are not for~ed in the reservoir surface and the 29 reservoir can be used ~or essentially continuous processin~.
" ~ :
.FI 9-77-044 -6-.
g3 1 The following example discloses a preferred method of 2 practicincJ the inven-tion;
3 Lxample [
4 Using a YAG laser with a wavelength o~ 1.06 microns a layer of copper was deposited upon plate glass. The in-6 strument configuration was similar -to that illustrated in 7 -the drawi.ng wi-th a quarter inch copper slug being oriented 8 adjacent to a 1/16th inch substra-te of plate glass. The 9 laser was utilized at a pulse repetition rate of 3 kilo-hertz, an average power rating of 2 watts, and a scanning 11 speed of ~ millimeters per second. The linewidth o~ de-12 posited material using the above configuration was in the 13 order o~ 10 mils or less and a layer of copper of uniEorm 14 thickness and good adhesion was formed upon the plate glass.
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Claims (5)
1. A method of selectively depositing material upon a transparent substrate comprising the steps of placing the transparent substrate adjacent to a source of material to be deposited, directing a beam of laser radiation through the trans-parent substrate to a surface of said source of material, and selectively moving the laser beam whereby the material is evaporated and redeposited upon the substrate.
2. The method of claim 1 wherein said material is a con-ductive metal.
3. The method of claim 2 wherein said transparent sub-strate is glass and said metal is copper.
4. The method of claim 1 wherein said laser is scanned across the substrate at a speed of about 2 millimeters per second.
5. The method of claim 4 wherein said laser is powered at a level of about 2 watts, with a pulse repetition rate of about 3 kilohertz.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US86279777A | 1977-12-21 | 1977-12-21 | |
| US862,797 | 1977-12-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1105093A true CA1105093A (en) | 1981-07-14 |
Family
ID=25339379
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA310,046A Expired CA1105093A (en) | 1977-12-21 | 1978-08-25 | Laser deposition of metal upon transparent materials |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP0002738B1 (en) |
| JP (1) | JPS5487684A (en) |
| CA (1) | CA1105093A (en) |
| DE (1) | DE2861042D1 (en) |
| IT (1) | IT1160293B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4737232A (en) * | 1985-01-17 | 1988-04-12 | Jean Flicstein | Process for depositing and crystallizing a thin layer of organic material by means of a beam of energy |
| US6822189B2 (en) | 2001-10-16 | 2004-11-23 | Data Storage Institute | Method of laser marking and apparatus therefor |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56145135A (en) * | 1980-04-13 | 1981-11-11 | Matsushita Electric Ind Co Ltd | Deposition method |
| DE3112460C2 (en) * | 1981-03-28 | 1983-01-20 | Fried. Krupp Gmbh, 4300 Essen | Process for the production of a composite body and application of this process |
| JPS6066896A (en) * | 1983-09-16 | 1985-04-17 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Method of bonding metal copper on substrate |
| EP0140240B1 (en) * | 1983-10-14 | 1988-07-06 | Hitachi, Ltd. | Process for forming an organic thin film |
| JPS6321501A (en) * | 1986-07-15 | 1988-01-29 | Kawasaki Steel Corp | Thickness measurement of coated film |
| US4895735A (en) * | 1988-03-01 | 1990-01-23 | Texas Instruments Incorporated | Radiation induced pattern deposition |
| JPH04104903A (en) * | 1990-08-21 | 1992-04-07 | Kokusai Chodendo Sangyo Gijutsu Kenkyu Center | Production oxide high-temperature superconducting thin film |
| DE4232373A1 (en) * | 1992-09-03 | 1994-03-10 | Deutsche Forsch Luft Raumfahrt | Structural semiconductor layer deposition method - heating applied film using laser beam, to transfer the film material to surface of substrate |
| JPH06104551A (en) * | 1992-09-21 | 1994-04-15 | Miyachi Technos Kk | Production of printed wiring board and method for ptinting wiring on glass plate |
| JPH06299339A (en) * | 1993-04-12 | 1994-10-25 | Tokyo Name Plate Kogyo Kyodo Kumiai | Metal thin film deposition method by laser irradiation |
| DE4330961C1 (en) * | 1993-09-09 | 1994-07-28 | Krone Ag | Producing structured metallised coatings on substrates |
| FI103396B (en) * | 1994-03-24 | 1999-06-30 | Laserplus Oy | Method and apparatus for making marks on a glass surface |
| DE19517625A1 (en) * | 1995-05-13 | 1996-11-14 | Budenheim Rud A Oetker Chemie | Laser printing esp. on glass or plastic substrate |
| US6657802B1 (en) | 1999-04-16 | 2003-12-02 | Infineon Technologies Corporation | Phase assisted synchronization detector |
| WO2003040427A1 (en) * | 2001-10-16 | 2003-05-15 | Data Storage Institute | Thin film deposition by laser irradiation |
| JP4235945B2 (en) * | 2003-08-29 | 2009-03-11 | 独立行政法人理化学研究所 | Metal wiring forming method and metal wiring forming apparatus |
| US7608308B2 (en) * | 2006-04-17 | 2009-10-27 | Imra America, Inc. | P-type semiconductor zinc oxide films process for preparation thereof, and pulsed laser deposition method using transparent substrates |
| CN100436155C (en) * | 2006-08-15 | 2008-11-26 | 北京工业大学 | Laser fast heat sublimation printing method based on transparent material |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE314461B (en) * | 1965-03-01 | 1969-09-08 | Ibm | |
| GB1138084A (en) * | 1966-07-22 | 1968-12-27 | Standard Telephones Cables Ltd | Method of vapour depositing a material in the form of a pattern |
| GB1138556A (en) * | 1966-07-22 | 1969-01-01 | Standard Telephones Cables Ltd | Method of vapour depositing a material in the form of a pattern |
| DE1621306A1 (en) * | 1967-01-17 | 1971-04-29 | Philips Patentverwaltung | Process for vapor deposition of thin layers of the highest purity and arrangement for carrying out the process |
| US3763222A (en) * | 1972-04-11 | 1973-10-02 | Itt | Esters of phenyl indan |
| JPS5242152B2 (en) * | 1973-02-22 | 1977-10-22 | ||
| DE2523982C3 (en) * | 1975-05-30 | 1979-05-17 | Ibm Deutschland Gmbh, 7000 Stuttgart | Process and device for maskless vapor deposition, as well as use of the process |
-
1978
- 1978-08-25 CA CA310,046A patent/CA1105093A/en not_active Expired
- 1978-11-20 JP JP14243178A patent/JPS5487684A/en active Granted
- 1978-12-01 IT IT30412/78A patent/IT1160293B/en active
- 1978-12-15 DE DE7878101690T patent/DE2861042D1/en not_active Expired
- 1978-12-15 EP EP78101690A patent/EP0002738B1/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4737232A (en) * | 1985-01-17 | 1988-04-12 | Jean Flicstein | Process for depositing and crystallizing a thin layer of organic material by means of a beam of energy |
| US6822189B2 (en) | 2001-10-16 | 2004-11-23 | Data Storage Institute | Method of laser marking and apparatus therefor |
Also Published As
| Publication number | Publication date |
|---|---|
| IT7830412A0 (en) | 1978-12-01 |
| IT1160293B (en) | 1987-03-11 |
| JPS5487684A (en) | 1979-07-12 |
| JPS5534225B2 (en) | 1980-09-05 |
| EP0002738A1 (en) | 1979-07-11 |
| EP0002738B1 (en) | 1981-09-02 |
| DE2861042D1 (en) | 1981-11-26 |
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