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AU2795699A - Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth through masks, and gallium nitride semiconductor structures fabricated thereby - Google Patents

Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth through masks, and gallium nitride semiconductor structures fabricated thereby

Info

Publication number
AU2795699A
AU2795699A AU27956/99A AU2795699A AU2795699A AU 2795699 A AU2795699 A AU 2795699A AU 27956/99 A AU27956/99 A AU 27956/99A AU 2795699 A AU2795699 A AU 2795699A AU 2795699 A AU2795699 A AU 2795699A
Authority
AU
Australia
Prior art keywords
nitride semiconductor
gallium nitride
masks
methods
lateral overgrowth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU27956/99A
Inventor
Michael D. Bremser
Robert F Davis
Ok-Hyun Nam
Tsvetanka Zheleva
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
North Carolina State University
Original Assignee
North Carolina State University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/032,190 external-priority patent/US6051849A/en
Priority claimed from US09/031,843 external-priority patent/US6608327B1/en
Application filed by North Carolina State University filed Critical North Carolina State University
Publication of AU2795699A publication Critical patent/AU2795699A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
AU27956/99A 1998-02-27 1999-02-26 Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth through masks, and gallium nitride semiconductor structures fabricated thereby Abandoned AU2795699A (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US09032190 1998-02-27
US09/032,190 US6051849A (en) 1998-02-27 1998-02-27 Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer
US09/031,843 US6608327B1 (en) 1998-02-27 1998-02-27 Gallium nitride semiconductor structure including laterally offset patterned layers
US09031843 1998-02-27
PCT/US1999/004346 WO1999044224A1 (en) 1998-02-27 1999-02-26 Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth through masks, and gallium nitride semiconductor structures fabricated thereby

Publications (1)

Publication Number Publication Date
AU2795699A true AU2795699A (en) 1999-09-15

Family

ID=26707683

Family Applications (1)

Application Number Title Priority Date Filing Date
AU27956/99A Abandoned AU2795699A (en) 1998-02-27 1999-02-26 Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth through masks, and gallium nitride semiconductor structures fabricated thereby

Country Status (7)

Country Link
EP (1) EP1070340A1 (en)
JP (1) JP2002505519A (en)
KR (1) KR100610396B1 (en)
CN (1) CN1143363C (en)
AU (1) AU2795699A (en)
CA (1) CA2321118C (en)
WO (1) WO1999044224A1 (en)

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ATE550461T1 (en) 1997-04-11 2012-04-15 Nichia Corp GROWTH METHOD FOR A NITRIDE SEMICONDUCTOR
US6265289B1 (en) 1998-06-10 2001-07-24 North Carolina State University Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby
JP4529215B2 (en) * 1999-10-29 2010-08-25 日亜化学工業株式会社 Nitride semiconductor growth method
US6380108B1 (en) 1999-12-21 2002-04-30 North Carolina State University Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby
US6403451B1 (en) 2000-02-09 2002-06-11 Noerh Carolina State University Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts
KR100865600B1 (en) * 2000-02-09 2008-10-27 노쓰 캐롤라이나 스테이트 유니버시티 Gallium nitride semiconductor structure and method for manufacturing same, and semiconductor structure and method for manufacturing same
US6261929B1 (en) 2000-02-24 2001-07-17 North Carolina State University Methods of forming a plurality of semiconductor layers using spaced trench arrays
TW518767B (en) * 2000-03-31 2003-01-21 Toyoda Gosei Kk Production method of III nitride compound semiconductor and III nitride compound semiconductor element
JP4291527B2 (en) 2000-10-13 2009-07-08 日本碍子株式会社 Method of using group III nitride epitaxial substrate
JP4920152B2 (en) * 2001-10-12 2012-04-18 住友電気工業株式会社 Structure substrate manufacturing method and semiconductor device manufacturing method
KR101363377B1 (en) * 2002-04-15 2014-02-14 더 리전츠 오브 더 유니버시티 오브 캘리포니아 Dislocation Reduction in Non-Polar Gallium Nitride Thin Films
US6876009B2 (en) * 2002-12-09 2005-04-05 Nichia Corporation Nitride semiconductor device and a process of manufacturing the same
US7453129B2 (en) 2002-12-18 2008-11-18 Noble Peak Vision Corp. Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry
US7012314B2 (en) * 2002-12-18 2006-03-14 Agere Systems Inc. Semiconductor devices with reduced active region defects and unique contacting schemes
KR100960764B1 (en) * 2003-01-28 2010-06-01 엘지전자 주식회사 Laser light emitting diode and method of manufacturing the same
FR2855650B1 (en) * 2003-05-30 2006-03-03 Soitec Silicon On Insulator SUBSTRATES FOR CONSTRAINTS SYSTEMS AND METHOD FOR CRYSTALLINE GROWTH ON SUCH A SUBSTRATE
US7622318B2 (en) 2004-03-30 2009-11-24 Sony Corporation Method for producing structured substrate, structured substrate, method for producing semiconductor light emitting device, semiconductor light emitting device, method for producing semiconductor device, semiconductor device, method for producing device, and device
KR100735488B1 (en) * 2006-02-03 2007-07-04 삼성전기주식회사 Method of manufacturing gallium nitride-based light emitting diode device
KR100773555B1 (en) * 2006-07-21 2007-11-06 삼성전자주식회사 Low defect semiconductor substrate and manufacturing method thereof
US7825432B2 (en) * 2007-03-09 2010-11-02 Cree, Inc. Nitride semiconductor structures with interlayer structures
US8362503B2 (en) 2007-03-09 2013-01-29 Cree, Inc. Thick nitride semiconductor structures with interlayer structures
JP4638958B1 (en) * 2009-08-20 2011-02-23 株式会社パウデック Manufacturing method of semiconductor device
CN102427101B (en) * 2011-11-30 2014-05-07 李园 Semiconductor structure and forming method thereof
US9293625B2 (en) * 2012-04-13 2016-03-22 Tandem Sun Ab Method for manufacturing a semiconductor device based on epitaxial growth
JP6799007B2 (en) * 2015-05-21 2020-12-09 エーファウ・グループ・エー・タルナー・ゲーエムベーハー How to apply a growth layer on the seed layer
CN106469648B (en) * 2015-08-31 2019-12-13 中国科学院微电子研究所 A kind of epitaxial structure and method
CN115552566A (en) * 2020-05-27 2022-12-30 苏州晶湛半导体有限公司 Group III nitride structure and method for making the same
JP7444984B2 (en) * 2020-06-22 2024-03-06 京セラ株式会社 Semiconductor device manufacturing method, semiconductor substrate, semiconductor device, electronic equipment

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US4522661A (en) * 1983-06-24 1985-06-11 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Low defect, high purity crystalline layers grown by selective deposition
JPH04127521A (en) * 1990-09-19 1992-04-28 Fujitsu Ltd Manufacture of semiconductor substrate
JPH04303920A (en) * 1991-03-29 1992-10-27 Nec Corp Insulating film/iii-v compound semiconductor stacked structure on group iv substrate
JP3830051B2 (en) * 1995-09-18 2006-10-04 株式会社 日立製作所 Nitride semiconductor substrate manufacturing method, nitride semiconductor substrate, optical semiconductor device manufacturing method, and optical semiconductor device
JP3757339B2 (en) * 1995-12-26 2006-03-22 富士通株式会社 Method for manufacturing compound semiconductor device
JPH09219540A (en) * 1996-02-07 1997-08-19 Rikagaku Kenkyusho Method of forming GaN thin film
JP3139445B2 (en) * 1997-03-13 2001-02-26 日本電気株式会社 GaN-based semiconductor growth method and GaN-based semiconductor film
EP0874405A3 (en) * 1997-03-25 2004-09-15 Mitsubishi Cable Industries, Ltd. GaN group crystal base member having low dislocation density, use thereof and manufacturing methods thereof
JPH10326912A (en) * 1997-03-25 1998-12-08 Mitsubishi Cable Ind Ltd Production of non-dislocated gan substrate and gan base material
JPH11191657A (en) * 1997-04-11 1999-07-13 Nichia Chem Ind Ltd Growing method of nitride semiconductor and nitride semiconductor device
ATE550461T1 (en) * 1997-04-11 2012-04-15 Nichia Corp GROWTH METHOD FOR A NITRIDE SEMICONDUCTOR
JPH10321529A (en) * 1997-05-22 1998-12-04 Nippon Telegr & Teleph Corp <Ntt> Double layer selective growth method
JPH11135770A (en) * 1997-09-01 1999-05-21 Sumitomo Chem Co Ltd Iii-v compd. semiconductor, manufacture thereof and semiconductor element
JP3925753B2 (en) * 1997-10-24 2007-06-06 ソニー株式会社 Semiconductor device, manufacturing method thereof, and semiconductor light emitting device

Also Published As

Publication number Publication date
CN1143363C (en) 2004-03-24
CA2321118C (en) 2008-06-03
CN1292149A (en) 2001-04-18
CA2321118A1 (en) 1999-09-02
WO1999044224A1 (en) 1999-09-02
JP2002505519A (en) 2002-02-19
KR100610396B1 (en) 2006-08-09
EP1070340A1 (en) 2001-01-24
KR20010041192A (en) 2001-05-15

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase