AU3618997A - Process and device for producing stable endohedral fullerenes of structure z@cx, in which x is greater than or equal to 60 - Google Patents
Process and device for producing stable endohedral fullerenes of structure z@cx, in which x is greater than or equal to 60Info
- Publication number
- AU3618997A AU3618997A AU36189/97A AU3618997A AU3618997A AU 3618997 A AU3618997 A AU 3618997A AU 36189/97 A AU36189/97 A AU 36189/97A AU 3618997 A AU3618997 A AU 3618997A AU 3618997 A AU3618997 A AU 3618997A
- Authority
- AU
- Australia
- Prior art keywords
- fullerenes
- produced
- particles
- accelerated
- producing stable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical class C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 title abstract 9
- 229910003472 fullerene Inorganic materials 0.000 title abstract 9
- 238000000034 method Methods 0.000 title abstract 2
- 239000002245 particle Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
- 238000001816 cooling Methods 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052752 metalloid Inorganic materials 0.000 abstract 1
- 150000002738 metalloids Chemical class 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 229910052755 nonmetal Inorganic materials 0.000 abstract 1
- 150000002843 nonmetals Chemical class 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
- 238000001947 vapour-phase growth Methods 0.000 abstract 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/152—Fullerenes
- C01B32/156—After-treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/211—Fullerenes, e.g. C60
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Composite Materials (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Carbon And Carbon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
A process is disclosed for producing stable endohedral fullerenes of structure Z@Cx, in which x >/= 60. A Z-atom is implanted in the fullerenes and both fullerenes and low energy accelerated Z-particles are produced at the same time and interact with each other in a vacuum vessel. The fullerenes are then withdrawn from the vacuum vessel, dissolved in a solvent and dried. Atoms of non-metals and metalloids are used as Z-atoms. The fullerenes are produced by vapour phase deposition of Cx on a substrate and and the accelerated Z-particles are produced by an ion source and directed onto the growing fullerene layer on the substrate. Alternatively, the fullerenes are produced by evaporating Cx in a furnace through which flows a gas mixture which contains the material to be implanted and the accelerated Z-particles are produced by a high-voltage gas discharge in the same furnace. The disclosed device for producing endohedral fullerenes by means of a high-voltage gas discharge has a cathode which is provided with cooling means and/or has an enlarged surface.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19627337 | 1996-06-28 | ||
DE19627337 | 1996-06-28 | ||
PCT/DE1997/001399 WO1998000363A1 (en) | 1996-06-28 | 1997-06-27 | PROCESS AND DEVICE FOR PRODUCING STABLE ENDOHEDRAL FULLERENES OF STRUCTURE Z@Cx, IN WHICH x ≥ 60 |
Publications (1)
Publication Number | Publication Date |
---|---|
AU3618997A true AU3618997A (en) | 1998-01-21 |
Family
ID=7799152
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU36189/97A Abandoned AU3618997A (en) | 1996-06-28 | 1997-06-27 | Process and device for producing stable endohedral fullerenes of structure z@cx, in which x is greater than or equal to 60 |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0958241B1 (en) |
AT (1) | ATE201658T1 (en) |
AU (1) | AU3618997A (en) |
DE (3) | DE59703700D1 (en) |
WO (1) | WO1998000363A1 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10058243C2 (en) * | 2000-11-19 | 2002-10-10 | Hahn Meitner Inst Berlin Gmbh | Method and arrangement for processing quantum mechanical information units |
DE10122750B4 (en) * | 2001-05-10 | 2008-04-10 | Diehl Stiftung & Co.Kg | Process for the preparation of carbon allotropes and their intercalates or endohedral compounds |
JP2005001970A (en) * | 2003-06-16 | 2005-01-06 | Sony Corp | Nitrogen-containing carbon material and its manufacturing method |
JP2005053904A (en) * | 2003-07-24 | 2005-03-03 | Ideal Star Inc | Fullerene and anticancer therapeutic agent |
CN100453457C (en) * | 2007-02-08 | 2009-01-21 | 厦门大学 | Production of doped aggregate cluster |
KR20120069607A (en) * | 2009-04-14 | 2012-06-28 | 버키‘오’준 에이피에스 | Endohydral fullerenes containing one or more ozone molecules and their use as shock absorbers |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5300203A (en) * | 1991-11-27 | 1994-04-05 | William Marsh Rice University | Process for making fullerenes by the laser evaporation of carbon |
JP3544237B2 (en) * | 1995-02-09 | 2004-07-21 | 独立行政法人 科学技術振興機構 | Production method of giant fullerene |
-
1997
- 1997-06-27 EP EP97932730A patent/EP0958241B1/en not_active Expired - Lifetime
- 1997-06-27 AU AU36189/97A patent/AU3618997A/en not_active Abandoned
- 1997-06-27 WO PCT/DE1997/001399 patent/WO1998000363A1/en active IP Right Grant
- 1997-06-27 AT AT97932730T patent/ATE201658T1/en not_active IP Right Cessation
- 1997-06-27 DE DE59703700T patent/DE59703700D1/en not_active Expired - Fee Related
- 1997-06-27 DE DE19728321A patent/DE19728321A1/en not_active Withdrawn
- 1997-06-27 DE DE19780628T patent/DE19780628D2/en not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
DE19780628D2 (en) | 1999-06-17 |
ATE201658T1 (en) | 2001-06-15 |
DE59703700D1 (en) | 2001-07-05 |
EP0958241A1 (en) | 1999-11-24 |
EP0958241B1 (en) | 2001-05-30 |
WO1998000363A1 (en) | 1998-01-08 |
DE19728321A1 (en) | 1998-01-02 |
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