BE642103A - - Google Patents
Info
- Publication number
- BE642103A BE642103A BE642103A BE642103A BE642103A BE 642103 A BE642103 A BE 642103A BE 642103 A BE642103 A BE 642103A BE 642103 A BE642103 A BE 642103A BE 642103 A BE642103 A BE 642103A
- Authority
- BE
- Belgium
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/60—Impurity distributions or concentrations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
- H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US249530A US3249831A (en) | 1963-01-04 | 1963-01-04 | Semiconductor controlled rectifiers with a p-n junction having a shallow impurity concentration gradient |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE642103A true BE642103A (es) | 1964-05-04 |
Family
ID=22943874
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE642103A BE642103A (es) | 1963-01-04 | 1964-01-03 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3249831A (es) |
| BE (1) | BE642103A (es) |
| FR (1) | FR1378697A (es) |
| GB (1) | GB1018399A (es) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3324359A (en) * | 1963-09-30 | 1967-06-06 | Gen Electric | Four layer semiconductor switch with the third layer defining a continuous, uninterrupted internal junction |
| US3331000A (en) * | 1963-10-18 | 1967-07-11 | Gen Electric | Gate turn off semiconductor switch having a composite gate region with different impurity concentrations |
| BR6462522D0 (pt) * | 1963-10-28 | 1973-05-15 | Rca Corp | Dispositivos semicondutores e processo de fabrica-los |
| US3389024A (en) * | 1964-05-12 | 1968-06-18 | Licentia Gmbh | Method of forming a semiconductor by diffusion through the use of a cobalt salt |
| GB1030670A (en) * | 1964-12-02 | 1966-05-25 | Standard Telephones Cables Ltd | Semiconductor devices |
| US3341749A (en) * | 1964-08-10 | 1967-09-12 | Ass Elect Ind | Four layer semiconductor devices with improved high voltage characteristics |
| US3354006A (en) * | 1965-03-01 | 1967-11-21 | Texas Instruments Inc | Method of forming a diode by using a mask and diffusion |
| US3642544A (en) * | 1965-08-02 | 1972-02-15 | Ibm | Method of fabricating solid-state devices |
| GB1158585A (en) * | 1965-12-06 | 1969-07-16 | Lucas Industries Ltd | Gate Controlled Switches |
| US3475235A (en) * | 1966-10-05 | 1969-10-28 | Westinghouse Electric Corp | Process for fabricating a semiconductor device |
| GB1209313A (en) * | 1967-04-11 | 1970-10-21 | Lucas Industries Ltd | HIGH VOLTAGE n-p-n TRANSISTORS |
| US3858238A (en) * | 1970-02-07 | 1974-12-31 | Tokyo Shibaura Electric Co | Semiconductor devices containing as impurities as and p or b and the mehtod of manufacturing the same |
| GB1288029A (es) * | 1970-02-07 | 1972-09-06 | ||
| US3879230A (en) * | 1970-02-07 | 1975-04-22 | Tokyo Shibaura Electric Co | Semiconductor device diffusion source containing as impurities AS and P or B |
| DE2104752B2 (de) * | 1971-02-02 | 1975-02-20 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Verfahren zum Herstellen einer Halbleiter-Kapazitätsdiode |
| US3798084A (en) * | 1972-08-11 | 1974-03-19 | Ibm | Simultaneous diffusion processing |
| US3793093A (en) * | 1973-01-12 | 1974-02-19 | Handotai Kenkyu Shinkokai | Method for producing a semiconductor device having a very small deviation in lattice constant |
| DE2506102C3 (de) * | 1975-02-13 | 1982-03-25 | Siemens AG, 1000 Berlin und 8000 München | Halbleitergleichrichter |
| JPS5942989B2 (ja) * | 1977-01-24 | 1984-10-18 | 株式会社日立製作所 | 高耐圧半導体素子およびその製造方法 |
| JPS5624972A (en) * | 1979-08-07 | 1981-03-10 | Mitsubishi Electric Corp | Thyristor |
| IT1214808B (it) * | 1984-12-20 | 1990-01-18 | Ates Componenti Elettron | Tico e semiconduttore processo per la formazione di uno strato sepolto e di una regione di collettore in un dispositivo monoli |
| US7833473B2 (en) * | 2004-07-30 | 2010-11-16 | General Electric Company | Material for storage and production of hydrogen, and related methods and apparatus |
| JP2014236093A (ja) | 2013-05-31 | 2014-12-15 | サンケン電気株式会社 | シリコン系基板、半導体装置、及び、半導体装置の製造方法 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2811653A (en) * | 1953-05-22 | 1957-10-29 | Rca Corp | Semiconductor devices |
| NL185470B (nl) * | 1954-02-27 | Sebim | Inrichting voor drukdetectie en besturing van een veiligheidskleplichaam. | |
| US2936256A (en) * | 1954-06-01 | 1960-05-10 | Gen Electric | Semiconductor devices |
| DE1012696B (de) * | 1954-07-06 | 1957-07-25 | Siemens Ag | Halbleiteruebergang zwischen Zonen verschiedenen Leitungstypus und Verfahren zur Herstellung des UEberganges |
| NL107344C (es) * | 1955-03-23 | |||
| US2806983A (en) * | 1956-06-01 | 1957-09-17 | Gen Electric | Remote base transistor |
| US2862840A (en) * | 1956-09-26 | 1958-12-02 | Gen Electric | Semiconductor devices |
| US2981874A (en) * | 1957-05-31 | 1961-04-25 | Ibm | High speed, high current transistor |
| US2959719A (en) * | 1957-06-29 | 1960-11-08 | Sony Corp | Semiconductor device |
| US3065392A (en) * | 1958-02-07 | 1962-11-20 | Rca Corp | Semiconductor devices |
| NL111773C (es) * | 1958-08-07 | |||
| US3043725A (en) * | 1958-11-06 | 1962-07-10 | Texas Instruments Inc | Photo transistor |
| US3099591A (en) * | 1958-12-15 | 1963-07-30 | Shockley William | Semiconductive device |
| US3025192A (en) * | 1959-01-02 | 1962-03-13 | Norton Co | Silicon carbide crystals and processes and furnaces for making them |
| NL125412C (es) * | 1959-04-15 | |||
| US2993818A (en) * | 1959-04-23 | 1961-07-25 | Texas Instruments Inc | Method for growing semiconductor crystals |
| US3070466A (en) * | 1959-04-30 | 1962-12-25 | Ibm | Diffusion in semiconductor material |
| NL250955A (es) * | 1959-08-05 | |||
| DE1103389B (de) * | 1959-10-14 | 1961-03-30 | Siemens Ag | Schaltanordnung mit einer Vierschichthalbleiteranordnung |
| US3124862A (en) * | 1959-12-14 | 1964-03-17 | Alloy double-diffused semiconductor |
-
1963
- 1963-01-04 US US249530A patent/US3249831A/en not_active Expired - Lifetime
- 1963-12-31 GB GB51278/63A patent/GB1018399A/en not_active Expired
-
1964
- 1964-01-03 BE BE642103A patent/BE642103A/xx unknown
- 1964-01-03 FR FR959249A patent/FR1378697A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1018399A (en) | 1966-01-26 |
| FR1378697A (fr) | 1964-11-13 |
| US3249831A (en) | 1966-05-03 |