AU6964591A - Process for producing an aluminum oxide layer on various substrates - Google Patents
Process for producing an aluminum oxide layer on various substratesInfo
- Publication number
- AU6964591A AU6964591A AU69645/91A AU6964591A AU6964591A AU 6964591 A AU6964591 A AU 6964591A AU 69645/91 A AU69645/91 A AU 69645/91A AU 6964591 A AU6964591 A AU 6964591A AU 6964591 A AU6964591 A AU 6964591A
- Authority
- AU
- Australia
- Prior art keywords
- producing
- oxide layer
- aluminum oxide
- various substrates
- substrates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H10P14/69391—
-
- H10P14/6302—
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US43293189A | 1989-11-07 | 1989-11-07 | |
| US432931 | 1989-11-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU6964591A true AU6964591A (en) | 1991-05-31 |
Family
ID=23718150
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU69645/91A Abandoned AU6964591A (en) | 1989-11-07 | 1990-11-06 | Process for producing an aluminum oxide layer on various substrates |
Country Status (2)
| Country | Link |
|---|---|
| AU (1) | AU6964591A (en) |
| WO (1) | WO1991006976A2 (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060086977A1 (en) | 2004-10-25 | 2006-04-27 | Uday Shah | Nonplanar device with thinned lower body portion and method of fabrication |
| US7518196B2 (en) | 2005-02-23 | 2009-04-14 | Intel Corporation | Field effect transistor with narrow bandgap source and drain regions and method of fabrication |
| US7485503B2 (en) | 2005-11-30 | 2009-02-03 | Intel Corporation | Dielectric interface for group III-V semiconductor device |
| US8183556B2 (en) | 2005-12-15 | 2012-05-22 | Intel Corporation | Extreme high mobility CMOS logic |
| US8143646B2 (en) | 2006-08-02 | 2012-03-27 | Intel Corporation | Stacking fault and twin blocking barrier for integrating III-V on Si |
| US7851780B2 (en) | 2006-08-02 | 2010-12-14 | Intel Corporation | Semiconductor buffer architecture for III-V devices on silicon substrates |
| US8362566B2 (en) | 2008-06-23 | 2013-01-29 | Intel Corporation | Stress in trigate devices using complimentary gate fill materials |
| CN118201467B (en) * | 2024-05-20 | 2024-07-23 | 北京量子信息科学研究院 | Preparation method of quantum signal conversion device based on semiconductor film |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4216036A (en) * | 1978-08-28 | 1980-08-05 | Bell Telephone Laboratories, Incorporated | Self-terminating thermal oxidation of Al-containing group III-V compound layers |
| US4291327A (en) * | 1978-08-28 | 1981-09-22 | Bell Telephone Laboratories, Incorporated | MOS Devices |
-
1990
- 1990-11-06 AU AU69645/91A patent/AU6964591A/en not_active Abandoned
- 1990-11-06 WO PCT/US1990/006391 patent/WO1991006976A2/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO1991006976A2 (en) | 1991-05-16 |
| WO1991006976A3 (en) | 1991-08-08 |
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