BE639315A - - Google Patents
Info
- Publication number
- BE639315A BE639315A BE639315DA BE639315A BE 639315 A BE639315 A BE 639315A BE 639315D A BE639315D A BE 639315DA BE 639315 A BE639315 A BE 639315A
- Authority
- BE
- Belgium
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/20—Breakdown diodes, e.g. avalanche diodes
- H10D8/25—Zener diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Thyristors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB41189/62A GB1028767A (en) | 1962-10-31 | 1962-10-31 | Semi-conductor devices and their manufacture |
GB1142063 | 1963-03-22 | ||
GB1594563 | 1963-04-23 | ||
GB3034263 | 1963-07-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
BE639315A true BE639315A (de) |
Family
ID=27448106
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE639315D BE639315A (de) | 1962-10-31 |
Country Status (3)
Country | Link |
---|---|
US (1) | US3354003A (de) |
BE (1) | BE639315A (de) |
GB (1) | GB1028767A (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3457469A (en) * | 1965-11-15 | 1969-07-22 | Motorola Inc | Noise diode having an alloy zener junction |
DE2358937C3 (de) * | 1973-11-27 | 1976-07-15 | Licentia Gmbh | Thyristor fuer hochspannung im kilovoltbereich |
JPS60250670A (ja) * | 1984-05-25 | 1985-12-11 | Mitsubishi Electric Corp | 半導体装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2419237A (en) * | 1945-01-18 | 1947-04-22 | Bell Telephone Labor Inc | Translating material and device and method of making them |
NL207969A (de) * | 1955-06-28 | |||
US3051877A (en) * | 1955-12-29 | 1962-08-28 | Honeywell Regulator Co | Semiconductor devices |
US2975344A (en) * | 1959-05-28 | 1961-03-14 | Tung Sol Electric Inc | Semiconductor field effect device |
NL249694A (de) * | 1959-12-30 | |||
DE1133038B (de) * | 1960-05-10 | 1962-07-12 | Siemens Ag | Halbleiterbauelement mit einem im wesentlichen einkristallinen Halbleiterkoerper undvier Zonen abwechselnden Leitfaehigkeitstyps |
US3094633A (en) * | 1960-09-29 | 1963-06-18 | Itt | Semiconductor multiplanar rectifying junction diode |
US3203840A (en) * | 1961-12-14 | 1965-08-31 | Texas Insutruments Inc | Diffusion method |
BE636317A (de) * | 1962-08-23 | 1900-01-01 |
-
0
- BE BE639315D patent/BE639315A/xx unknown
-
1962
- 1962-10-31 GB GB41189/62A patent/GB1028767A/en not_active Expired
-
1963
- 1963-10-14 US US315843A patent/US3354003A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE1439954B2 (de) | 1976-01-22 |
DE1439954A1 (de) | 1970-08-20 |
GB1028767A (en) | 1966-05-11 |
US3354003A (en) | 1967-11-21 |