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BE850625A - Procede de revetement de substrats par depot au sein d'un plasma - Google Patents

Procede de revetement de substrats par depot au sein d'un plasma

Info

Publication number
BE850625A
BE850625A BE174274A BE174274A BE850625A BE 850625 A BE850625 A BE 850625A BE 174274 A BE174274 A BE 174274A BE 174274 A BE174274 A BE 174274A BE 850625 A BE850625 A BE 850625A
Authority
BE
Belgium
Prior art keywords
deposit
plasma
coating substrates
substrates
coating
Prior art date
Application number
BE174274A
Other languages
English (en)
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of BE850625A publication Critical patent/BE850625A/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45508—Radial flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/318—Inorganic layers composed of nitrides
    • H01L21/3185—Inorganic layers composed of nitrides of siliconnitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
BE174274A 1976-01-22 1977-01-21 Procede de revetement de substrats par depot au sein d'un plasma BE850625A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/651,556 US4142004A (en) 1976-01-22 1976-01-22 Method of coating semiconductor substrates

Publications (1)

Publication Number Publication Date
BE850625A true BE850625A (fr) 1977-05-16

Family

ID=24613303

Family Applications (1)

Application Number Title Priority Date Filing Date
BE174274A BE850625A (fr) 1976-01-22 1977-01-21 Procede de revetement de substrats par depot au sein d'un plasma

Country Status (3)

Country Link
US (1) US4142004A (fr)
BE (1) BE850625A (fr)
CA (1) CA1073405A (fr)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4273805A (en) * 1978-06-19 1981-06-16 Rca Corporation Passivating composite for a semiconductor device comprising a silicon nitride (Si1 3N4) layer and phosphosilicate glass (PSG) layer
USRE32351E (en) * 1978-06-19 1987-02-17 Rca Corporation Method of manufacturing a passivating composite comprising a silicon nitride (SI1 3N4) layer and a phosphosilicate glass (PSG) layer for a semiconductor device layer
US4668973A (en) * 1978-06-19 1987-05-26 Rca Corporation Semiconductor device passivated with phosphosilicate glass over silicon nitride
US4223048A (en) * 1978-08-07 1980-09-16 Pacific Western Systems Plasma enhanced chemical vapor processing of semiconductive wafers
JPS5845177B2 (ja) * 1979-03-09 1983-10-07 富士通株式会社 半導体表面絶縁膜の形成法
US4237150A (en) * 1979-04-18 1980-12-02 The United States Of America As Represented By The United States Department Of Energy Method of producing hydrogenated amorphous silicon film
US4191385A (en) * 1979-05-15 1980-03-04 Fox Wayne L Vacuum-sealed gas-bearing assembly
EP0067987A4 (fr) * 1979-12-26 1983-04-06 Varian Associates Joint d'etancheite plat sous vide pour l'isolation d'un palier pneumatique.
EP0049032B1 (fr) * 1980-08-21 1986-09-17 National Research Development Corporation Revêtement de matériaux isolants à l'aide d'une décharge luminescente
JPS6010618A (ja) * 1983-06-30 1985-01-19 Canon Inc プラズマｃｖｄ装置
DE3402971A1 (de) * 1984-01-28 1985-08-01 Philips Patentverwaltung Gmbh, 2000 Hamburg Vorrichtung zur beschichtung eines substrates mittels plasma-chemical vapour deposition oder hochfrequenz-kathodenzerstaeubung
JPS61117841A (ja) * 1984-11-14 1986-06-05 Hitachi Ltd シリコン窒化膜の形成方法
US4612207A (en) * 1985-01-14 1986-09-16 Xerox Corporation Apparatus and process for the fabrication of large area thin film multilayers
US4834022A (en) * 1985-11-08 1989-05-30 Focus Semiconductor Systems, Inc. CVD reactor and gas injection system
US4692344A (en) * 1986-02-28 1987-09-08 Rca Corporation Method of forming a dielectric film and semiconductor device including said film
US4976996A (en) * 1987-02-17 1990-12-11 Lam Research Corporation Chemical vapor deposition reactor and method of use thereof
JPS63234548A (ja) * 1987-03-24 1988-09-29 Oki Electric Ind Co Ltd 半導体素子の製造方法
US5354695A (en) 1992-04-08 1994-10-11 Leedy Glenn J Membrane dielectric isolation IC fabrication
US4877651A (en) * 1988-05-31 1989-10-31 Olin Corporation Process for thermally depositing silicon nitride and silicon dioxide films onto a substrate
US4877641A (en) * 1988-05-31 1989-10-31 Olin Corporation Process for plasma depositing silicon nitride and silicon dioxide films onto a substrate
DE3889735T2 (de) * 1988-12-21 1994-09-08 Monkowski Rhine Inc Chemischer dampfniederschlagsreaktor und dessen verwendung.
US4993358A (en) * 1989-07-28 1991-02-19 Watkins-Johnson Company Chemical vapor deposition reactor and method of operation
US6714625B1 (en) * 1992-04-08 2004-03-30 Elm Technology Corporation Lithography device for semiconductor circuit pattern generation
US6500734B2 (en) * 1993-07-30 2002-12-31 Applied Materials, Inc. Gas inlets for wafer processing chamber
JP3632256B2 (ja) * 1994-09-30 2005-03-23 株式会社デンソー 窒化シリコン膜を有する半導体装置の製造方法
US5928427A (en) 1994-12-16 1999-07-27 Hwang; Chul-Ju Apparatus for low pressure chemical vapor deposition
US6399976B1 (en) * 1995-06-06 2002-06-04 International Business Machines Corporation Shrink-wrap collar for DRAM deep trenches
US6551857B2 (en) * 1997-04-04 2003-04-22 Elm Technology Corporation Three dimensional structure integrated circuits
US5915167A (en) * 1997-04-04 1999-06-22 Elm Technology Corporation Three dimensional structure memory
DE19944265C2 (de) * 1999-09-15 2003-07-24 Rational Ag Vorrichtung zur Vergleichmäßigung des Energieeintrags in Gargut
US6592980B1 (en) * 1999-12-07 2003-07-15 Air Products And Chemicals, Inc. Mesoporous films having reduced dielectric constants
US6559007B1 (en) * 2000-04-06 2003-05-06 Micron Technology, Inc. Method for forming flash memory device having a tunnel dielectric comprising nitrided oxide
US6544908B1 (en) 2000-08-30 2003-04-08 Micron Technology, Inc. Ammonia gas passivation on nitride encapsulated devices
US6748994B2 (en) * 2001-04-11 2004-06-15 Avery Dennison Corporation Label applicator, method and label therefor
US6986814B2 (en) * 2001-12-20 2006-01-17 General Electric Company Gas distributor for vapor coating method and container
AU2003255254A1 (en) * 2002-08-08 2004-02-25 Glenn J. Leedy Vertical system integration
DE102005030583B4 (de) * 2005-06-30 2010-09-30 Advanced Micro Devices, Inc., Sunnyvale Verfahren zur Herstellung von Kontaktisolationsschichten und Silizidgebieten mit unterschiedlichen Eigenschaften eines Halbleiterbauelements und Halbleiterbauelement
US7514125B2 (en) * 2006-06-23 2009-04-07 Applied Materials, Inc. Methods to improve the in-film defectivity of PECVD amorphous carbon films
WO2014179093A1 (fr) * 2013-04-30 2014-11-06 Applied Materials, Inc. Chemisage de réglage d'écoulement ayant des passages de gaz répartis dans l'espace
JP6336719B2 (ja) * 2013-07-16 2018-06-06 株式会社ディスコ プラズマエッチング装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1104935A (en) * 1964-05-08 1968-03-06 Standard Telephones Cables Ltd Improvements in or relating to a method of forming a layer of an inorganic compound
US3652324A (en) * 1968-08-15 1972-03-28 Westinghouse Electric Corp A METHOD OF VAPOR DEPOSITING A LAYER OF Si{11 N{11 {0 ON A SILICON BASE
US3637423A (en) * 1969-02-10 1972-01-25 Westinghouse Electric Corp Pyrolytic deposition of silicon nitride films
US3672983A (en) * 1970-01-09 1972-06-27 Ibm Process for making metal contacts to high speed transistors and product formed thereby
US3757733A (en) * 1971-10-27 1973-09-11 Texas Instruments Inc Radial flow reactor
US3961103A (en) * 1972-07-12 1976-06-01 Space Sciences, Inc. Film deposition
US3900944A (en) * 1973-12-19 1975-08-26 Texas Instruments Inc Method of contacting and connecting semiconductor devices in integrated circuits
DE2409910C3 (de) 1974-03-01 1979-03-15 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen einer Halbleiteranordnung

Also Published As

Publication number Publication date
CA1073405A (fr) 1980-03-11
US4142004A (en) 1979-02-27

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