CA1015867A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- CA1015867A CA1015867A CA197,701A CA197701A CA1015867A CA 1015867 A CA1015867 A CA 1015867A CA 197701 A CA197701 A CA 197701A CA 1015867 A CA1015867 A CA 1015867A
- Authority
- CA
- Canada
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/676—Combinations of only thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
- H10D84/617—Combinations of vertical BJTs and only diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP48043881A JPS49131388A (en) | 1973-04-18 | 1973-04-18 |
Publications (1)
Publication Number | Publication Date |
---|---|
CA1015867A true CA1015867A (en) | 1977-08-16 |
Family
ID=12676034
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA197,701A Expired CA1015867A (en) | 1973-04-18 | 1974-04-17 | Semiconductor device |
Country Status (8)
Country | Link |
---|---|
JP (1) | JPS49131388A (en) |
AT (1) | AT373443B (en) |
CA (1) | CA1015867A (en) |
DE (1) | DE2418560A1 (en) |
FR (1) | FR2226750B1 (en) |
GB (1) | GB1472113A (en) |
IT (1) | IT1009920B (en) |
NL (1) | NL7405294A (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5754969B2 (en) * | 1974-04-04 | 1982-11-20 | ||
JPS5753672B2 (en) * | 1974-04-10 | 1982-11-13 | ||
JPS57658B2 (en) * | 1974-04-16 | 1982-01-07 | ||
JPS5714064B2 (en) * | 1974-04-25 | 1982-03-20 | ||
JPS5718710B2 (en) * | 1974-05-10 | 1982-04-17 | ||
JPS5648983B2 (en) * | 1974-05-10 | 1981-11-19 | ||
DE2705990A1 (en) * | 1977-02-12 | 1978-08-17 | Engl Walter L Prof Dr Rer Nat | Thyristor containing integrated circuit - has opposite conductivity semiconductor zones deposited in thyristor anode zone, short circuited with anode |
DE2706031A1 (en) * | 1977-02-12 | 1978-08-17 | Engl Walter L Prof Dr Rer Nat | Thyristor containing integrated circuit - has annular zone surrounding thyristor forming zones of specified conductivity related to cathode |
US4365208A (en) * | 1980-04-23 | 1982-12-21 | Rca Corporation | Gain-controlled amplifier using a controllable alternating-current resistance |
-
1973
- 1973-04-18 JP JP48043881A patent/JPS49131388A/ja active Pending
-
1974
- 1974-04-17 CA CA197,701A patent/CA1015867A/en not_active Expired
- 1974-04-17 DE DE2418560A patent/DE2418560A1/en not_active Withdrawn
- 1974-04-17 GB GB1680074A patent/GB1472113A/en not_active Expired
- 1974-04-18 AT AT0323074A patent/AT373443B/en not_active IP Right Cessation
- 1974-04-18 FR FR7413549A patent/FR2226750B1/fr not_active Expired
- 1974-04-18 IT IT21611/74A patent/IT1009920B/en active
- 1974-04-18 NL NL7405294A patent/NL7405294A/xx not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
GB1472113A (en) | 1977-05-04 |
NL7405294A (en) | 1974-10-22 |
FR2226750B1 (en) | 1978-03-24 |
IT1009920B (en) | 1976-12-20 |
AT373443B (en) | 1984-01-25 |
ATA323074A (en) | 1983-05-15 |
DE2418560A1 (en) | 1974-11-14 |
FR2226750A1 (en) | 1974-11-15 |
JPS49131388A (en) | 1974-12-17 |
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