AU8119601A - Plating method and apparatus that creates a differential between additive disposed on a top surface and a cavity surface of a workpiece using an external influence - Google Patents
Plating method and apparatus that creates a differential between additive disposed on a top surface and a cavity surface of a workpiece using an external influenceInfo
- Publication number
- AU8119601A AU8119601A AU8119601A AU8119601A AU8119601A AU 8119601 A AU8119601 A AU 8119601A AU 8119601 A AU8119601 A AU 8119601A AU 8119601 A AU8119601 A AU 8119601A AU 8119601 A AU8119601 A AU 8119601A
- Authority
- AU
- Australia
- Prior art keywords
- workpiece
- creates
- differential
- plating method
- external influence
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000654 additive Substances 0.000 title 1
- 230000000996 additive effect Effects 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 238000007747 plating Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/22—Electroplating combined with mechanical treatment during the deposition
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/34—Pretreatment of metallic surfaces to be electroplated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Electrochemistry (AREA)
- Mechanical Engineering (AREA)
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Chemically Coating (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US22473900P | 2000-08-10 | 2000-08-10 | |
US09/740,701 US6534116B2 (en) | 2000-08-10 | 2000-12-18 | Plating method and apparatus that creates a differential between additive disposed on a top surface and a cavity surface of a workpiece using an external influence |
US09/919,788 US6858121B2 (en) | 2000-08-10 | 2001-07-31 | Method and apparatus for filling low aspect ratio cavities with conductive material at high rate |
PCT/US2001/024890 WO2002015245A2 (en) | 2000-08-10 | 2001-08-09 | Plating method and apparatus that creates a differential between additive disposed on a top surface and a cavity surface of a workpiece using an external influence |
Publications (1)
Publication Number | Publication Date |
---|---|
AU8119601A true AU8119601A (en) | 2002-02-25 |
Family
ID=46204222
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU8119601A Pending AU8119601A (en) | 2000-08-10 | 2001-08-09 | Plating method and apparatus that creates a differential between additive disposed on a top surface and a cavity surface of a workpiece using an external influence |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP1307905A2 (en) |
JP (1) | JP2004521186A (en) |
KR (1) | KR20030040394A (en) |
CN (1) | CN1310289C (en) |
AU (1) | AU8119601A (en) |
TW (1) | TW520407B (en) |
WO (1) | WO2002015245A2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101687462B1 (en) * | 2012-02-24 | 2016-12-16 | 제이에프이 스틸 가부시키가이샤 | Metal material, and surface treatment method and device |
CN110453258B (en) * | 2019-06-13 | 2021-10-26 | 佛山市顺德区巴田塑料实业有限公司 | Method for producing electroplated lamp cap |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1075515A (en) * | 1992-02-20 | 1993-08-25 | 海阳县刺绣厂 | Hollow carving embroidery process |
JP3191759B2 (en) * | 1998-02-20 | 2001-07-23 | 日本電気株式会社 | Method for manufacturing semiconductor device |
EP1063696B1 (en) * | 1999-06-22 | 2007-08-22 | Interuniversitair Micro-Elektronica Centrum Vzw | A method for improving the quality of a metal-containing layer deposited from a plating bath |
JP3594894B2 (en) * | 2000-02-01 | 2004-12-02 | 新光電気工業株式会社 | Via filling plating method |
-
2001
- 2001-08-09 AU AU8119601A patent/AU8119601A/en active Pending
- 2001-08-09 KR KR10-2003-7001967A patent/KR20030040394A/en not_active Application Discontinuation
- 2001-08-09 EP EP01959666A patent/EP1307905A2/en not_active Withdrawn
- 2001-08-09 CN CNB018155499A patent/CN1310289C/en not_active Expired - Fee Related
- 2001-08-09 JP JP2002520283A patent/JP2004521186A/en active Pending
- 2001-08-09 WO PCT/US2001/024890 patent/WO2002015245A2/en not_active Application Discontinuation
- 2001-08-10 TW TW090119667A patent/TW520407B/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TW520407B (en) | 2003-02-11 |
CN1310289C (en) | 2007-04-11 |
EP1307905A2 (en) | 2003-05-07 |
KR20030040394A (en) | 2003-05-22 |
WO2002015245A2 (en) | 2002-02-21 |
WO2002015245A3 (en) | 2002-07-04 |
JP2004521186A (en) | 2004-07-15 |
CN1559081A (en) | 2004-12-29 |
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