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AU3818997A - Single-electron floating-gate mos memory - Google Patents

Single-electron floating-gate mos memory

Info

Publication number
AU3818997A
AU3818997A AU38189/97A AU3818997A AU3818997A AU 3818997 A AU3818997 A AU 3818997A AU 38189/97 A AU38189/97 A AU 38189/97A AU 3818997 A AU3818997 A AU 3818997A AU 3818997 A AU3818997 A AU 3818997A
Authority
AU
Australia
Prior art keywords
gate mos
mos memory
floating
electron
electron floating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU38189/97A
Inventor
Stephen Y. Chou
Lingjie Guo
Effendi Leobandung
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Minnesota System
Original Assignee
University of Minnesota Twin Cities
University of Minnesota System
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Minnesota Twin Cities, University of Minnesota System filed Critical University of Minnesota Twin Cities
Publication of AU3818997A publication Critical patent/AU3818997A/en
Abandoned legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/014—Manufacture or treatment of FETs having zero-dimensional [0D] or one-dimensional [1D] channels, e.g. quantum wire FETs, single-electron transistors [SET] or Coulomb blockade transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/688—Floating-gate IGFETs programmed by two single electrons

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Non-Volatile Memory (AREA)
AU38189/97A 1997-07-25 1997-07-25 Single-electron floating-gate mos memory Abandoned AU3818997A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US1997/013348 WO1999005724A1 (en) 1997-07-25 1997-07-25 Single-electron floating-gate mos memory

Publications (1)

Publication Number Publication Date
AU3818997A true AU3818997A (en) 1999-02-16

Family

ID=22261359

Family Applications (1)

Application Number Title Priority Date Filing Date
AU38189/97A Abandoned AU3818997A (en) 1997-07-25 1997-07-25 Single-electron floating-gate mos memory

Country Status (2)

Country Link
AU (1) AU3818997A (en)
WO (1) WO1999005724A1 (en)

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2797349B1 (en) * 1999-08-04 2002-03-08 X Ion COMPONENT WITH MONO-ELECTRON ELEMENTS AND QUANTUM DEVICE, AS WELL AS INDUSTRIAL PRODUCTION METHOD AND MULTI-CHAMBER IMPLEMENTATION REACTOR
KR100343210B1 (en) * 1999-08-11 2002-07-10 윤종용 MNOS series memory using single electron transistor and fabrication method thereof
US6873087B1 (en) 1999-10-29 2005-03-29 Board Of Regents, The University Of Texas System High precision orientation alignment and gap control stages for imprint lithography processes
US7432634B2 (en) 2000-10-27 2008-10-07 Board Of Regents, University Of Texas System Remote center compliant flexure device
KR100360496B1 (en) * 2000-04-15 2002-11-13 삼성전자 주식회사 Double value single electron memory using multi-quantum dot and driving method thereof
AU2001273491A1 (en) 2000-07-16 2002-02-05 Board Of Regents, The University Of Texas System High-resolution overlay alignment methods and systems for imprint lithography
EP2270592B1 (en) 2000-07-17 2015-09-02 Board of Regents, The University of Texas System Method of forming a pattern on a substrate
US6954275B2 (en) 2000-08-01 2005-10-11 Boards Of Regents, The University Of Texas System Methods for high-precision gap and orientation sensing between a transparent template and substrate for imprint lithography
WO2002067055A2 (en) 2000-10-12 2002-08-29 Board Of Regents, The University Of Texas System Template for room temperature, low pressure micro- and nano-imprint lithography
US6964793B2 (en) 2002-05-16 2005-11-15 Board Of Regents, The University Of Texas System Method for fabricating nanoscale patterns in light curable compositions using an electric field
US7037639B2 (en) 2002-05-01 2006-05-02 Molecular Imprints, Inc. Methods of manufacturing a lithography template
US7179079B2 (en) 2002-07-08 2007-02-20 Molecular Imprints, Inc. Conforming template for patterning liquids disposed on substrates
US6926929B2 (en) 2002-07-09 2005-08-09 Molecular Imprints, Inc. System and method for dispensing liquids
US6908861B2 (en) 2002-07-11 2005-06-21 Molecular Imprints, Inc. Method for imprint lithography using an electric field
US7442336B2 (en) 2003-08-21 2008-10-28 Molecular Imprints, Inc. Capillary imprinting technique
US7019819B2 (en) 2002-11-13 2006-03-28 Molecular Imprints, Inc. Chucking system for modulating shapes of substrates
US7027156B2 (en) 2002-08-01 2006-04-11 Molecular Imprints, Inc. Scatterometry alignment for imprint lithography
US7070405B2 (en) 2002-08-01 2006-07-04 Molecular Imprints, Inc. Alignment systems for imprint lithography
US7641840B2 (en) 2002-11-13 2010-01-05 Molecular Imprints, Inc. Method for expelling gas positioned between a substrate and a mold
US7365103B2 (en) 2002-12-12 2008-04-29 Board Of Regents, The University Of Texas System Compositions for dark-field polymerization and method of using the same for imprint lithography processes
US6871558B2 (en) 2002-12-12 2005-03-29 Molecular Imprints, Inc. Method for determining characteristics of substrate employing fluid geometries
MY136129A (en) 2002-12-13 2008-08-29 Molecular Imprints Inc Magnification correction employing out-of-plane distortion of a substrate
US7179396B2 (en) 2003-03-25 2007-02-20 Molecular Imprints, Inc. Positive tone bi-layer imprint lithography method
US7186656B2 (en) 2004-05-21 2007-03-06 Molecular Imprints, Inc. Method of forming a recessed structure employing a reverse tone process
US7122079B2 (en) 2004-02-27 2006-10-17 Molecular Imprints, Inc. Composition for an etching mask comprising a silicon-containing material
US7396475B2 (en) 2003-04-25 2008-07-08 Molecular Imprints, Inc. Method of forming stepped structures employing imprint lithography
US6951173B1 (en) 2003-05-14 2005-10-04 Molecular Imprints, Inc. Assembly and method for transferring imprint lithography templates
US7307118B2 (en) 2004-11-24 2007-12-11 Molecular Imprints, Inc. Composition to reduce adhesion between a conformable region and a mold
US7157036B2 (en) 2003-06-17 2007-01-02 Molecular Imprints, Inc Method to reduce adhesion between a conformable region and a pattern of a mold
US7150622B2 (en) 2003-07-09 2006-12-19 Molecular Imprints, Inc. Systems for magnification and distortion correction for imprint lithography processes
US7136150B2 (en) 2003-09-25 2006-11-14 Molecular Imprints, Inc. Imprint lithography template having opaque alignment marks
US7090716B2 (en) 2003-10-02 2006-08-15 Molecular Imprints, Inc. Single phase fluid imprint lithography method
US7261830B2 (en) 2003-10-16 2007-08-28 Molecular Imprints, Inc. Applying imprinting material to substrates employing electromagnetic fields
US7122482B2 (en) 2003-10-27 2006-10-17 Molecular Imprints, Inc. Methods for fabricating patterned features utilizing imprint lithography
US7019835B2 (en) 2004-02-19 2006-03-28 Molecular Imprints, Inc. Method and system to measure characteristics of a film disposed on a substrate
US7140861B2 (en) 2004-04-27 2006-11-28 Molecular Imprints, Inc. Compliant hard template for UV imprinting
US7307697B2 (en) 2004-05-28 2007-12-11 Board Of Regents, The University Of Texas System Adaptive shape substrate support system
US7309225B2 (en) 2004-08-13 2007-12-18 Molecular Imprints, Inc. Moat system for an imprint lithography template
US7105452B2 (en) 2004-08-13 2006-09-12 Molecular Imprints, Inc. Method of planarizing a semiconductor substrate with an etching chemistry
US7282550B2 (en) 2004-08-16 2007-10-16 Molecular Imprints, Inc. Composition to provide a layer with uniform etch characteristics
US7041604B2 (en) 2004-09-21 2006-05-09 Molecular Imprints, Inc. Method of patterning surfaces while providing greater control of recess anisotropy
US7252777B2 (en) 2004-09-21 2007-08-07 Molecular Imprints, Inc. Method of forming an in-situ recessed structure
US7547504B2 (en) 2004-09-21 2009-06-16 Molecular Imprints, Inc. Pattern reversal employing thick residual layers
US7241395B2 (en) 2004-09-21 2007-07-10 Molecular Imprints, Inc. Reverse tone patterning on surfaces having planarity perturbations
US7205244B2 (en) 2004-09-21 2007-04-17 Molecular Imprints Patterning substrates employing multi-film layers defining etch-differential interfaces
US7244386B2 (en) 2004-09-27 2007-07-17 Molecular Imprints, Inc. Method of compensating for a volumetric shrinkage of a material disposed upon a substrate to form a substantially planar structure therefrom
US7630067B2 (en) 2004-11-30 2009-12-08 Molecular Imprints, Inc. Interferometric analysis method for the manufacture of nano-scale devices
US7292326B2 (en) 2004-11-30 2007-11-06 Molecular Imprints, Inc. Interferometric analysis for the manufacture of nano-scale devices
US7357876B2 (en) 2004-12-01 2008-04-15 Molecular Imprints, Inc. Eliminating printability of sub-resolution defects in imprint lithography
US7636999B2 (en) 2005-01-31 2009-12-29 Molecular Imprints, Inc. Method of retaining a substrate to a wafer chuck
US7635263B2 (en) 2005-01-31 2009-12-22 Molecular Imprints, Inc. Chucking system comprising an array of fluid chambers
US7256131B2 (en) 2005-07-19 2007-08-14 Molecular Imprints, Inc. Method of controlling the critical dimension of structures formed on a substrate
US8850980B2 (en) 2006-04-03 2014-10-07 Canon Nanotechnologies, Inc. Tessellated patterns in imprint lithography
US7547398B2 (en) 2006-04-18 2009-06-16 Molecular Imprints, Inc. Self-aligned process for fabricating imprint templates containing variously etched features
US20080237684A1 (en) * 2007-03-26 2008-10-02 Michael Specht Method of manufacturing a nanowire transistor, a nanowire transistor structure, a nanowire transistor field

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4272774A (en) * 1979-07-19 1981-06-09 National Semiconductor Corporation Self-aligned floating gate memory cell and method of manufacture
JP3318384B2 (en) * 1993-02-05 2002-08-26 株式会社半導体エネルギー研究所 Thin film transistor and manufacturing method thereof
US5493140A (en) * 1993-07-05 1996-02-20 Sharp Kabushiki Kaisha Nonvolatile memory cell and method of producing the same
US5508543A (en) * 1994-04-29 1996-04-16 International Business Machines Corporation Low voltage memory
US5446299A (en) * 1994-04-29 1995-08-29 International Business Machines Corporation Semiconductor random access memory cell on silicon-on-insulator with dual control gates

Also Published As

Publication number Publication date
WO1999005724A1 (en) 1999-02-04

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase