[go: up one dir, main page]

BE584466A - Dispositif traducteur à semi conducteur. - Google Patents

Dispositif traducteur à semi conducteur.

Info

Publication number
BE584466A
BE584466A BE584466A BE584466A BE584466A BE 584466 A BE584466 A BE 584466A BE 584466 A BE584466 A BE 584466A BE 584466 A BE584466 A BE 584466A BE 584466 A BE584466 A BE 584466A
Authority
BE
Belgium
Prior art keywords
translator device
semiconductor
semiconductor translator
translator
Prior art date
Application number
BE584466A
Other languages
English (en)
Inventor
Henry Asaph Stone Jr
Raymond Myrl Warner Jr
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of BE584466A publication Critical patent/BE584466A/fr

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00Bipolar junction transistors [BJT]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/80FETs having rectifying junction gate electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/645Combinations of only lateral BJTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/86Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of Schottky-barrier gate FETs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Weting (AREA)
  • Bipolar Transistors (AREA)
BE584466A 1958-12-11 1959-11-09 Dispositif traducteur à semi conducteur. BE584466A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US779593A US3061739A (en) 1958-12-11 1958-12-11 Multiple channel field effect semiconductor

Publications (1)

Publication Number Publication Date
BE584466A true BE584466A (fr) 1960-03-01

Family

ID=25116917

Family Applications (1)

Application Number Title Priority Date Filing Date
BE584466A BE584466A (fr) 1958-12-11 1959-11-09 Dispositif traducteur à semi conducteur.

Country Status (8)

Country Link
US (1) US3061739A (fr)
BE (1) BE584466A (fr)
CH (1) CH397868A (fr)
DE (1) DE1152185B (fr)
ES (1) ES253851A1 (fr)
FR (1) FR1242628A (fr)
GB (1) GB941368A (fr)
NL (1) NL245195A (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3210696A (en) * 1961-02-10 1965-10-05 Westinghouse Electric Corp Bridged-t filter
US3187606A (en) * 1961-06-05 1965-06-08 Burroughs Corp Fabricating tool and technique
US3192398A (en) * 1961-07-31 1965-06-29 Merck & Co Inc Composite semiconductor delay line device
US3122655A (en) * 1961-12-27 1964-02-25 James J Murray Solid state reactive phase lagging device
US3255360A (en) * 1962-03-30 1966-06-07 Research Corp Field-effect negative resistor
US3163916A (en) * 1962-06-22 1965-01-05 Int Rectifier Corp Unijunction transistor device
BE638316A (fr) * 1962-10-15
NL299821A (fr) * 1962-10-31 1900-01-01
US3173102A (en) * 1962-12-06 1965-03-09 Jr Walter Loewenstern Solid state multiple stream travelling wave amplifier
NL301882A (fr) * 1962-12-17
US3149765A (en) * 1963-05-28 1964-09-22 Western Electric Co Apparatus for removing waffrs from semiconductor slices
US3169837A (en) * 1963-07-31 1965-02-16 Int Rectifier Corp Method of dicing semiconductor wafers
US3292129A (en) * 1963-10-07 1966-12-13 Grace W R & Co Silicon thermistors
US3343114A (en) * 1963-12-30 1967-09-19 Texas Instruments Inc Temperature transducer
US3340490A (en) * 1965-10-21 1967-09-05 Texas Instruments Inc Thermistor
US4364021A (en) * 1977-10-07 1982-12-14 General Electric Company Low voltage varistor configuration

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE490958A (fr) * 1948-09-24
BE495936A (fr) * 1949-10-11
US2842723A (en) * 1952-04-15 1958-07-08 Licentia Gmbh Controllable asymmetric electrical conductor systems
US2717342A (en) * 1952-10-28 1955-09-06 Bell Telephone Labor Inc Semiconductor translating devices
US2816228A (en) * 1953-05-21 1957-12-10 Rca Corp Semiconductor phase shift oscillator and device
DE1039646B (de) * 1953-10-19 1958-09-25 Siemens Ag Verfahren zur Herstellung einer Halbleiteranordnung mit mehreren UEbergaengen zwischen Zonen unterschiedlichen Leitungstyps
BE552928A (fr) * 1957-03-18

Also Published As

Publication number Publication date
US3061739A (en) 1962-10-30
CH397868A (fr) 1965-08-31
NL245195A (fr)
ES253851A1 (es) 1960-03-01
FR1242628A (fr) 1960-09-30
GB941368A (en) 1963-11-13
DE1152185B (de) 1963-08-01

Similar Documents

Publication Publication Date Title
BE580578A (fr) Diode semi-conductrice.
DK104185C (da) Halvlederapparat.
BE583432A (fr) Appareil condensateur à semiconducteur.
FR1212682A (fr) Dispositif semi-conducteur à transistors
BE584466A (fr) Dispositif traducteur à semi conducteur.
CH428008A (fr) Dispositif semi-conducteur
FR1243032A (fr) Dispositif semi-conducteur tel que transistor à jonction
CH384080A (de) Halbleiteranordnung
FR1225032A (fr) Dispositif semi-conducteur
FR1238050A (fr) Dispositif semiconducteur
BE605338A (fr) Dispositif à semi-conducteur.
BE614767A (fr) Dispositif à semi-conducteurs.
FR1224541A (fr) Perfectionnement au dispositif semi-conducteur
FR1229784A (fr) Dispositif semi-conducteur
FR1245603A (fr) Dispositif semi-conducteur
FR1204732A (fr) Dispositif à semi-conducteur
FR1281943A (fr) Dispositif à semi-conducteur
BE602321A (fr) Dispositif à semi-conducteurs.
FR1228364A (fr) Dispositif semi-conducteur
FR1374321A (fr) Dispositif à semi-conducteurs
FR1378015A (fr) Dispositif à semi-conducteur
BE586071A (fr) Dispositif semi-conducteur.
BE575694A (fr) Dispositif semi-conducteur.
FR1249860A (fr) Dispositif semi conducteur p-n. p-n
FR1230268A (fr) Diodes à semi-conducteur