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AU2003280803A1 - Optical sensor - Google Patents

Optical sensor

Info

Publication number
AU2003280803A1
AU2003280803A1 AU2003280803A AU2003280803A AU2003280803A1 AU 2003280803 A1 AU2003280803 A1 AU 2003280803A1 AU 2003280803 A AU2003280803 A AU 2003280803A AU 2003280803 A AU2003280803 A AU 2003280803A AU 2003280803 A1 AU2003280803 A1 AU 2003280803A1
Authority
AU
Australia
Prior art keywords
optical sensor
optical
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003280803A
Inventor
Zenji Hiroi
Yuji Muraoka
Yutaka Ueda
Tohru Yamauchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of AU2003280803A1 publication Critical patent/AU2003280803A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/222Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
AU2003280803A 2002-11-15 2003-11-14 Optical sensor Abandoned AU2003280803A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002-332745 2002-11-15
JP2002332745A JP2004172166A (en) 2002-11-15 2002-11-15 Light sensor
PCT/JP2003/014522 WO2004047187A1 (en) 2002-11-15 2003-11-14 Optical sensor

Publications (1)

Publication Number Publication Date
AU2003280803A1 true AU2003280803A1 (en) 2004-06-15

Family

ID=32321672

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003280803A Abandoned AU2003280803A1 (en) 2002-11-15 2003-11-14 Optical sensor

Country Status (3)

Country Link
JP (1) JP2004172166A (en)
AU (1) AU2003280803A1 (en)
WO (1) WO2004047187A1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100458382C (en) * 2005-07-06 2009-02-04 中国科学院物理研究所 Quick-responding high-sensitivity ultraviolet detector made by calcium-titanium oxide monocrystal material
WO2007060758A1 (en) * 2005-11-24 2007-05-31 Murata Manufacturing Co., Ltd. Ultraviolet sensor
JP3952076B1 (en) 2006-04-25 2007-08-01 株式会社村田製作所 UV sensor
JP5392414B2 (en) 2010-09-13 2014-01-22 株式会社村田製作所 Photodiode and ultraviolet sensor
CN102509743B (en) * 2012-01-04 2013-10-09 吉林大学 Ultraviolet photodetector and preparation method based on titanium dioxide/strontium titanate heterojunction
JP6260764B2 (en) * 2013-09-26 2018-01-17 セイコーエプソン株式会社 Photoelectric conversion element and manufacturing method thereof
JP6365839B2 (en) * 2013-12-11 2018-08-01 セイコーエプソン株式会社 Solid-state imaging device and image acquisition method
JP6547273B2 (en) * 2013-12-26 2019-07-24 株式会社リコー p-type oxide semiconductor, composition for producing p-type oxide semiconductor, method for producing p-type oxide semiconductor, semiconductor element, display element, image display device, and system

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5797685A (en) * 1980-12-11 1982-06-17 Tdk Corp Semiconductor photovoltaic element
JPS57106086A (en) * 1980-12-23 1982-07-01 Tdk Corp Solar cell and manufacture thereof
JP3505106B2 (en) * 1999-07-01 2004-03-08 スター精密株式会社 Photoelectric conversion element

Also Published As

Publication number Publication date
JP2004172166A (en) 2004-06-17
WO2004047187A1 (en) 2004-06-03

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase