BE524376A - - Google Patents
Info
- Publication number
- BE524376A BE524376A BE524376DA BE524376A BE 524376 A BE524376 A BE 524376A BE 524376D A BE524376D A BE 524376DA BE 524376 A BE524376 A BE 524376A
- Authority
- BE
- Belgium
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US321262A US2705767A (en) | 1952-11-18 | 1952-11-18 | P-n junction transistor |
US439319A US2717343A (en) | 1952-11-18 | 1954-06-25 | P-n junction transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
BE524376A true BE524376A (sv) |
Family
ID=26982893
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE524376D BE524376A (sv) | 1952-11-18 |
Country Status (5)
Country | Link |
---|---|
US (1) | US2717343A (sv) |
BE (1) | BE524376A (sv) |
FR (1) | FR1094039A (sv) |
GB (1) | GB779146A (sv) |
NL (1) | NL93573C (sv) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2870345A (en) * | 1954-02-02 | 1959-01-20 | Philips Corp | Amplification control of a transistor |
NL207969A (sv) * | 1955-06-28 | |||
NL110588C (sv) * | 1955-03-10 | |||
BE547274A (sv) * | 1955-06-20 | |||
US2894184A (en) * | 1955-06-29 | 1959-07-07 | Hughes Aircraft Co | Electrical characteristics of diodes |
US3091701A (en) * | 1956-03-26 | 1963-05-28 | Raytheon Co | High frequency response transistors |
US2988677A (en) * | 1959-05-01 | 1961-06-13 | Ibm | Negative resistance semiconductor device structure |
US3309568A (en) * | 1964-01-02 | 1967-03-14 | Ford Motor Co | Means including a saturable capacitor for reducing electrical energy dissipation in an electrical switching element |
DE1803883A1 (de) * | 1968-10-18 | 1970-05-27 | Siemens Ag | Durch mindestens zwei abstimmbare Kapazitaetsdioden gesteuerte elektrische Anordnung |
US4427457A (en) | 1981-04-07 | 1984-01-24 | Oregon Graduate Center | Method of making depthwise-oriented integrated circuit capacitors |
-
0
- BE BE524376D patent/BE524376A/xx unknown
- NL NL93573D patent/NL93573C/xx active
-
1953
- 1953-11-17 GB GB31883/53A patent/GB779146A/en not_active Expired
- 1953-11-18 FR FR1094039D patent/FR1094039A/fr not_active Expired
-
1954
- 1954-06-25 US US439319A patent/US2717343A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
FR1094039A (fr) | 1955-05-11 |
GB779146A (en) | 1957-07-17 |
US2717343A (en) | 1955-09-06 |
NL93573C (sv) |