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BE780423A - PROCESS FOR THE MANUFACTURING OF SILICON INTEGRATED CIRCUITS - Google Patents

PROCESS FOR THE MANUFACTURING OF SILICON INTEGRATED CIRCUITS

Info

Publication number
BE780423A
BE780423A BE780423A BE780423A BE780423A BE 780423 A BE780423 A BE 780423A BE 780423 A BE780423 A BE 780423A BE 780423 A BE780423 A BE 780423A BE 780423 A BE780423 A BE 780423A
Authority
BE
Belgium
Prior art keywords
manufacturing
integrated circuits
silicon integrated
silicon
circuits
Prior art date
Application number
BE780423A
Other languages
French (fr)
Inventor
Cadelec
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Publication of BE780423A publication Critical patent/BE780423A/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/221Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities of killers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
BE780423A 1971-03-09 1972-03-09 PROCESS FOR THE MANUFACTURING OF SILICON INTEGRATED CIRCUITS BE780423A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7108025A FR2128164B1 (en) 1971-03-09 1971-03-09

Publications (1)

Publication Number Publication Date
BE780423A true BE780423A (en) 1972-07-03

Family

ID=9073164

Family Applications (1)

Application Number Title Priority Date Filing Date
BE780423A BE780423A (en) 1971-03-09 1972-03-09 PROCESS FOR THE MANUFACTURING OF SILICON INTEGRATED CIRCUITS

Country Status (4)

Country Link
BE (1) BE780423A (en)
FR (1) FR2128164B1 (en)
GB (1) GB1380143A (en)
IT (1) IT952930B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5262336A (en) * 1986-03-21 1993-11-16 Advanced Power Technology, Inc. IGBT process to produce platinum lifetime control
DE69421606T2 (en) * 1994-03-30 2000-05-31 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania Process for the production of bipolar transistors with controlled storage time

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3590471A (en) * 1969-02-04 1971-07-06 Bell Telephone Labor Inc Fabrication of insulated gate field-effect transistors involving ion implantation

Also Published As

Publication number Publication date
FR2128164B1 (en) 1973-11-30
IT952930B (en) 1973-07-30
GB1380143A (en) 1975-01-08
FR2128164A1 (en) 1972-10-20

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