AU673233B2 - Foldback current limiting of a telephone line switch - Google Patents
Foldback current limiting of a telephone line switch Download PDFInfo
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- AU673233B2 AU673233B2 AU59206/94A AU5920694A AU673233B2 AU 673233 B2 AU673233 B2 AU 673233B2 AU 59206/94 A AU59206/94 A AU 59206/94A AU 5920694 A AU5920694 A AU 5920694A AU 673233 B2 AU673233 B2 AU 673233B2
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- current
- line
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- line switch
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- 239000004065 semiconductor Substances 0.000 claims description 13
- 230000005540 biological transmission Effects 0.000 claims description 10
- 230000005669 field effect Effects 0.000 claims description 4
- 230000001419 dependent effect Effects 0.000 description 5
- 229920006395 saturated elastomer Polymers 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
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Description
P100/011 2835/91 Regulation 3.2
AUSTRALIA
Patents Act 1990
ORIGINAL
COMPLETE SPECIFICATION STANDARD PATENT Invention Title: "FOLDBACK CURRENT LIMITING OF A TELEPHONE LINE SWITCH" The following statement is a full description of this invention, including the best method of performing it known to us:- Background This invention relates to the protection of telephones from faults causing excessive current and power dissipation.
When the handset of a telephone is lifted, a line switch inside the telephone closes and allows current from the exchange to flow through the telephone. Modern telephones, especially hands-free telephones, often use a semiconductor (such as a bipolar or field effect transistor) to provide the switching of the current. With normal exchange battery voltages and feed impedances, the semiconductor switch remains saturated when closed and very little power is dissipated in the switch. During abnormal conditions such as an exchange ring trip failure or earth fault, an excessive level of current may flow through the telephone and damage the components of the telephone. If a S semiconductor switch is used, the overload can be detected and the semiconductor switch can be used to limit the current to a predetermined level.
A problem with this arrangement is that the semiconductor line switch will come out of saturation and a significant voltage drop appears across the semiconductor line switch. Although the current has been limited to a safe level, the power dissipated by the line switch is the product of this current and the voltage drop across the line switch. The power level can easily exceed the rating of the semiconductor line switch and cause a failure of the semiconductor line switch.
Summary of the Invention This specification describes a telephone subset having a first 3 semiconductor line switch and a control circuit to control the operation of the line switch, the control circuit including current sensing means to sense the line current and voltage sensing means to provide a measure of the voltage across the line switch, the control means acting to ensure that the combination of the line current and the voltage across the line switch remains within a permitted range.
The invention overcomes this situation by foldback current limiting. The circuit is arranged such that the current limit is not fixed, but is dependent on the voltage across the line switch. As the overload condition increases the voltage drop across the line switch increases but the current through the line switch will initially limit and then decrease. With this arrangement, not only is the current limited but the power dissipation is also limited. Correct selection of the values in the circuit ensure that the line switch remains within its published safe operating area.
15 The component values selected to limit the current and power dissipation must ensure that the worst case exchange feed load line cuts the DC characteristic of the phone at one point only. Otherwise a latchup condition may result and the phone will not reliably seize the exchange line.
Although the line switch current may drop to zero during a large overload, a non-linear protection device (such as a varistor) may 'ie required to protect the line switch from voltage overloads which exceed the Vceo of the line switch.
Brief Descriotion of the Drawinas 4 Figure 1 shows a first line switch without current limiting.
Figure 2 shows the first line switch with normal current limiting.
Figure 3 shows the first line switch with foldback current limiting.
Figure 4 shows a second line switch without current limiting, Figure 5 shows the second line switch with normal current limiting.
Figure 6 shows the second line switch with foldback current limiting.
Figure 7 shows a current versus voltage relationship for a semiconductor line switch Description of the Invention Figures 1 and 4 show line switches using a bipolar transistor and a field effect transistor respectively.
Figure 1 shows a configuration where TR1 switches the line current to the phone transmission circuit. The bridge rectifier between the switch and line is not shown. TR3 is turned on by the dialler (not shown) when the phone goes on line. TR3 then switches TR2 on and TR2 turns on TR1. R3 and R4 provide a path for leakage currents to avoid spurious operation of TR1 and TR2. R2 limits the base current of TR2. With this configuration, the current flowing through TR1 during an overload condition (eg. a surge on the line) is not limited.
Figure 2 shows the addition of R6, R5 and TR4 to provide a current limit for TR1. R6 is a small value resistor which senses the current flowing through TR1. When the current flowing through TR1 reaches the current limit, the voltage across R6 turns on TR4.
When TR4 turns on it robs TR2 of base current. TR2 then provides less drive to TR1, causing TR1 to reduce the line current.
The current limit is set by the value of R6 and the of TR4. The current limit virtually is independent of the voltage across the line. R5 limits the base current of TR4.
Figure 3 shows the addition of R7 to provide a foldback current limit. R7 provides extra base current to TR4. This base current is dependent on the line voltage. The higher the line voltage the greater the base current of TR4. The S effect of this is that the current limit threshold is now dependent on the line voltage as well as R6 and the Vb, of TR4. As the line voltage increases, the current limit is reduced.
In normal operation TR1 is saturated and has a voltage drop VCE of about R6 is a small resistor whose voltage drop is proportional to the line current through TR1. The phone transmission circuit has voltage limiting means (eg. a zener in parallel with the transmission circuit) which limit the voltage across transmission circuit, VT, to eg. 12V.
During an overload condition where the line voltage may rise to eg. 7C V, TR1 comes out of saturation due to the current limiting and most of the line voltage VL appears across the line switch, as VS.
Thus: VS VL VT VR6 Under overload conditions both TR4 and TR3 are switched on so that most of VL appears across R7.
Thus the voltage across R7 is an indication of the voltage across TR1 under overload conditions.
While R7 is shown as connected to the collector of TR3, it could equally be connected to the line on the other side of TR3, i.e. the emitter of TR3.
However, connecting R7 to the collector of TR3 saves leakage current through R7 when TR3 is OFF, i.e. the phone is off line.
Figure 4 shows a line switch using a field effect transistor (FET). A FET has the advantage of an insignificant drive current requirement.
Figure 4 shows a basic line switch without current limiting. When the phone goes on line, the dialler turns on TR3. TR3 causes the gate-source voltage of TR5 to increase which turns on TR5. Line current flows through and into the phone transmission circuit.
Figure 5 shows the addition of TR4, R5 and R6 to provide a current limit for TR5. R6 is a small value resister which senses the current flowing through TR1. When the current flowing through TR1 reaches the current limit, the 15 voltage across R6 trns on TR4. When TR4 turns on it reduces the gatesource voltage of TR5, causing TR5 to reduce the line current. The current limit Sis set by the value of R6 and the Vb, of TR4. The current limit is independent of the voltage across the line.
S* Figure 6 shows the addition of R7 to provide a foldback current limit. R7 provides extra base current for TR4. This base current is dependent on the line voltage. The higher the line voltage, the greater the base current of TR4. The effect of this is that the current limit threshold is now dependent on the line voltage as well as R63 and the Vb,, of TR4. As the line voltage increases, the
O'
current limit is reduced.
The graph of Figure 7 shows the relationship of voltage across a line switch versus current. The curved lines are lines of constant power. The "Standard Current Limit" can be seen to limit the transistor current (to approximately 145 mA in this example) but does not limit the power dissipation.
In excess of 10 watts would be dissipated with line surges of 100 volts or oooo more.
The "Foldback Current Limit" maintains the current below 150mA as well S as ensuring the power dissipation is below 5 watts. The "Saturated" line is the normal mode of operation for the line switch when on line, ie, less than 1 volt across the transistor for all currents up to 150 mA. In this mode the power dissipation is less than 1/4 of a watt.
Claims (9)
1. A telephone subset having a first semiconductor line switch and a control circuit to control the operation of the line switch, the control circuit including current sensing means to sense the line current and voltage sensing means to provide a measure of the voltage across the line switch, wherein the control means includes a first transistor responsive to an ON LINE signal to svitch on and to cause a second transistor to switch on and to turn on the line switch, a third transistor controlled by the current sensing means to reduce the current through the second transistor when the line current reaches a threshold current, the reduction in current through the second transistor causing the line switch to come out of saturation and limit the line current and wherein the voltage sensing means provides additional control current for the third transistor when the voltage across the phone line exceeds a voltage threshold. :ii:
2. A subset as claimed in claim 1, wherein the current sensing means S 15 comprises a low value resistor in series with the line switch and connected between the emitter and base of the third transistor.
3. A subset as claimed in claim 1 or claim 2, wherein the voltage sensing means comprises a high value resistor connected between the base of the third 0 transistor and the remote side of the transmission circuit.
4. A subset as claimed in any one of claims 1 to 3, wherein the line switch is a bipolar transistor, wherein the first and third transistors are connected in series across the series connection of the line switch and transmission circuit, wherein the base of the second transistor is connected between the first and third transistors, and wherein the emitter collector path of the second transistor 9 bridges the collector base path of the liner switch.
A subset as claimed in claim 1, wherein the line switch is a field effect transistor wherein the control means includes a first bipolar transistor in series with a third bipolar transistor across the series connection of the line switch and transmission circuit, wherein the current sensing means is a low value resistor connected across the emitter and base of the third bipolar transistor, wherein the voltage sensing means is a high value resistor connecting the base of the third transistor to the remote side of the transmission circuit.
6. A subset as claimed in claim 1 or claim 5, wherein the high value resistor is connected to the remote side of the transmission circuit via the first transistor.
7. A method of protecting a telephone subset having a semiconductor line switch, the method including: sensing the line current; 15 sensing the voltage across the line switch; a producing a control signal from a combination of the results 3f sensing the line current and sensing the voltage across the line switch; using the control signal to confine the operation of the line switch to within a permitted range.
8. A telephone subset protection arrangement substantially as herein described with reference to Figs. 3 and 6 of the accompanying drawings.
9. A method of protecting a telephone circuit substantially as herein described with reference to Figs. 3 and 6 of the accompanying drawings. DATED THIS FIFTH DAY OF SEPTEMBER 1996 ALCATEL AUSTRALIA LIMITED g' A~Uj ABSTRACT A telephone having a semiconductor line switch TR1 is nrotected from excess line voltage or current by the use of current foldback techniques. A current sensing resistor R12 in series with the line switch piovides a measure of the line current and this operates a bypass transistor TR4 which reduces the drive current for the line switch TR1 causing it to come out of saturation and begin to block line current. A voltage sensing resistor R9 provides a measure of the voltage across TR1 and this further increases the bypass current through TR4. This ensures that the voltage and current applied to TR1 remain within permitted limits. FIGURE 3. oo a a a
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU59206/94A AU673233B2 (en) | 1993-04-08 | 1994-03-31 | Foldback current limiting of a telephone line switch |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AUPL8235 | 1993-04-08 | ||
AUPL823593 | 1993-04-08 | ||
AU59206/94A AU673233B2 (en) | 1993-04-08 | 1994-03-31 | Foldback current limiting of a telephone line switch |
Publications (2)
Publication Number | Publication Date |
---|---|
AU5920694A AU5920694A (en) | 1994-10-13 |
AU673233B2 true AU673233B2 (en) | 1996-10-31 |
Family
ID=25632276
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU59206/94A Expired - Fee Related AU673233B2 (en) | 1993-04-08 | 1994-03-31 | Foldback current limiting of a telephone line switch |
Country Status (1)
Country | Link |
---|---|
AU (1) | AU673233B2 (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4914542A (en) * | 1988-12-27 | 1990-04-03 | Westinghouse Electric Corp. | Current limited remote power controller |
US5041940A (en) * | 1988-12-27 | 1991-08-20 | Vanner, Inc. | Power transistor control circuit particularly for switching incandescent lamps |
-
1994
- 1994-03-31 AU AU59206/94A patent/AU673233B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4914542A (en) * | 1988-12-27 | 1990-04-03 | Westinghouse Electric Corp. | Current limited remote power controller |
US5041940A (en) * | 1988-12-27 | 1991-08-20 | Vanner, Inc. | Power transistor control circuit particularly for switching incandescent lamps |
Also Published As
Publication number | Publication date |
---|---|
AU5920694A (en) | 1994-10-13 |
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