AU2003280803A1 - Optical sensor - Google Patents
Optical sensorInfo
- Publication number
- AU2003280803A1 AU2003280803A1 AU2003280803A AU2003280803A AU2003280803A1 AU 2003280803 A1 AU2003280803 A1 AU 2003280803A1 AU 2003280803 A AU2003280803 A AU 2003280803A AU 2003280803 A AU2003280803 A AU 2003280803A AU 2003280803 A1 AU2003280803 A1 AU 2003280803A1
- Authority
- AU
- Australia
- Prior art keywords
- optical sensor
- optical
- sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 230000003287 optical effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002-332745 | 2002-11-15 | ||
JP2002332745A JP2004172166A (en) | 2002-11-15 | 2002-11-15 | Light sensor |
PCT/JP2003/014522 WO2004047187A1 (en) | 2002-11-15 | 2003-11-14 | Optical sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2003280803A1 true AU2003280803A1 (en) | 2004-06-15 |
Family
ID=32321672
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2003280803A Abandoned AU2003280803A1 (en) | 2002-11-15 | 2003-11-14 | Optical sensor |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2004172166A (en) |
AU (1) | AU2003280803A1 (en) |
WO (1) | WO2004047187A1 (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100458382C (en) * | 2005-07-06 | 2009-02-04 | 中国科学院物理研究所 | Quick-responding high-sensitivity ultraviolet detector made by calcium-titanium oxide monocrystal material |
WO2007060758A1 (en) * | 2005-11-24 | 2007-05-31 | Murata Manufacturing Co., Ltd. | Ultraviolet sensor |
JP3952076B1 (en) | 2006-04-25 | 2007-08-01 | 株式会社村田製作所 | UV sensor |
JP5392414B2 (en) | 2010-09-13 | 2014-01-22 | 株式会社村田製作所 | Photodiode and ultraviolet sensor |
CN102509743B (en) * | 2012-01-04 | 2013-10-09 | 吉林大学 | Ultraviolet photodetector and preparation method based on titanium dioxide/strontium titanate heterojunction |
JP6260764B2 (en) * | 2013-09-26 | 2018-01-17 | セイコーエプソン株式会社 | Photoelectric conversion element and manufacturing method thereof |
JP6365839B2 (en) * | 2013-12-11 | 2018-08-01 | セイコーエプソン株式会社 | Solid-state imaging device and image acquisition method |
JP6547273B2 (en) * | 2013-12-26 | 2019-07-24 | 株式会社リコー | p-type oxide semiconductor, composition for producing p-type oxide semiconductor, method for producing p-type oxide semiconductor, semiconductor element, display element, image display device, and system |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5797685A (en) * | 1980-12-11 | 1982-06-17 | Tdk Corp | Semiconductor photovoltaic element |
JPS57106086A (en) * | 1980-12-23 | 1982-07-01 | Tdk Corp | Solar cell and manufacture thereof |
JP3505106B2 (en) * | 1999-07-01 | 2004-03-08 | スター精密株式会社 | Photoelectric conversion element |
-
2002
- 2002-11-15 JP JP2002332745A patent/JP2004172166A/en active Pending
-
2003
- 2003-11-14 AU AU2003280803A patent/AU2003280803A1/en not_active Abandoned
- 2003-11-14 WO PCT/JP2003/014522 patent/WO2004047187A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
JP2004172166A (en) | 2004-06-17 |
WO2004047187A1 (en) | 2004-06-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase |