BE683900A - - Google Patents
Info
- Publication number
- BE683900A BE683900A BE683900DA BE683900A BE 683900 A BE683900 A BE 683900A BE 683900D A BE683900D A BE 683900DA BE 683900 A BE683900 A BE 683900A
- Authority
- BE
- Belgium
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G33/00—Compounds of niobium
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/30—Niobates; Vanadates; Tantalates
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/60—Optical properties, e.g. expressed in CIELAB-values
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/901—Levitation, reduced gravity, microgravity, space
- Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US47115765A | 1965-07-12 | 1965-07-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
BE683900A true BE683900A (zh) | 1966-12-16 |
Family
ID=23870475
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE683900D BE683900A (zh) | 1965-07-12 | 1966-07-08 |
Country Status (6)
Country | Link |
---|---|
US (1) | US3446603A (zh) |
BE (1) | BE683900A (zh) |
DE (1) | DE1544338A1 (zh) |
GB (1) | GB1148080A (zh) |
NL (1) | NL6607871A (zh) |
SE (1) | SE300811B (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3653814A (en) * | 1970-08-03 | 1972-04-04 | Bell Telephone Labor Inc | Technique for the growth of single crystal lead molybdate |
US4001076A (en) * | 1974-12-11 | 1977-01-04 | Gte Laboratories Incorporated | Method for growing thin epitaxial layers of a non-linear, optically active material |
US3998687A (en) * | 1975-03-10 | 1976-12-21 | Bell Telephone Laboratories, Incorporated | Technique for growth of thin film lithium niobate by liquid phase epitaxy |
US4284663A (en) * | 1976-05-10 | 1981-08-18 | Bell Telephone Laboratories, Incorporated | Fabrication of optical waveguides by indiffusion of metals |
US5733805A (en) | 1984-10-05 | 1998-03-31 | Hitachi, Ltd. | Method of fabricating semiconductor device utilizing a GaAs single crystal |
JPH0628234B2 (ja) * | 1984-10-05 | 1994-04-13 | 株式会社日立製作所 | GaAs単結晶および半導体装置 |
US5171400A (en) * | 1989-11-29 | 1992-12-15 | Stanford University | Method of producing crystalline rods having regions of reversed dominant ferroelectric polarity and method for clarifying such a rod |
US6809027B2 (en) * | 2002-06-06 | 2004-10-26 | International Business Machines Corporation | Self-aligned borderless contacts |
DE102004003596B4 (de) * | 2004-01-15 | 2007-06-21 | Forschungsverbund Berlin E.V. | Verfahren zur Herstellung von ZnO-Einkristallen |
KR101935218B1 (ko) | 2016-01-29 | 2019-01-03 | 내셔날 인스티튜트 오브 어드밴스드 인더스트리얼 사이언스 앤드 테크놀로지 | 고체 전해질 재료 및 전고체 리튬 이온 이차 전지 |
CN105624790A (zh) | 2016-03-01 | 2016-06-01 | 南开大学 | 铋镁双掺铌酸锂晶体 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3346344A (en) * | 1965-07-12 | 1967-10-10 | Bell Telephone Labor Inc | Growth of lithium niobate crystals |
-
1965
- 1965-07-12 US US471157A patent/US3446603A/en not_active Expired - Lifetime
-
1966
- 1966-06-07 NL NL6607871A patent/NL6607871A/xx unknown
- 1966-06-23 DE DE19661544338 patent/DE1544338A1/de active Pending
- 1966-07-07 GB GB30534/66A patent/GB1148080A/en not_active Expired
- 1966-07-08 BE BE683900D patent/BE683900A/xx unknown
- 1966-07-11 SE SE9468/66A patent/SE300811B/xx unknown
Also Published As
Publication number | Publication date |
---|---|
GB1148080A (en) | 1969-04-10 |
US3446603A (en) | 1969-05-27 |
SE300811B (zh) | 1968-05-13 |
DE1544338A1 (de) | 1970-02-26 |
NL6607871A (zh) | 1967-01-13 |