AU2002238422A1 - Method for producing semiconductor components - Google Patents
Method for producing semiconductor componentsInfo
- Publication number
- AU2002238422A1 AU2002238422A1 AU2002238422A AU2002238422A AU2002238422A1 AU 2002238422 A1 AU2002238422 A1 AU 2002238422A1 AU 2002238422 A AU2002238422 A AU 2002238422A AU 2002238422 A AU2002238422 A AU 2002238422A AU 2002238422 A1 AU2002238422 A1 AU 2002238422A1
- Authority
- AU
- Australia
- Prior art keywords
- semiconductor components
- producing semiconductor
- producing
- components
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/018—Bonding of wafers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10102315A DE10102315B4 (en) | 2001-01-18 | 2001-01-18 | Method of fabricating semiconductor devices and intermediate in these methods |
DE10102315.4 | 2001-01-18 | ||
PCT/EP2001/014614 WO2002058163A2 (en) | 2001-01-18 | 2001-12-12 | Method for producing semiconductor components |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2002238422A1 true AU2002238422A1 (en) | 2002-07-30 |
Family
ID=7671092
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2002238422A Abandoned AU2002238422A1 (en) | 2001-01-18 | 2001-12-12 | Method for producing semiconductor components |
Country Status (3)
Country | Link |
---|---|
AU (1) | AU2002238422A1 (en) |
DE (1) | DE10102315B4 (en) |
WO (1) | WO2002058163A2 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8168000B2 (en) | 2005-06-15 | 2012-05-01 | International Rectifier Corporation | III-nitride semiconductor device fabrication |
KR101039970B1 (en) * | 2010-02-11 | 2011-06-09 | 엘지이노텍 주식회사 | Semiconductor layer forming method and light emitting device manufacturing method |
DE102018111227A1 (en) * | 2018-05-09 | 2019-11-14 | Osram Opto Semiconductors Gmbh | Method for cutting an epitaxially grown semiconductor body and semiconductor chip |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52135667A (en) * | 1976-05-10 | 1977-11-12 | Toshiba Corp | Dicing method of semiconductor wafer |
KR930008861B1 (en) * | 1991-05-16 | 1993-09-16 | 재단법인 한국전자통신연구소 | Manufacturing method of semicondcutor substrate having composite layer |
JP2748354B2 (en) * | 1993-10-21 | 1998-05-06 | 日亜化学工業株式会社 | Method of manufacturing gallium nitride based compound semiconductor chip |
JPH0864791A (en) * | 1994-08-23 | 1996-03-08 | Matsushita Electric Ind Co Ltd | Epitaxial growth method |
US5882988A (en) * | 1995-08-16 | 1999-03-16 | Philips Electronics North America Corporation | Semiconductor chip-making without scribing |
JPH10125629A (en) * | 1996-10-17 | 1998-05-15 | Nec Eng Ltd | Method of cutting semiconductor wafer |
DE19715572A1 (en) * | 1997-04-15 | 1998-10-22 | Telefunken Microelectron | Selective epitaxy of III-V nitride semiconductor layers |
EP1007771A4 (en) * | 1997-07-03 | 2003-03-05 | Cbl Technologies | COMPENSATION FOR THERMAL IMBALANCE TO OBTAIN AUTONOMOUS SUBSTRATES BY EPITAXIC DEPOSITION |
DE19838810B4 (en) * | 1998-08-26 | 2006-02-09 | Osram Opto Semiconductors Gmbh | Method for producing a plurality of Ga (In, Al) N light-emitting diode chips |
CN1249531A (en) * | 1998-09-04 | 2000-04-05 | 佳能株式会社 | Process for mfg. semiconductor substrate |
JP3235586B2 (en) * | 1999-02-25 | 2001-12-04 | 日本電気株式会社 | Semiconductor device and method of manufacturing semiconductor device |
JP2001015721A (en) * | 1999-04-30 | 2001-01-19 | Canon Inc | Method for separating composite member and method for producing thin film |
-
2001
- 2001-01-18 DE DE10102315A patent/DE10102315B4/en not_active Expired - Fee Related
- 2001-12-12 WO PCT/EP2001/014614 patent/WO2002058163A2/en not_active Application Discontinuation
- 2001-12-12 AU AU2002238422A patent/AU2002238422A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
DE10102315A1 (en) | 2002-07-25 |
DE10102315B4 (en) | 2012-10-25 |
WO2002058163A3 (en) | 2002-12-12 |
WO2002058163A2 (en) | 2002-07-25 |
WO2002058163A8 (en) | 2003-03-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase |