BR7310275D0 - IMPROVEMENT IN A MULTIPLE JUNCLE SEMICONDUCTOR DEVICE - Google Patents

IMPROVEMENT IN A MULTIPLE JUNCLE SEMICONDUCTOR DEVICE

Info

Publication number: BR7310275D0
Authority: BR; Brazil
Prior art keywords: juncle; improvement; semiconductor device; semiconductor; multiple juncle
Prior art date: 1972-12-29

Application number

BR10275/73A

Other languages

Portuguese (pt)

Inventor

Yagi Hajime

Tsuyuki Tadaharu

Original Assignee

Sony Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1972-12-29

Filing date

1973-12-28

Publication date

1974-09-24

1973-12-28 Application filed by Sony Corp filed Critical Sony Corp

1974-09-24 Publication of BR7310275D0 publication Critical patent/BR7310275D0/en

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/60—Impurity distributions or concentrations
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/133—Emitter regions of BJTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
- H10D62/148—Cathode regions of thyristors
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
- H10D84/617—Combinations of vertical BJTs and only diodes
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/67—Complementary BJTs
- H10D84/673—Vertical complementary BJTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass

BR10275/73A 1972-12-29 1973-12-28 IMPROVEMENT IN A MULTIPLE JUNCLE SEMICONDUCTOR DEVICE BR7310275D0 (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP48000550A JPS5147583B2 (en)	1972-12-29	1972-12-29

Publications (1)

Publication Number	Publication Date
BR7310275D0 true BR7310275D0 (en)	1974-09-24

Family

ID=11476818

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
BR10275/73A BR7310275D0 (en)	1972-12-29	1973-12-28	IMPROVEMENT IN A MULTIPLE JUNCLE SEMICONDUCTOR DEVICE

Country Status (15)

Country	Link
JP (1)	JPS5147583B2 (en)
AT (1)	AT376844B (en)
BE (1)	BE809216A (en)
BR (1)	BR7310275D0 (en)
CA (1)	CA993568A (en)
CH (1)	CH577750A5 (en)
DE (1)	DE2364752A1 (en)
DK (1)	DK140036C (en)
ES (1)	ES421881A1 (en)
FR (1)	FR2212645B1 (en)
GB (1)	GB1460037A (en)
IT (1)	IT1002384B (en)
NL (1)	NL7317815A (en)
NO (1)	NO140844C (en)
SE (1)	SE398940B (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5914897B2 (en) *	1975-02-08	1984-04-06	ソニー株式会社	semiconductor equipment
AT377645B (en) *	1972-12-29	1985-04-10	Sony Corp	SEMICONDUCTOR COMPONENT
JPS5754969B2 (en) *	1974-04-04	1982-11-20
JPS5753672B2 (en) *	1974-04-10	1982-11-13
JPS57658B2 (en) *	1974-04-16	1982-01-07
JPS5714064B2 (en) *	1974-04-25	1982-03-20
JPS5648983B2 (en) *	1974-05-10	1981-11-19
JPS5718710B2 (en) *	1974-05-10	1982-04-17
JPS5426789Y2 (en) *	1974-07-23	1979-09-03
IT1061510B (en) *	1975-06-30	1983-04-30	Rca Corp	BIPOLAR TRANSISTOR PRESENTING AN EMITTER WITH A HIGH LOW CONCENTRATION OF IMPURITIES AND ITS MANUFACTURING METHOD
JPS52100978A (en) *	1976-02-20	1977-08-24	Nippon Telegr & Teleph Corp <Ntt>	Semiconductor device
JPS5565460A (en) *	1978-11-09	1980-05-16	Ibm	Method of manufacturing semiconductor device improved in current gain
JPS5946103B2 (en) *	1980-03-10	1984-11-10	日本電信電話株式会社	transistor

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
BE547227A (en) *	1955-04-21
US3343048A (en) *	1964-02-20	1967-09-19	Westinghouse Electric Corp	Four layer semiconductor switching devices having a shorted emitter and method of making the same
DE1221363B (en) *	1964-04-25	1966-07-21	Telefunken Patent	Method for reducing the sheet resistance of semiconductor components
DE1297237B (en) *	1964-09-18	1969-06-12	Itt Ind Gmbh Deutsche	Surface transistor and process for its manufacture
US3500141A (en) *	1964-10-13	1970-03-10	Ibm	Transistor structure
GB1160429A (en) *	1965-10-14	1969-08-06	Philco Ford Corp	Improvements in and relating to Semiconductive Devices.
US3469117A (en) *	1966-01-08	1969-09-23	Nippon Telegraph & Telephone	Electric circuit employing semiconductor devices
US3432920A (en) *	1966-12-01	1969-03-18	Rca Corp	Semiconductor devices and methods of making them
US3512056A (en) *	1967-04-25	1970-05-12	Westinghouse Electric Corp	Double epitaxial layer high power,high speed transistor
FR1574577A (en) *	1967-08-03	1969-07-11
US3504242A (en) *	1967-08-11	1970-03-31	Westinghouse Electric Corp	Switching power transistor with thyristor overload capacity
US3538401A (en) *	1968-04-11	1970-11-03	Westinghouse Electric Corp	Drift field thyristor
US3544863A (en) *	1968-10-29	1970-12-01	Motorola Inc	Monolithic integrated circuit substructure with epitaxial decoupling capacitance
US3591430A (en) *	1968-11-14	1971-07-06	Philco Ford Corp	Method for fabricating bipolar planar transistor having reduced minority carrier fringing
JPS4840667B1 (en) *	1969-03-28	1973-12-01
US3717515A (en) *	1969-11-10	1973-02-20	Ibm	Process for fabricating a pedestal transistor
DE2060854A1 (en) *	1970-12-10	1972-08-17	Siemens Ag	Semiconductor component with three zones of alternating conductivity type and arrangement for its control
DE2211384A1 (en) *	1971-03-20	1972-11-30	Philips Nv	Circuit arrangement with at least one radiation-fed circuit element and semiconductor arrangement for use in such a circuit arrangement
JPS493583A (en) *	1972-04-20	1974-01-12

1972
- 1972-12-29 JP JP48000550A patent/JPS5147583B2/ja not_active Expired
1973
- 1973-12-20 GB GB5909373A patent/GB1460037A/en not_active Expired
- 1973-12-21 DK DK701973A patent/DK140036C/en not_active IP Right Cessation
- 1973-12-27 AT AT1083973A patent/AT376844B/en not_active IP Right Cessation
- 1973-12-27 CH CH1814173A patent/CH577750A5/de not_active IP Right Cessation
- 1973-12-27 DE DE2364752A patent/DE2364752A1/en not_active Ceased
- 1973-12-27 IT IT32324/73A patent/IT1002384B/en active
- 1973-12-28 FR FR7347090A patent/FR2212645B1/fr not_active Expired
- 1973-12-28 BR BR10275/73A patent/BR7310275D0/en unknown
- 1973-12-28 SE SE7317518A patent/SE398940B/en unknown
- 1973-12-28 NO NO4980/73A patent/NO140844C/en unknown
- 1973-12-28 NL NL7317815A patent/NL7317815A/xx unknown
- 1973-12-28 BE BE2053325A patent/BE809216A/en not_active IP Right Cessation
- 1973-12-28 ES ES421881A patent/ES421881A1/en not_active Expired
- 1973-12-28 CA CA189,167A patent/CA993568A/en not_active Expired

Also Published As

Publication number	Publication date
NL7317815A (en)	1974-07-02
AU6378973A (en)	1975-06-19
FR2212645B1 (en)	1977-08-05
ATA1083973A (en)	1984-05-15
NO140844B (en)	1979-08-13
DE2364752A1 (en)	1974-08-01
JPS4991191A (en)	1974-08-30
SE398940B (en)	1978-01-23
BE809216A (en)	1974-04-16
FR2212645A1 (en)	1974-07-26
CA993568A (en)	1976-07-20
NO140844C (en)	1979-11-21
CH577750A5 (en)	1976-07-15
IT1002384B (en)	1976-05-20
DK140036B (en)	1979-06-05
JPS5147583B2 (en)	1976-12-15
DK140036C (en)	1979-12-24
GB1460037A (en)	1976-12-31
ES421881A1 (en)	1976-08-01
AT376844B (en)	1985-01-10

Publication	Publication Date	Title
IT981860B (en)	1974-10-10	SEMICONDUCTOR DEVICE
BR6915742D0 (en)	1973-01-02	SEMICONDUCTOR DEVICE
CH507591A (en)	1971-05-15	Semiconductor device
YU259773A (en)	1980-06-30	Semiconductor device in plastic package
CH508280A (en)	1971-05-31	Semiconductor device
IT996680B (en)	1975-12-10	SEMICONDUCTOR DEVICE
CH504108A (en)	1971-02-28	Semiconductor device
IT963820B (en)	1974-01-21	IMPROVEMENTS IN A CONTACT DEVICE
BR7310275D0 (en)	1974-09-24	IMPROVEMENT IN A MULTIPLE JUNCLE SEMICONDUCTOR DEVICE
BR7308693D0 (en)	1974-08-22	SEMICONDUCTOR DEVICE
CH511512A (en)	1971-08-15	Semiconductor device
IT939041B (en)	1973-02-10	SEMICONDUCTOR DEVICE
BR6909999D0 (en)	1973-01-02	SEMICONDUCTOR DEVICE
BR7310282D0 (en)	1974-08-15	IMPROVEMENT IN A MULTIPLE JUNCLE SEMICONDUCTOR DEVICE
IT983646B (en)	1974-11-11	SEMICONDUCTOR PHOTOELECTRIC DEVICE
MY7900031A (en)	1979-12-31	Improvements in or relating to a semiconductor device
IT986562B (en)	1975-01-30	SEMICONDUCTOR DEVICE
IT977703B (en)	1974-09-20	SEMICONDUCTOR DEVICE
IT984672B (en)	1974-11-20	SEMICONDUCTOR MEMORY DEVICE
IT991623B (en)	1975-08-30	PACKAGING DEVICE
IT982699B (en)	1974-10-21	PERFECTED SEMICONDUCTOR MEMORY
CH499204A (en)	1970-11-15	Semiconductor device
CH513515A (en)	1971-09-30	Semiconductor device
IT990812B (en)	1975-07-10	SEMICONDUCTOR DEVICE
IT981160B (en)	1974-10-10	SEMICONDUCTOR SCHOTTKY BARRIER DEVICE