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AU8110187A - Method for growing silicon dendritic-web crystal from deep melts - Google Patents

Method for growing silicon dendritic-web crystal from deep melts

Info

Publication number
AU8110187A
AU8110187A AU81101/87A AU8110187A AU8110187A AU 8110187 A AU8110187 A AU 8110187A AU 81101/87 A AU81101/87 A AU 81101/87A AU 8110187 A AU8110187 A AU 8110187A AU 8110187 A AU8110187 A AU 8110187A
Authority
AU
Australia
Prior art keywords
melts
deep
growing silicon
web crystal
silicon dendritic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU81101/87A
Inventor
Donovan Leigh Barrett
Richard Noel Thomas
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of AU8110187A publication Critical patent/AU8110187A/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AU81101/87A 1986-12-09 1987-11-11 Method for growing silicon dendritic-web crystal from deep melts Abandoned AU8110187A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US93983786A 1986-12-09 1986-12-09
US939837 1986-12-09

Publications (1)

Publication Number Publication Date
AU8110187A true AU8110187A (en) 1988-06-09

Family

ID=25473822

Family Applications (1)

Application Number Title Priority Date Filing Date
AU81101/87A Abandoned AU8110187A (en) 1986-12-09 1987-11-11 Method for growing silicon dendritic-web crystal from deep melts

Country Status (5)

Country Link
JP (1) JPS63185887A (en)
KR (1) KR960006261B1 (en)
AU (1) AU8110187A (en)
GB (1) GB2198966A (en)
IT (1) IT1220053B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3598634B2 (en) * 1996-01-30 2004-12-08 信越半導体株式会社 Method for producing silicon single crystal
US6402839B1 (en) 1998-08-14 2002-06-11 Ebara Solar, Inc. System for stabilizing dendritic web crystal growth
US6454852B2 (en) 1999-07-14 2002-09-24 Seh America, Inc. High efficiency silicon wafer optimized for advanced semiconductor devices
US6632277B2 (en) 1999-07-14 2003-10-14 Seh America, Inc. Optimized silicon wafer gettering for advanced semiconductor devices
US6395085B2 (en) 1999-07-14 2002-05-28 Seh America, Inc. Purity silicon wafer for use in advanced semiconductor devices
US6228165B1 (en) 1999-07-28 2001-05-08 Seh America, Inc. Method of manufacturing crystal of silicon using an electric potential
US6482261B2 (en) * 2000-12-29 2002-11-19 Ebara Solar, Inc. Magnetic field furnace

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5777094A (en) * 1980-10-28 1982-05-14 Nippon Telegr & Teleph Corp <Ntt> Manufacture of platelike crystal
JPS5815099A (en) * 1981-07-14 1983-01-28 Nippon Denso Co Ltd Growing device for ribbon crystal
JPS5850951A (en) * 1981-09-22 1983-03-25 セイコーエプソン株式会社 Bracket for orthodontia
IN161924B (en) * 1984-10-29 1988-02-27 Westinghouse Electric Corp

Also Published As

Publication number Publication date
IT1220053B (en) 1990-06-06
KR960006261B1 (en) 1996-05-13
IT8741733A0 (en) 1987-12-02
JPS63185887A (en) 1988-08-01
KR880008466A (en) 1988-08-31
GB8725963D0 (en) 1987-12-09
GB2198966A (en) 1988-06-29

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