Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
  • H10D84/131—Thyristors having built-in components
  • H10D84/135—Thyristors having built-in components the built-in components being diodes
  • H10D84/136—Thyristors having built-in components the built-in components being diodes in anti-parallel configurations, e.g. reverse current thyristor [RCT]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/26—Bombardment with radiation
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D18/00—Thyristors
  • H10D18/80—Bidirectional devices, e.g. triacs 
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
  • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
  • H10D62/113—Isolations within a component, i.e. internal isolations

Landscapes

• Engineering & Computer Science (AREA)
• Physics & Mathematics (AREA)
• General Physics & Mathematics (AREA)
• Toxicology (AREA)
• High Energy & Nuclear Physics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• Health & Medical Sciences (AREA)
• Manufacturing & Machinery (AREA)
• Computer Hardware Design (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Thyristors (AREA)
• Electrodes Of Semiconductors (AREA)
• Light Receiving Elements (AREA)

Applications Claiming Priority (1)

Publications (1)

Family

ID=6031706

Family Applications (1)

Country Status (5)

Families Citing this family (5)

Family Cites Families (6)

• 1978
  • 1978-02-11 DE DE2805813A patent/DE2805813C3/en not_active Expired
• 1979
  • 1979-02-05 JP JP1150179A patent/JPS54114985A/en active Pending
  • 1979-02-07 SE SE7901087A patent/SE7901087L/en not_active Application Discontinuation
  • 1979-02-09 BR BR7900858A patent/BR7900858A/en unknown
  • 1979-02-12 GB GB7904807A patent/GB2014364B/en not_active Expired

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