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AU2003284500A1 - Insulating film material containing organic silane or organic siloxane compound, method for producing same, and semiconductor device - Google Patents

Insulating film material containing organic silane or organic siloxane compound, method for producing same, and semiconductor device

Info

Publication number
AU2003284500A1
AU2003284500A1 AU2003284500A AU2003284500A AU2003284500A1 AU 2003284500 A1 AU2003284500 A1 AU 2003284500A1 AU 2003284500 A AU2003284500 A AU 2003284500A AU 2003284500 A AU2003284500 A AU 2003284500A AU 2003284500 A1 AU2003284500 A1 AU 2003284500A1
Authority
AU
Australia
Prior art keywords
semiconductor device
insulating film
material containing
film material
siloxane compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003284500A
Inventor
Daiji Hara
Keisuke Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tosoh Corp
Original Assignee
Tosoh Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tosoh Corp filed Critical Tosoh Corp
Publication of AU2003284500A1 publication Critical patent/AU2003284500A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H01B3/46—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes silicones
    • H10P14/6922—
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/18—Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
    • C07F7/1804—Compounds having Si-O-C linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/18—Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
    • C07F7/1804—Compounds having Si-O-C linkages
    • C07F7/1872—Preparation; Treatments not provided for in C07F7/20
    • C07F7/1876—Preparation; Treatments not provided for in C07F7/20 by reactions involving the formation of Si-C linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/21—Cyclic compounds having at least one ring containing silicon, but no carbon in the ring
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/62—Plasma-deposition of organic layers
    • H10P14/6336—
    • H10P14/665—
    • H10P14/6682—
    • H10P14/6686—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
AU2003284500A 2002-11-28 2003-11-28 Insulating film material containing organic silane or organic siloxane compound, method for producing same, and semiconductor device Abandoned AU2003284500A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2002-346226 2002-11-28
JP2002346226 2002-11-28
JP2003198654 2003-07-17
JP2003-198654 2003-07-17
PCT/JP2003/015281 WO2004049422A1 (en) 2002-11-28 2003-11-28 Insulating film material containing organic silane or organic siloxane compound, method for producing same, and semiconductor device

Publications (1)

Publication Number Publication Date
AU2003284500A1 true AU2003284500A1 (en) 2004-06-18

Family

ID=32396297

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003284500A Abandoned AU2003284500A1 (en) 2002-11-28 2003-11-28 Insulating film material containing organic silane or organic siloxane compound, method for producing same, and semiconductor device

Country Status (7)

Country Link
US (1) US7935425B2 (en)
EP (2) EP1566835B1 (en)
JP (1) JP5003722B2 (en)
KR (1) KR101156633B1 (en)
AU (1) AU2003284500A1 (en)
TW (1) TWI282124B (en)
WO (1) WO2004049422A1 (en)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005053009A1 (en) * 2003-11-28 2005-06-09 Nec Corporation Porous insulating film, method for producing same, and semiconductor device using porous insulating film
US7491658B2 (en) * 2004-10-13 2009-02-17 International Business Machines Corporation Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality
US8513448B2 (en) 2005-01-31 2013-08-20 Tosoh Corporation Cyclic siloxane compound, a material for forming Si-containing film, and its use
CN101111501B (en) * 2005-01-31 2015-07-15 东曹株式会社 Cyclic siloxane compound, si-containing film-forming material, and use thereof
FR2887891B1 (en) * 2005-07-01 2007-09-21 Commissariat Energie Atomique POLYSILOXANE - BASED MATERIAL WITH LOW HYSTERESIS AND METHOD OF DEPOSITING SUCH MATERIAL.
JPWO2007029522A1 (en) * 2005-09-01 2009-03-19 住友電気工業株式会社 Translucent thin film, optical element, and manufacturing method thereof
JP4641933B2 (en) * 2005-11-28 2011-03-02 三井化学株式会社 Thin film formation method
US7531458B2 (en) 2006-07-31 2009-05-12 Rohm And Haas Electronics Materials Llp Organometallic compounds
JP2008274365A (en) * 2007-05-01 2008-11-13 Shin Etsu Chem Co Ltd Si-containing film forming material, Si-containing film, method for producing the same, and semiconductor device
US20100261925A1 (en) * 2007-07-10 2010-10-14 Jsr Corporation Method for producing silicon compound
JP5015705B2 (en) * 2007-09-18 2012-08-29 ルネサスエレクトロニクス株式会社 Interlayer insulating film forming method, interlayer insulating film, semiconductor device, and semiconductor manufacturing apparatus
KR100962044B1 (en) * 2007-12-06 2010-06-08 성균관대학교산학협력단 Low dielectric plasma polymer thin film and method for manufacturing same
JP4379637B1 (en) 2009-03-30 2009-12-09 Ｊｓｒ株式会社 Method for producing organosilicon compound
KR20130043084A (en) 2010-02-17 2013-04-29 레르 리키드 쏘시에떼 아노님 뿌르 레？드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 - VAPOR DEPOSITION METHODS OF SiCOH LOW-K FILMS
JP6007662B2 (en) 2011-09-05 2016-10-12 東ソー株式会社 Film forming material, sealing film using the same, and use thereof
JP5904866B2 (en) * 2012-05-08 2016-04-20 ルネサスエレクトロニクス株式会社 Semiconductor device manufacturing method and semiconductor device
EP2875166B1 (en) * 2012-07-20 2018-04-11 L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Organosilane precursors for ald/cvd silicon-containing film applications
WO2015190644A1 (en) * 2014-06-10 2015-12-17 한국과학기술원 Cell culture substrate, manufacturing method therefor, and use thereof
US20170358445A1 (en) 2016-06-13 2017-12-14 Gvd Corporation Methods for plasma depositing polymers comprising cyclic siloxanes and related compositions and articles
US11679412B2 (en) 2016-06-13 2023-06-20 Gvd Corporation Methods for plasma depositing polymers comprising cyclic siloxanes and related compositions and articles
MX2019015062A (en) * 2017-06-29 2020-02-13 Dow Global Technologies Llc Polyolefin composition.
KR20220061162A (en) * 2019-09-13 2022-05-12 버슘머트리얼즈 유에스, 엘엘씨 Monoalkoxysilane and high-density organosilica film prepared therefrom

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1014156A (en) * 1963-01-14 1965-12-22 Dow Corning Organosilicon compounds
US3763212A (en) * 1972-02-04 1973-10-02 Gen Electric Hydrolysis of alkylalkenyldichlorosilane
DE3311642A1 (en) * 1983-02-11 1984-10-11 Dr. O. Martens & Co Nachf., 8021 Baierbrunn ODOR IMPROVERS, METHOD FOR THE PRODUCTION AND USE OF THE ODOR IMPROVERS
DE3304822C1 (en) * 1983-02-11 1984-06-20 Dr. O. Martens & Co Nachf., 8021 Baierbrunn Odour improver and process for its preparation
JPH02192729A (en) 1989-01-20 1990-07-30 Fujitsu Ltd Manufacture of insulating layer
US5120680A (en) 1990-07-19 1992-06-09 At&T Bell Laboratories Method for depositing dielectric layers
JPH05279856A (en) 1992-03-31 1993-10-26 Nec Corp Vapor growth method
JP3383998B2 (en) * 1992-08-06 2003-03-10 東ソー株式会社 Method for producing polyolefin
US5334688A (en) * 1993-04-19 1994-08-02 Hercules Incorporated Fully substituted cyclopolysiloxanes and their use for making organosilicon polymers
JP2795135B2 (en) * 1993-06-07 1998-09-10 信越化学工業株式会社 Method for producing organoalkoxysilane compound
JPH07115091A (en) 1993-10-18 1995-05-02 Sony Corp Insulating film forming method in semiconductor device and CVD apparatus
JP2757767B2 (en) 1994-03-30 1998-05-25 日本電気株式会社 Method for manufacturing semiconductor device
US5693735A (en) * 1995-07-12 1997-12-02 Shin-Etsu Chemical Co., Ltd. Trimethylsiloxy group-containing polysiloxane and a process for producing the same
JP3440714B2 (en) 1995-12-11 2003-08-25 ソニー株式会社 Method for forming silicon compound based insulating film
JPH09227685A (en) * 1995-12-19 1997-09-02 Pola Chem Ind Inc Novel fluorine-modified silicone
JP3226479B2 (en) 1996-08-29 2001-11-05 松下電器産業株式会社 Method of forming interlayer insulating film
US5989998A (en) 1996-08-29 1999-11-23 Matsushita Electric Industrial Co., Ltd. Method of forming interlayer insulating film
US6030706A (en) 1996-11-08 2000-02-29 Texas Instruments Incorporated Integrated circuit insulator and method
JP3726226B2 (en) 1998-02-05 2005-12-14 日本エー・エス・エム株式会社 Insulating film and manufacturing method thereof
US6593247B1 (en) 1998-02-11 2003-07-15 Applied Materials, Inc. Method of depositing low k films using an oxidizing plasma
JP2000302791A (en) 1999-04-20 2000-10-31 Fujitsu Ltd Silicon compound, insulating film forming material and semiconductor device
JP2001274153A (en) * 2000-03-24 2001-10-05 Hitachi Kokusai Electric Inc Manufacturing method of insulating film
US6806161B2 (en) * 2000-04-28 2004-10-19 Lg Chem Investment, Ltd. Process for preparing insulating material having low dielectric constant
JP2002176835A (en) * 2000-12-18 2002-06-25 Yanmar Agricult Equip Co Ltd Combine
JP2002179687A (en) * 2000-12-18 2002-06-26 Dow Corning Toray Silicone Co Ltd Method for producing organoalkoxysilane
JP2002201416A (en) 2000-12-28 2002-07-19 Hitachi Chem Co Ltd Coating liquid for forming semiconductor silica coating film, semiconductor silica coating film, and semiconductor device
US6562470B2 (en) * 2001-01-10 2003-05-13 General Electric Company Method for making coated substrates and articles made thereby
SG98468A1 (en) * 2001-01-17 2003-09-19 Air Prod & Chem Organosilicon precursors for interlayer dielectric films with low dielectric constants
US6583048B2 (en) 2001-01-17 2003-06-24 Air Products And Chemicals, Inc. Organosilicon precursors for interlayer dielectric films with low dielectric constants
US6936537B2 (en) 2001-06-19 2005-08-30 The Boc Group, Inc. Methods for forming low-k dielectric films
JP3978427B2 (en) 2001-08-30 2007-09-19 東京エレクトロン株式会社 Film forming method and film forming apparatus
WO2003038143A1 (en) * 2001-10-30 2003-05-08 Massachusetts Institute Of Technology Fluorocarbon-organosilicon copolymers and coatings prepared by hot-filament chemical vapor deposition
JP4411077B2 (en) * 2001-11-08 2010-02-10 北興化学工業株式会社 Method for producing triorgano-monoalkoxysilane and method for producing triorgano-monochlorosilane
KR101227664B1 (en) * 2002-01-31 2013-01-29 도소 가부시키가이샤 Material for insulation film comprising organosilane compound, its manufacturing method and semiconductor device
JP4217870B2 (en) 2002-07-15 2009-02-04 日本電気株式会社 Organosiloxane copolymer film, manufacturing method thereof, growth apparatus, and semiconductor device using the copolymer film
US7011890B2 (en) * 2003-03-03 2006-03-14 Applied Materials Inc. Modulated/composited CVD low-k films with improved mechanical and electrical properties for nanoelectronic devices
US7288292B2 (en) * 2003-03-18 2007-10-30 International Business Machines Corporation Ultra low k (ULK) SiCOH film and method
WO2005053009A1 (en) * 2003-11-28 2005-06-09 Nec Corporation Porous insulating film, method for producing same, and semiconductor device using porous insulating film
JP2008274365A (en) * 2007-05-01 2008-11-13 Shin Etsu Chem Co Ltd Si-containing film forming material, Si-containing film, method for producing the same, and semiconductor device

Also Published As

Publication number Publication date
JP5003722B2 (en) 2012-08-15
KR101156633B1 (en) 2012-07-03
TW200423256A (en) 2004-11-01
EP1566835B1 (en) 2012-08-01
US7935425B2 (en) 2011-05-03
TWI282124B (en) 2007-06-01
US20060151884A1 (en) 2006-07-13
EP2278612A3 (en) 2011-03-02
EP1566835A4 (en) 2008-02-20
JP2009179640A (en) 2009-08-13
EP2278612A2 (en) 2011-01-26
KR20050084821A (en) 2005-08-29
EP1566835A1 (en) 2005-08-24
EP2278612B1 (en) 2014-12-10
WO2004049422A1 (en) 2004-06-10

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase