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AU2001296916A1 - Wafer area pressure control for plasma confinement - Google Patents

Wafer area pressure control for plasma confinement

Info

Publication number
AU2001296916A1
AU2001296916A1 AU2001296916A AU9691601A AU2001296916A1 AU 2001296916 A1 AU2001296916 A1 AU 2001296916A1 AU 2001296916 A AU2001296916 A AU 2001296916A AU 9691601 A AU9691601 A AU 9691601A AU 2001296916 A1 AU2001296916 A1 AU 2001296916A1
Authority
AU
Australia
Prior art keywords
pressure control
plasma confinement
wafer area
area pressure
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001296916A
Inventor
David W. Benzing
Albert R. Ellingboe
Han Taejoon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of AU2001296916A1 publication Critical patent/AU2001296916A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • ing And Chemical Polishing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Plasma Technology (AREA)
AU2001296916A 2000-10-04 2001-09-26 Wafer area pressure control for plasma confinement Abandoned AU2001296916A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/684,695 US6492774B1 (en) 2000-10-04 2000-10-04 Wafer area pressure control for plasma confinement
US09/684,695 2000-10-04
PCT/US2001/042332 WO2002029848A2 (en) 2000-10-04 2001-09-26 Wafer area pressure control for plasma confinement

Publications (1)

Publication Number Publication Date
AU2001296916A1 true AU2001296916A1 (en) 2002-04-15

Family

ID=24749169

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001296916A Abandoned AU2001296916A1 (en) 2000-10-04 2001-09-26 Wafer area pressure control for plasma confinement

Country Status (9)

Country Link
US (3) US6492774B1 (en)
EP (1) EP1323179B1 (en)
JP (2) JP5100952B2 (en)
KR (1) KR100603682B1 (en)
CN (1) CN1322539C (en)
AU (1) AU2001296916A1 (en)
RU (1) RU2270492C2 (en)
TW (1) TW587272B (en)
WO (1) WO2002029848A2 (en)

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US7740736B2 (en) * 2006-06-08 2010-06-22 Lam Research Corporation Methods and apparatus for preventing plasma un-confinement events in a plasma processing chamber
US8043430B2 (en) * 2006-12-20 2011-10-25 Lam Research Corporation Methods and apparatuses for controlling gas flow conductance in a capacitively-coupled plasma processing chamber
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US9295148B2 (en) 2012-12-14 2016-03-22 Lam Research Corporation Computation of statistics for statistical data decimation
US9390893B2 (en) 2012-02-22 2016-07-12 Lam Research Corporation Sub-pulsing during a state
US10128090B2 (en) 2012-02-22 2018-11-13 Lam Research Corporation RF impedance model based fault detection
US9842725B2 (en) 2013-01-31 2017-12-12 Lam Research Corporation Using modeling to determine ion energy associated with a plasma system
US9368329B2 (en) 2012-02-22 2016-06-14 Lam Research Corporation Methods and apparatus for synchronizing RF pulses in a plasma processing system
US10157729B2 (en) 2012-02-22 2018-12-18 Lam Research Corporation Soft pulsing
US9530620B2 (en) 2013-03-15 2016-12-27 Lam Research Corporation Dual control modes
US9320126B2 (en) 2012-12-17 2016-04-19 Lam Research Corporation Determining a value of a variable on an RF transmission model
US9502216B2 (en) 2013-01-31 2016-11-22 Lam Research Corporation Using modeling to determine wafer bias associated with a plasma system
US10325759B2 (en) 2012-02-22 2019-06-18 Lam Research Corporation Multiple control modes
US9114666B2 (en) 2012-02-22 2015-08-25 Lam Research Corporation Methods and apparatus for controlling plasma in a plasma processing system
US9171699B2 (en) 2012-02-22 2015-10-27 Lam Research Corporation Impedance-based adjustment of power and frequency
US9408288B2 (en) 2012-09-14 2016-08-02 Lam Research Corporation Edge ramping
US9043525B2 (en) 2012-12-14 2015-05-26 Lam Research Corporation Optimizing a rate of transfer of data between an RF generator and a host system within a plasma tool
US9155182B2 (en) 2013-01-11 2015-10-06 Lam Research Corporation Tuning a parameter associated with plasma impedance
US9620337B2 (en) 2013-01-31 2017-04-11 Lam Research Corporation Determining a malfunctioning device in a plasma system
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US9119283B2 (en) 2013-03-14 2015-08-25 Lam Research Corporation Chamber matching for power control mode
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US10950421B2 (en) 2014-04-21 2021-03-16 Lam Research Corporation Using modeling for identifying a location of a fault in an RF transmission system for a plasma system
US9536749B2 (en) 2014-12-15 2017-01-03 Lam Research Corporation Ion energy control by RF pulse shape
US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
US10957561B2 (en) 2015-07-30 2021-03-23 Lam Research Corporation Gas delivery system
CN105390362B (en) * 2015-10-29 2017-06-23 上海华力微电子有限公司 System and method for changing the O-ring on pressure-control valve
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US10651015B2 (en) 2016-02-12 2020-05-12 Lam Research Corporation Variable depth edge ring for etch uniformity control
US20170278679A1 (en) * 2016-03-24 2017-09-28 Lam Research Corporation Method and apparatus for controlling process within wafer uniformity
KR101680850B1 (en) * 2016-06-28 2016-11-29 주식회사 기가레인 Plasma processing apparatus having control of exhaust flow path size
US10410832B2 (en) 2016-08-19 2019-09-10 Lam Research Corporation Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment
CN118380373A (en) 2017-11-21 2024-07-23 朗姆研究公司 Bottom edge ring and middle edge ring
CN110767568B (en) * 2018-07-26 2022-05-27 北京北方华创微电子装备有限公司 Pressure regulating assembly, lower electrode device, process chamber and semiconductor processing equipment
CN115513023B (en) * 2021-06-23 2025-07-08 中微半导体设备(上海)股份有限公司 Confinement ring, plasma processing apparatus, and exhaust control method thereof
TWI857462B (en) * 2023-01-18 2024-10-01 奈盾科技股份有限公司 Dual-chamber pressure control method and dual-chamber pressure control device

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Also Published As

Publication number Publication date
EP1323179B1 (en) 2013-11-06
US6492774B1 (en) 2002-12-10
JP5100952B2 (en) 2012-12-19
US20020190657A1 (en) 2002-12-19
KR20030051698A (en) 2003-06-25
TW587272B (en) 2004-05-11
CN1479936A (en) 2004-03-03
JP2012178614A (en) 2012-09-13
WO2002029848A3 (en) 2002-10-31
EP1323179A2 (en) 2003-07-02
KR100603682B1 (en) 2006-07-20
WO2002029848A2 (en) 2002-04-11
RU2270492C2 (en) 2006-02-20
US20050051268A1 (en) 2005-03-10
JP2004511096A (en) 2004-04-08
CN1322539C (en) 2007-06-20
US7470627B2 (en) 2008-12-30
US6823815B2 (en) 2004-11-30

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