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BE524376A - - Google Patents

Info

Publication number
BE524376A
BE524376A BE524376DA BE524376A BE 524376 A BE524376 A BE 524376A BE 524376D A BE524376D A BE 524376DA BE 524376 A BE524376 A BE 524376A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE524376A publication Critical patent/BE524376A/xx
Priority claimed from US321262A external-priority patent/US2705767A/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/20Electrodes characterised by their shapes, relative sizes or dispositions 
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00Bipolar junction transistors [BJT]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
BE524376D 1952-11-18 BE524376A (sv)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US321262A US2705767A (en) 1952-11-18 1952-11-18 P-n junction transistor
US439319A US2717343A (en) 1952-11-18 1954-06-25 P-n junction transistor

Publications (1)

Publication Number Publication Date
BE524376A true BE524376A (sv)

Family

ID=26982893

Family Applications (1)

Application Number Title Priority Date Filing Date
BE524376D BE524376A (sv) 1952-11-18

Country Status (5)

Country Link
US (1) US2717343A (sv)
BE (1) BE524376A (sv)
FR (1) FR1094039A (sv)
GB (1) GB779146A (sv)
NL (1) NL93573C (sv)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2870345A (en) * 1954-02-02 1959-01-20 Philips Corp Amplification control of a transistor
NL207969A (sv) * 1955-06-28
NL110588C (sv) * 1955-03-10
BE547274A (sv) * 1955-06-20
US2894184A (en) * 1955-06-29 1959-07-07 Hughes Aircraft Co Electrical characteristics of diodes
US3091701A (en) * 1956-03-26 1963-05-28 Raytheon Co High frequency response transistors
US2988677A (en) * 1959-05-01 1961-06-13 Ibm Negative resistance semiconductor device structure
US3309568A (en) * 1964-01-02 1967-03-14 Ford Motor Co Means including a saturable capacitor for reducing electrical energy dissipation in an electrical switching element
DE1803883A1 (de) * 1968-10-18 1970-05-27 Siemens Ag Durch mindestens zwei abstimmbare Kapazitaetsdioden gesteuerte elektrische Anordnung
US4427457A (en) 1981-04-07 1984-01-24 Oregon Graduate Center Method of making depthwise-oriented integrated circuit capacitors

Also Published As

Publication number Publication date
FR1094039A (fr) 1955-05-11
GB779146A (en) 1957-07-17
US2717343A (en) 1955-09-06
NL93573C (sv)

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