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AU463429B2 - Field effect transistor ina semiconductor body - Google Patents

Field effect transistor ina semiconductor body

Info

Publication number
AU463429B2
AU463429B2 AU43561/72A AU4356172A AU463429B2 AU 463429 B2 AU463429 B2 AU 463429B2 AU 43561/72 A AU43561/72 A AU 43561/72A AU 4356172 A AU4356172 A AU 4356172A AU 463429 B2 AU463429 B2 AU 463429B2
Authority
AU
Australia
Prior art keywords
field effect
effect transistor
semiconductor body
ina semiconductor
transistor ina
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
AU43561/72A
Other versions
AU4356172A (en
Inventor
Joshi Vishnuprakash
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Publication of AU4356172A publication Critical patent/AU4356172A/en
Application granted granted Critical
Publication of AU463429B2 publication Critical patent/AU463429B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
AU43561/72A 1971-07-05 1972-06-19 Field effect transistor ina semiconductor body Expired AU463429B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DEDE8213325 1971-07-05
DE19712133258 DE2133258A1 (en) 1971-07-05 1971-07-05 FIELD EFFECT TRANSISTOR FROM A SEMICONDUCTOR BODY

Publications (2)

Publication Number Publication Date
AU4356172A AU4356172A (en) 1974-01-03
AU463429B2 true AU463429B2 (en) 1975-07-24

Family

ID=5812651

Family Applications (1)

Application Number Title Priority Date Filing Date
AU43561/72A Expired AU463429B2 (en) 1971-07-05 1972-06-19 Field effect transistor ina semiconductor body

Country Status (2)

Country Link
AU (1) AU463429B2 (en)
DE (1) DE2133258A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3650186T2 (en) * 1985-01-30 1995-05-24 Toshiba Kawasaki Kk Semiconductor device and method for its production.

Also Published As

Publication number Publication date
AU4356172A (en) 1974-01-03
DE2133258A1 (en) 1973-01-25

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