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AU2002222170A1 - Method and system for icosaborane implantation - Google Patents

Method and system for icosaborane implantation

Info

Publication number
AU2002222170A1
AU2002222170A1 AU2002222170A AU2217002A AU2002222170A1 AU 2002222170 A1 AU2002222170 A1 AU 2002222170A1 AU 2002222170 A AU2002222170 A AU 2002222170A AU 2217002 A AU2217002 A AU 2217002A AU 2002222170 A1 AU2002222170 A1 AU 2002222170A1
Authority
AU
Australia
Prior art keywords
icosaborane
implantation
icosaborane implantation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002222170A
Inventor
Given Not
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Axcelis Technologies Inc
Original Assignee
Axcelis Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Axcelis Technologies Inc filed Critical Axcelis Technologies Inc
Publication of AU2002222170A1 publication Critical patent/AU2002222170A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H10P30/20—
    • H10P30/21—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H10P30/204—
    • H10P30/224—
    • H10P30/225—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
AU2002222170A 2000-12-15 2001-12-11 Method and system for icosaborane implantation Abandoned AU2002222170A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/738,486 2000-12-15
US09/738,486 US6479828B2 (en) 2000-12-15 2000-12-15 Method and system for icosaborane implantation
PCT/GB2001/005477 WO2002048425A2 (en) 2000-12-15 2001-12-11 Method and system for icosaborane implantation

Publications (1)

Publication Number Publication Date
AU2002222170A1 true AU2002222170A1 (en) 2002-06-24

Family

ID=24968227

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002222170A Abandoned AU2002222170A1 (en) 2000-12-15 2001-12-11 Method and system for icosaborane implantation

Country Status (8)

Country Link
US (1) US6479828B2 (en)
EP (1) EP1341949A2 (en)
JP (1) JP4029394B2 (en)
KR (1) KR100856807B1 (en)
CN (1) CN1269990C (en)
AU (1) AU2002222170A1 (en)
TW (1) TW527619B (en)
WO (1) WO2002048425A2 (en)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7372043B2 (en) * 2002-02-22 2008-05-13 Agilent Technologies, Inc. Apparatus and method for ion production enhancement
US7135689B2 (en) * 2002-02-22 2006-11-14 Agilent Technologies, Inc. Apparatus and method for ion production enhancement
US7132670B2 (en) * 2002-02-22 2006-11-07 Agilent Technologies, Inc. Apparatus and method for ion production enhancement
US6825462B2 (en) * 2002-02-22 2004-11-30 Agilent Technologies, Inc. Apparatus and method for ion production enhancement
GB2387022B (en) * 2002-03-28 2005-12-21 Applied Materials Inc Monatomic boron ion source and method
US7518124B2 (en) * 2002-03-28 2009-04-14 Applied Materials, Inc. Monatomic dopant ion source and method
EP1579481B1 (en) * 2002-06-26 2013-12-04 Semequip, Inc. A method of semiconductor manufacturing by the implantation of boron hydride cluster ions
CN101908473B (en) * 2002-06-26 2013-03-13 山米奎普公司 Method of manufacturing CMOS devices by the implantation of N- and P-type cluster ions and negative ions
US6686595B2 (en) * 2002-06-26 2004-02-03 Semequip Inc. Electron impact ion source
US7791047B2 (en) * 2003-12-12 2010-09-07 Semequip, Inc. Method and apparatus for extracting ions from an ion source for use in ion implantation
WO2005059942A2 (en) 2003-12-12 2005-06-30 Semequip, Inc. Method and apparatus for extending equipment uptime in ion implantation
JP2007266022A (en) * 2004-05-25 2007-10-11 Matsushita Electric Ind Co Ltd Plasma generator, plasma processing apparatus using the same, and electronic equipment
ATE546824T1 (en) * 2004-06-08 2012-03-15 Dichroic Cell S R L SYSTEM FOR PLASMA-ASSISTED CHEMICAL VAPOR DEPOSION AT LOW ENERGY
US7397048B2 (en) * 2004-09-17 2008-07-08 Varian Semiconductor Equipment Associates, Inc. Technique for boron implantation
US7446326B2 (en) * 2005-08-31 2008-11-04 Varian Semiconductor Equipment Associates, Inc. Technique for improving ion implanter productivity
WO2009039382A1 (en) 2007-09-21 2009-03-26 Semequip. Inc. Method for extending equipment uptime in ion implantation
US7759657B2 (en) 2008-06-19 2010-07-20 Axcelis Technologies, Inc. Methods for implanting B22Hx and its ionized lower mass byproducts
CN102165561A (en) * 2008-09-25 2011-08-24 应用材料股份有限公司 Defect-free junction formation using self-amorphizing implants using octadecaborane
US20110070724A1 (en) * 2009-09-21 2011-03-24 Applied Materials, Inc. Defect-free junction formation using octadecaborane self-amorphizing implants
US8350236B2 (en) * 2010-01-12 2013-01-08 Axcelis Technologies, Inc. Aromatic molecular carbon implantation processes
US8344337B2 (en) 2010-04-21 2013-01-01 Axcelis Technologies, Inc. Silaborane implantation processes
JP6120259B2 (en) * 2012-05-10 2017-04-26 株式会社アルバック Ion implantation method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3305696A (en) * 1965-10-24 1967-02-21 Electro Optical Systems Inc Negative ion source having gas nozzle integral with the cathode
JP3215898B2 (en) * 1992-04-28 2001-10-09 日本電信電話株式会社 Plasma CVD method and plasma CVD apparatus
JP3749924B2 (en) * 1996-12-03 2006-03-01 富士通株式会社 Ion implantation method and semiconductor device manufacturing method

Also Published As

Publication number Publication date
WO2002048425A3 (en) 2002-09-06
US20020074521A1 (en) 2002-06-20
KR100856807B1 (en) 2008-09-05
CN1269990C (en) 2006-08-16
JP4029394B2 (en) 2008-01-09
TW527619B (en) 2003-04-11
EP1341949A2 (en) 2003-09-10
JP2004528703A (en) 2004-09-16
WO2002048425A2 (en) 2002-06-20
CN1489639A (en) 2004-04-14
KR20030061841A (en) 2003-07-22
US6479828B2 (en) 2002-11-12

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