BE760375A - PROCESS FOR MANUFACTURING BY LIQUID PHASE EPITAXY SEMICONDUCTOR JUNCTIONS IN SOLID SOLUTIONS, AND LIGHT DETECTORS AND EMITTERS CONTAINING THESE JUNCTIONS - Google Patents
PROCESS FOR MANUFACTURING BY LIQUID PHASE EPITAXY SEMICONDUCTOR JUNCTIONS IN SOLID SOLUTIONS, AND LIGHT DETECTORS AND EMITTERS CONTAINING THESE JUNCTIONSInfo
- Publication number
- BE760375A BE760375A BE760375A BE760375A BE760375A BE 760375 A BE760375 A BE 760375A BE 760375 A BE760375 A BE 760375A BE 760375 A BE760375 A BE 760375A BE 760375 A BE760375 A BE 760375A
- Authority
- BE
- Belgium
- Prior art keywords
- junctions
- manufacturing
- liquid phase
- phase epitaxy
- light detectors
- Prior art date
Links
- 238000004943 liquid phase epitaxy Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 230000008569 process Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000006104 solid solution Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02417—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02485—Other chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/063—Gp II-IV-VI compounds
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Led Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR6943698A FR2071085A5 (en) | 1969-12-17 | 1969-12-17 |
Publications (1)
Publication Number | Publication Date |
---|---|
BE760375A true BE760375A (en) | 1971-05-17 |
Family
ID=9044715
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE760375A BE760375A (en) | 1969-12-17 | 1970-12-15 | PROCESS FOR MANUFACTURING BY LIQUID PHASE EPITAXY SEMICONDUCTOR JUNCTIONS IN SOLID SOLUTIONS, AND LIGHT DETECTORS AND EMITTERS CONTAINING THESE JUNCTIONS |
Country Status (7)
Country | Link |
---|---|
US (1) | US3718511A (en) |
BE (1) | BE760375A (en) |
DE (1) | DE2062041C3 (en) |
FR (1) | FR2071085A5 (en) |
GB (1) | GB1340671A (en) |
LU (1) | LU62262A1 (en) |
NL (1) | NL7018330A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2485811A1 (en) * | 1980-06-12 | 1981-12-31 | Nishizawa Junichi | PN JUNCTION SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3925147A (en) * | 1971-08-30 | 1975-12-09 | Hughes Aircraft Co | Preparation of monocrystalline lead tin telluride |
US3770565A (en) * | 1972-01-05 | 1973-11-06 | Us Navy | Plastic mounting of epitaxially grown iv-vi compound semiconducting films |
US3902924A (en) * | 1973-08-30 | 1975-09-02 | Honeywell Inc | Growth of mercury cadmium telluride by liquid phase epitaxy and the product thereof |
US4075043A (en) * | 1976-09-01 | 1978-02-21 | Rockwell International Corporation | Liquid phase epitaxy method of growing a junction between two semiconductive materials utilizing an interrupted growth technique |
US4273596A (en) * | 1978-10-03 | 1981-06-16 | The United States Of America As Represented By The Secretary Of The Army | Method of preparing a monolithic intrinsic infrared focal plane charge coupled device imager |
US4315477A (en) * | 1980-03-24 | 1982-02-16 | Rockwell International Corporation | Semi-open liquid phase epitaxial growth system |
US4263065A (en) * | 1980-03-24 | 1981-04-21 | Rockwell International Corporation | Semi-open liquid phase epitaxial growth system |
US4401487A (en) * | 1980-11-14 | 1983-08-30 | Hughes Aircraft Company | Liquid phase epitaxy of mercury cadmium telluride layer |
US4376663A (en) * | 1980-11-18 | 1983-03-15 | The United States Of America As Represented By The Secretary Of The Army | Method for growing an epitaxial layer of CdTe on an epitaxial layer of HgCdTe grown on a CdTe substrate |
US4357620A (en) * | 1980-11-18 | 1982-11-02 | The United States Of America As Represented By The Secretary Of The Army | Liquid-phase epitaxial growth of cdTe on HgCdTe |
DE3722881C2 (en) * | 1987-07-10 | 1995-02-16 | Kernforschungsz Karlsruhe | Switch matrix with optically non-linear, e.g. bistable, elements and methods of making the same |
EP1039291A1 (en) * | 1999-03-26 | 2000-09-27 | Sony International (Europe) GmbH | Optochemical sensor and method for its construction |
EP1953801B1 (en) * | 2002-06-10 | 2010-08-11 | eV Products, Inc. | Radiation detector |
JP7518785B2 (en) * | 2021-03-08 | 2024-07-18 | 株式会社東芝 | Photoelectric conversion element and its manufacturing method |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1295195B (en) * | 1961-12-26 | 1969-05-14 | Minnesota Mining & Mfg | Thermoelectric semiconductor material |
-
1969
- 1969-12-17 FR FR6943698A patent/FR2071085A5/fr not_active Expired
-
1970
- 1970-12-15 GB GB5957170A patent/GB1340671A/en not_active Expired
- 1970-12-15 BE BE760375A patent/BE760375A/en unknown
- 1970-12-15 US US00098262A patent/US3718511A/en not_active Expired - Lifetime
- 1970-12-16 NL NL7018330A patent/NL7018330A/xx unknown
- 1970-12-16 LU LU62262D patent/LU62262A1/xx unknown
- 1970-12-16 DE DE2062041A patent/DE2062041C3/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2485811A1 (en) * | 1980-06-12 | 1981-12-31 | Nishizawa Junichi | PN JUNCTION SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
Also Published As
Publication number | Publication date |
---|---|
FR2071085A5 (en) | 1971-09-17 |
DE2062041B2 (en) | 1979-06-21 |
US3718511A (en) | 1973-02-27 |
NL7018330A (en) | 1971-06-21 |
DE2062041A1 (en) | 1971-06-24 |
DE2062041C3 (en) | 1980-02-21 |
LU62262A1 (en) | 1971-05-14 |
GB1340671A (en) | 1973-12-12 |
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