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AU2002220107A1 - Group iii nitride light emitting devices with gallium-free layers - Google Patents

Group iii nitride light emitting devices with gallium-free layers

Info

Publication number
AU2002220107A1
AU2002220107A1 AU2002220107A AU2010702A AU2002220107A1 AU 2002220107 A1 AU2002220107 A1 AU 2002220107A1 AU 2002220107 A AU2002220107 A AU 2002220107A AU 2010702 A AU2010702 A AU 2010702A AU 2002220107 A1 AU2002220107 A1 AU 2002220107A1
Authority
AU
Australia
Prior art keywords
gallium
light emitting
group iii
emitting devices
iii nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002220107A
Inventor
Michael John Bergmann
Kathleen Marie Doverspike
John Adam Edmond
Hua-Shuang Kong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Publication of AU2002220107A1 publication Critical patent/AU2002220107A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
AU2002220107A 2000-11-03 2001-11-02 Group iii nitride light emitting devices with gallium-free layers Abandoned AU2002220107A1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US09/706,057 2000-11-03
US09/706,057 US6534797B1 (en) 2000-11-03 2000-11-03 Group III nitride light emitting devices with gallium-free layers
US09706057 2000-11-03
PCT/US2001/045636 WO2002037579A2 (en) 2000-11-03 2001-11-02 Group iii nitride light emitting devices with gallium-free layers

Publications (1)

Publication Number Publication Date
AU2002220107A1 true AU2002220107A1 (en) 2002-05-15

Family

ID=24836054

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002220107A Abandoned AU2002220107A1 (en) 2000-11-03 2001-11-02 Group iii nitride light emitting devices with gallium-free layers

Country Status (10)

Country Link
US (3) US6534797B1 (en)
EP (1) EP1344260A2 (en)
JP (1) JP2004513520A (en)
KR (1) KR20030045072A (en)
CN (1) CN100355093C (en)
AU (1) AU2002220107A1 (en)
CA (1) CA2426718A1 (en)
MY (1) MY119108A (en)
TW (1) TW550833B (en)
WO (1) WO2002037579A2 (en)

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Also Published As

Publication number Publication date
US6784461B2 (en) 2004-08-31
CA2426718A1 (en) 2002-05-10
JP2004513520A (en) 2004-04-30
TW550833B (en) 2003-09-01
MY119108A (en) 2005-03-31
EP1344260A2 (en) 2003-09-17
WO2002037579A2 (en) 2002-05-10
US20030164506A1 (en) 2003-09-04
US6717185B2 (en) 2004-04-06
US6534797B1 (en) 2003-03-18
US20030164507A1 (en) 2003-09-04
CN1473363A (en) 2004-02-04
KR20030045072A (en) 2003-06-09
CN100355093C (en) 2007-12-12
WO2002037579A3 (en) 2002-07-18

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