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BRPI1009693A2 - dispositivo pré-amplificador com um dispositivo fet (transistor de efeito de campo), conjunto de bobina, dispositivo de rm e método para reduzir a impedância da entrada no dispositivo pré-amplificador - Google Patents

dispositivo pré-amplificador com um dispositivo fet (transistor de efeito de campo), conjunto de bobina, dispositivo de rm e método para reduzir a impedância da entrada no dispositivo pré-amplificador

Info

Publication number
BRPI1009693A2
BRPI1009693A2 BRPI1009693A BRPI1009693A BRPI1009693A2 BR PI1009693 A2 BRPI1009693 A2 BR PI1009693A2 BR PI1009693 A BRPI1009693 A BR PI1009693A BR PI1009693 A BRPI1009693 A BR PI1009693A BR PI1009693 A2 BRPI1009693 A2 BR PI1009693A2
Authority
BR
Brazil
Prior art keywords
preamplifier
fet
field effect
effect transistor
coil assembly
Prior art date
Application number
BRPI1009693A
Other languages
English (en)
Inventor
Reykowski Arne
Original Assignee
Koninl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninl Philips Electronics Nv filed Critical Koninl Philips Electronics Nv
Publication of BRPI1009693A2 publication Critical patent/BRPI1009693A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/083—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers
    • H03F1/086—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers with FET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/10—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of amplifying elements with multiple electrode connections
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Magnetic Resonance Imaging Apparatus (AREA)
  • Amplifiers (AREA)
BRPI1009693A 2009-06-19 2010-05-17 dispositivo pré-amplificador com um dispositivo fet (transistor de efeito de campo), conjunto de bobina, dispositivo de rm e método para reduzir a impedância da entrada no dispositivo pré-amplificador BRPI1009693A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US21849009P 2009-06-19 2009-06-19
PCT/IB2010/052178 WO2010146486A1 (en) 2009-06-19 2010-05-17 Improving input impedance of low noise preamplifiers used for mri

Publications (1)

Publication Number Publication Date
BRPI1009693A2 true BRPI1009693A2 (pt) 2018-04-10

Family

ID=42676863

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI1009693A BRPI1009693A2 (pt) 2009-06-19 2010-05-17 dispositivo pré-amplificador com um dispositivo fet (transistor de efeito de campo), conjunto de bobina, dispositivo de rm e método para reduzir a impedância da entrada no dispositivo pré-amplificador

Country Status (5)

Country Link
US (1) US9124218B2 (pt)
EP (1) EP2443741B1 (pt)
CN (1) CN102804595B (pt)
BR (1) BRPI1009693A2 (pt)
WO (1) WO2010146486A1 (pt)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BRPI1009693A2 (pt) * 2009-06-19 2018-04-10 Koninl Philips Electronics Nv dispositivo pré-amplificador com um dispositivo fet (transistor de efeito de campo), conjunto de bobina, dispositivo de rm e método para reduzir a impedância da entrada no dispositivo pré-amplificador
WO2012160518A1 (en) * 2011-05-23 2012-11-29 Koninklijke Philips Electronics N.V. Fet switch as detune circuit for mri rf coils
US9018955B2 (en) * 2011-06-17 2015-04-28 General Electric Company System and method for receiving magnetic resonance (MR) signals with an FET electrically between preamplifier terminals
WO2013126704A1 (en) * 2012-02-22 2013-08-29 The Trustees Of Columbia University In The City Of New York System, arrangement and method for decoupling rf coils using one or more non-standardly-matched coil elements
CN103536288A (zh) * 2012-07-12 2014-01-29 上海联影医疗科技有限公司 磁共振系统及其射频线圈性能检测方法
US11839447B2 (en) 2018-04-23 2023-12-12 Mr Instruments, Inc. Wearable open and adjustable MRI head coil
WO2021108773A1 (en) 2019-11-26 2021-06-03 Rhieneck Thomas J Conformable mri receiver coil system capable of supporting ultrasound, diagnostic, therapeutic, and interventional implements

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3381238A (en) 1964-06-29 1968-04-30 Tektronix Inc Signal isolation circuit
JPS53101248A (en) * 1977-02-16 1978-09-04 Hitachi Ltd Low-frequency power amplifier
US4075576A (en) * 1977-02-25 1978-02-21 Rockwell International Corporation Sensitive high speed solid state preamp
US4126823A (en) * 1977-12-22 1978-11-21 Dalton Murphy L Jun Magnetic field detection apparatus
US4260949A (en) * 1978-06-12 1981-04-07 Dalton Murphy L Jun Magnetic field detection apparatus
US4435846A (en) * 1982-04-08 1984-03-06 Gte Automatic Electric Incorporated Automatic gain control of a single gate GaAs FET amplifier
US4637073A (en) * 1984-06-25 1987-01-13 Raytheon Company Transmit/receive switch
US4689563A (en) * 1985-06-10 1987-08-25 General Electric Company High-field nuclear magnetic resonance imaging/spectroscopy system
US4694254A (en) * 1985-06-10 1987-09-15 General Electric Company Radio-frequency spectrometer subsystem for a magnetic resonance imaging system
US4839594A (en) * 1987-08-17 1989-06-13 Picker International, Inc. Faraday shield localized coil for magnetic resonance imaging
FR2618620B1 (fr) * 1987-07-24 1989-11-24 Trt Telecom Radio Electr Dispositif interrupteur pour signaux a haute frequence
US4835485A (en) * 1988-03-25 1989-05-30 General Electric Company Unconditionally-stable ultra low noise R.F. preamplifier
US4862002A (en) * 1988-05-31 1989-08-29 Wang Samuel C Multiple channel readout circuit optimized for a cryogenically operated IR sensor head
US5296813A (en) 1992-03-05 1994-03-22 Picker International, Inc. Magnetic resonance scanner with improved packaging for circuitry within the magnetic field
US5545999A (en) 1995-03-21 1996-08-13 General Electric Company Preamplifier circuit for magnetic resonance system
JP3123484B2 (ja) * 1997-10-29 2001-01-09 日本電気株式会社 マイクロ波増幅器
US6323648B1 (en) * 1997-11-26 2001-11-27 Medrad, Inc. Peripheral vascular array
SE514160C2 (sv) * 1999-04-13 2001-01-15 Ericsson Telefon Ab L M Förspänningsarrangemang för fälteffekttransistorer
JP2000299438A (ja) 1999-04-15 2000-10-24 Hitachi Ltd 半導体集積回路
EP1137171A1 (en) * 1999-06-30 2001-09-26 Mitsubishi Denki Kabushiki Kaisha Microwave amplifier
US6870696B2 (en) * 2002-01-07 2005-03-22 International Business Machines Corporation CMOS low-noise MR read head pre-amplifier circuit
US6990030B2 (en) * 2003-10-21 2006-01-24 Hewlett-Packard Development Company, L.P. Magnetic memory having a calibration system
CN101836358B (zh) * 2007-05-31 2013-10-16 皇家飞利浦电子股份有限公司 集成电路低噪声放大器
BRPI1009693A2 (pt) * 2009-06-19 2018-04-10 Koninl Philips Electronics Nv dispositivo pré-amplificador com um dispositivo fet (transistor de efeito de campo), conjunto de bobina, dispositivo de rm e método para reduzir a impedância da entrada no dispositivo pré-amplificador
CN102412786B (zh) * 2011-12-20 2014-06-11 东南大学 一种跨导增强无源混频器

Also Published As

Publication number Publication date
EP2443741A1 (en) 2012-04-25
US20120062233A1 (en) 2012-03-15
CN102804595B (zh) 2015-05-13
CN102804595A (zh) 2012-11-28
WO2010146486A1 (en) 2010-12-23
US9124218B2 (en) 2015-09-01
EP2443741B1 (en) 2015-02-25

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Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]
B25D Requested change of name of applicant approved

Owner name: KONINKLIJKE PHILIPS N.V. (NL)

B25G Requested change of headquarter approved

Owner name: KONINKLIJKE PHILIPS N.V. (NL)

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]