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CA1024638A - Laser a heterojonction double - Google Patents

Laser a heterojonction double

Info

Publication number
CA1024638A
CA1024638A CA201,452A CA201452A CA1024638A CA 1024638 A CA1024638 A CA 1024638A CA 201452 A CA201452 A CA 201452A CA 1024638 A CA1024638 A CA 1024638A
Authority
CA
Canada
Prior art keywords
double heterostructure
heterostructure laser
laser
double
heterostructure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA201,452A
Other languages
English (en)
Other versions
CA201452S (en
Inventor
Izuo Hayashi
Isamu Sakuma
Yasuo Nannicki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Application granted granted Critical
Publication of CA1024638A publication Critical patent/CA1024638A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
CA201,452A 1973-06-30 1974-06-03 Laser a heterojonction double Expired CA1024638A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP48074234A JPS5818790B2 (ja) 1973-06-30 1973-06-30 二重ヘテロ接合レ−ザ

Publications (1)

Publication Number Publication Date
CA1024638A true CA1024638A (fr) 1978-01-17

Family

ID=13541261

Family Applications (1)

Application Number Title Priority Date Filing Date
CA201,452A Expired CA1024638A (fr) 1973-06-30 1974-06-03 Laser a heterojonction double

Country Status (4)

Country Link
JP (1) JPS5818790B2 (fr)
CA (1) CA1024638A (fr)
DE (1) DE2423486C3 (fr)
GB (1) GB1445207A (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI854000L (fi) * 1985-10-25 1987-04-16 Vsesojuzny Nauchno-Issledovatelsky Instrumentalny Institut Skaerverktyg med en slitbestaendig belaeggning.

Also Published As

Publication number Publication date
JPS5023789A (fr) 1975-03-14
DE2423486C3 (de) 1980-12-18
GB1445207A (en) 1976-08-04
DE2423486B2 (de) 1980-04-17
DE2423486A1 (de) 1975-01-23
JPS5818790B2 (ja) 1983-04-14

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Legal Events

Date Code Title Description
MKEX Expiry

Effective date: 19950117