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BE729668A - - Google Patents

Info

Publication number
BE729668A
BE729668A BE729668DA BE729668A BE 729668 A BE729668 A BE 729668A BE 729668D A BE729668D A BE 729668DA BE 729668 A BE729668 A BE 729668A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE729668A publication Critical patent/BE729668A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
BE729668D 1968-03-11 1969-03-10 BE729668A (xx)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB01844/68A GB1254302A (en) 1968-03-11 1968-03-11 Improvements in insulated gate field effect transistors
GB1184469 1969-02-28

Publications (1)

Publication Number Publication Date
BE729668A true BE729668A (xx) 1969-09-10

Family

ID=26248564

Family Applications (1)

Application Number Title Priority Date Filing Date
BE729668D BE729668A (xx) 1968-03-11 1969-03-10

Country Status (8)

Country Link
US (1) US3586930A (xx)
AT (1) AT320023B (xx)
BE (1) BE729668A (xx)
CH (1) CH508277A (xx)
DE (1) DE1913053C3 (xx)
FR (1) FR2003655B1 (xx)
GB (1) GB1254302A (xx)
NL (1) NL6903513A (xx)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2092803B1 (xx) * 1970-06-19 1974-02-22 Thomson Csf
GB2049273B (en) * 1979-05-02 1983-05-25 Philips Electronic Associated Method for short-circuting igfet source regions to a substrate
JPS5727070A (en) * 1980-07-25 1982-02-13 Toshiba Corp Mos type semiconductor device
US4462041A (en) * 1981-03-20 1984-07-24 Harris Corporation High speed and current gain insulated gate field effect transistors
US4456888A (en) * 1981-03-26 1984-06-26 Raytheon Company Radio frequency network having plural electrically interconnected field effect transistor cells
JPS57197456A (en) * 1981-05-29 1982-12-03 Toshiba Corp Metallic ion detector
GB2154820B (en) * 1984-01-23 1988-05-25 Int Rectifier Corp Photovoltaic relay
JPH04252036A (ja) * 1991-01-10 1992-09-08 Fujitsu Ltd 半導体装置
US5321291A (en) * 1991-12-16 1994-06-14 Texas Instruments Incorporated Power MOSFET transistor
US5258638A (en) * 1992-08-13 1993-11-02 Xerox Corporation Thermal ink jet power MOS device design/layout
JP3322738B2 (ja) * 1993-12-08 2002-09-09 株式会社半導体エネルギー研究所 半導体装置及び集積回路ならびに表示装置
JPH07183345A (ja) * 1993-12-24 1995-07-21 Nec Corp 半導体装置
JPH08213409A (ja) * 1995-02-06 1996-08-20 Nec Corp 半導体装置
US6313512B1 (en) 1999-02-25 2001-11-06 Tyco Electronics Logistics Ag Low source inductance compact FET topology for power amplifiers
GB9922763D0 (en) * 1999-09-28 1999-11-24 Koninkl Philips Electronics Nv Semiconductor devices
US6642578B1 (en) 2002-07-22 2003-11-04 Anadigics, Inc. Linearity radio frequency switch with low control voltage
US8274265B1 (en) 2007-02-28 2012-09-25 Netlogic Microsystems, Inc. Multi-phase power system with redundancy
US7808223B1 (en) * 2007-05-08 2010-10-05 Netlogic Microsystems, Inc. Transistor with spatially integrated schottky diode
GB0709706D0 (en) * 2007-05-21 2007-06-27 Filtronic Compound Semiconduct A field effect transistor
JP2014229737A (ja) * 2013-05-22 2014-12-08 株式会社東芝 半導体装置
JP2016174240A (ja) 2015-03-16 2016-09-29 株式会社東芝 半導体スイッチ
US10615273B2 (en) 2017-06-21 2020-04-07 Cree, Inc. Semiconductor devices having a plurality of unit cell transistors that have smoothed turn-on behavior and improved linearity
US10978583B2 (en) * 2017-06-21 2021-04-13 Cree, Inc. Semiconductor devices having a plurality of unit cell transistors that have smoothed turn-on behavior and improved linearity

Also Published As

Publication number Publication date
DE1913053A1 (de) 1969-12-11
US3586930A (en) 1971-06-22
FR2003655A1 (xx) 1969-11-14
AT320023B (de) 1975-01-27
NL6903513A (xx) 1969-09-15
DE1913053B2 (de) 1979-03-01
GB1254302A (en) 1971-11-17
CH508277A (de) 1971-05-31
DE1913053C3 (de) 1979-10-25
FR2003655B1 (xx) 1973-10-19

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