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AU2001283233A1 - High density mram cell array - Google Patents

High density mram cell array

Info

Publication number
AU2001283233A1
AU2001283233A1 AU2001283233A AU8323301A AU2001283233A1 AU 2001283233 A1 AU2001283233 A1 AU 2001283233A1 AU 2001283233 A AU2001283233 A AU 2001283233A AU 8323301 A AU8323301 A AU 8323301A AU 2001283233 A1 AU2001283233 A1 AU 2001283233A1
Authority
AU
Australia
Prior art keywords
high density
cell array
mram cell
density mram
array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001283233A
Inventor
Eugene Chen
Mark Deherrera
Mark Durlam
Gloria Kerszykowski
Kelly W. Kyler
Peter K. Naji
Jon Slaughter
Saied Tehrani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of AU2001283233A1 publication Critical patent/AU2001283233A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
AU2001283233A 2000-08-28 2001-08-09 High density mram cell array Abandoned AU2001283233A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/649,114 2000-08-28
US09/649,114 US6365419B1 (en) 2000-08-28 2000-08-28 High density MRAM cell array
PCT/US2001/025004 WO2002019386A2 (en) 2000-08-28 2001-08-09 High density mram cell array

Publications (1)

Publication Number Publication Date
AU2001283233A1 true AU2001283233A1 (en) 2002-03-13

Family

ID=24603516

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001283233A Abandoned AU2001283233A1 (en) 2000-08-28 2001-08-09 High density mram cell array

Country Status (8)

Country Link
US (1) US6365419B1 (en)
EP (1) EP1316106A2 (en)
JP (1) JP2004508707A (en)
KR (1) KR100785261B1 (en)
CN (1) CN1282239C (en)
AU (1) AU2001283233A1 (en)
TW (1) TW529163B (en)
WO (1) WO2002019386A2 (en)

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US6893893B2 (en) 2002-03-19 2005-05-17 Applied Materials Inc Method of preventing short circuits in magnetic film stacks
US20030181056A1 (en) * 2002-03-22 2003-09-25 Applied Materials, Inc. Method of etching a magnetic material film stack using a hard mask
US6897532B1 (en) * 2002-04-15 2005-05-24 Cypress Semiconductor Corp. Magnetic tunneling junction configuration and a method for making the same
JP2003324187A (en) * 2002-05-01 2003-11-14 Sony Corp Method for manufacturing magnetic memory device and magnetic memory device
US20040026369A1 (en) * 2002-08-12 2004-02-12 Chentsau Ying Method of etching magnetic materials
US6984585B2 (en) * 2002-08-12 2006-01-10 Applied Materials Inc Method for removal of residue from a magneto-resistive random access memory (MRAM) film stack using a sacrificial mask layer
US6964928B2 (en) * 2002-08-29 2005-11-15 Chentsau Ying Method for removing residue from a magneto-resistive random access memory (MRAM) film stack using a dual mask
US6759263B2 (en) 2002-08-29 2004-07-06 Chentsau Ying Method of patterning a layer of magnetic material
US6985384B2 (en) 2002-10-01 2006-01-10 International Business Machines Corporation Spacer integration scheme in MRAM technology
US6743642B2 (en) * 2002-11-06 2004-06-01 International Business Machines Corporation Bilayer CMP process to improve surface roughness of magnetic stack in MRAM technology
US6660568B1 (en) 2002-11-07 2003-12-09 International Business Machines Corporation BiLevel metallization for embedded back end of the line structures
JP3766380B2 (en) * 2002-12-25 2006-04-12 株式会社東芝 Magnetic random access memory and data read method of the magnetic random access memory
US6888743B2 (en) * 2002-12-27 2005-05-03 Freescale Semiconductor, Inc. MRAM architecture
US6909631B2 (en) * 2003-10-02 2005-06-21 Freescale Semiconductor, Inc. MRAM and methods for reading the MRAM
KR100535046B1 (en) * 2002-12-30 2005-12-07 주식회사 하이닉스반도체 A method for manufacturing of a Magnetic random access memory
US7199055B2 (en) * 2003-03-03 2007-04-03 Cypress Semiconductor Corp. Magnetic memory cell junction and method for forming a magnetic memory cell junction
US6911156B2 (en) * 2003-04-16 2005-06-28 Freescale Semiconductor, Inc. Methods for fabricating MRAM device structures
US6784510B1 (en) * 2003-04-16 2004-08-31 Freescale Semiconductor, Inc. Magnetoresistive random access memory device structures
US6798004B1 (en) * 2003-04-22 2004-09-28 Freescale Semiconductor, Inc. Magnetoresistive random access memory devices and methods for fabricating the same
JP4775616B2 (en) * 2003-05-29 2011-09-21 日本電気株式会社 MRAM and manufacturing method thereof
CN100541819C (en) * 2003-06-24 2009-09-16 国际商业机器公司 Self-aligned conductive lines for magnetic random access memory devices and method of forming same
US7183130B2 (en) * 2003-07-29 2007-02-27 International Business Machines Corporation Magnetic random access memory and method of fabricating thereof
US6947313B2 (en) * 2003-08-27 2005-09-20 Hewlett-Packard Development Company, L.P. Method and apparatus of coupling conductors in magnetic memory
US7602000B2 (en) 2003-11-19 2009-10-13 International Business Machines Corporation Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element
US7071009B2 (en) * 2004-04-01 2006-07-04 Headway Technologies, Inc. MRAM arrays with reduced bit line resistance and method to make the same
US7211446B2 (en) * 2004-06-11 2007-05-01 International Business Machines Corporation Method of patterning a magnetic tunnel junction stack for a magneto-resistive random access memory
US7374952B2 (en) * 2004-06-17 2008-05-20 Infineon Technologies Ag Methods of patterning a magnetic stack of a magnetic memory cell and structures thereof
US7368299B2 (en) * 2004-07-14 2008-05-06 Infineon Technologies Ag MTJ patterning using free layer wet etching and lift off techniques
TWI266413B (en) * 2004-11-09 2006-11-11 Ind Tech Res Inst Magnetic random access memory with lower bit line current and manufacture method thereof
US20060102197A1 (en) * 2004-11-16 2006-05-18 Kang-Lie Chiang Post-etch treatment to remove residues
US7105903B2 (en) 2004-11-18 2006-09-12 Freescale Semiconductor, Inc. Methods and structures for electrical communication with an overlying electrode for a semiconductor element
KR100719345B1 (en) * 2005-04-18 2007-05-17 삼성전자주식회사 How to form a magnetic memory device
US7375002B2 (en) * 2005-06-28 2008-05-20 Freescale Semiconductor, Inc. MIM capacitor in a semiconductor device and method therefor
US7257019B2 (en) * 2005-11-17 2007-08-14 Macronix International Co., Ltd. Systems and methods for a magnetic memory device that includes a single word line transistor
US8084835B2 (en) * 2006-10-20 2011-12-27 Avalanche Technology, Inc. Non-uniform switching based non-volatile magnetic based memory
US8058696B2 (en) * 2006-02-25 2011-11-15 Avalanche Technology, Inc. High capacity low cost multi-state magnetic memory
US8363457B2 (en) * 2006-02-25 2013-01-29 Avalanche Technology, Inc. Magnetic memory sensing circuit
US8018011B2 (en) * 2007-02-12 2011-09-13 Avalanche Technology, Inc. Low cost multi-state magnetic memory
US7732881B2 (en) * 2006-11-01 2010-06-08 Avalanche Technology, Inc. Current-confined effect of magnetic nano-current-channel (NCC) for magnetic random access memory (MRAM)
US8508984B2 (en) * 2006-02-25 2013-08-13 Avalanche Technology, Inc. Low resistance high-TMR magnetic tunnel junction and process for fabrication thereof
US8535952B2 (en) * 2006-02-25 2013-09-17 Avalanche Technology, Inc. Method for manufacturing non-volatile magnetic memory
US20080246104A1 (en) * 2007-02-12 2008-10-09 Yadav Technology High Capacity Low Cost Multi-State Magnetic Memory
US8183652B2 (en) 2007-02-12 2012-05-22 Avalanche Technology, Inc. Non-volatile magnetic memory with low switching current and high thermal stability
US20070253245A1 (en) * 2006-04-27 2007-11-01 Yadav Technology High Capacity Low Cost Multi-Stacked Cross-Line Magnetic Memory
US8063459B2 (en) * 2007-02-12 2011-11-22 Avalanche Technologies, Inc. Non-volatile magnetic memory element with graded layer
US7445943B2 (en) * 2006-10-19 2008-11-04 Everspin Technologies, Inc. Magnetic tunnel junction memory and method with etch-stop layer
US8802451B2 (en) 2008-02-29 2014-08-12 Avalanche Technology Inc. Method for manufacturing high density non-volatile magnetic memory
JP5288933B2 (en) * 2008-08-08 2013-09-11 株式会社東芝 Semiconductor memory device and manufacturing method thereof
KR101019893B1 (en) * 2008-12-23 2011-03-04 주식회사 하이닉스반도체 Magnetoresistive memory cell using floating body effect, memory device including same and method of operating same
US8208290B2 (en) * 2009-08-26 2012-06-26 Qualcomm Incorporated System and method to manufacture magnetic random access memory
CN102403451B (en) * 2010-09-17 2014-11-26 中芯国际集成电路制造(北京)有限公司 Process for manufacturing magnetic tunnel junction of magnetic random access memory
EP2652791B1 (en) * 2010-12-17 2017-03-01 Everspin Technologies, Inc. Magnetic random access memory integration having improved scaling
US8790935B1 (en) * 2012-10-22 2014-07-29 Everspin Technologies, Inc. Method of manufacturing a magnetoresistive-based device with via integration
US20140210021A1 (en) * 2013-01-25 2014-07-31 Qualcomm Incorporated Method and apparatus for ameliorating peripheral edge damage in magnetoresistive tunnel junction (mtj) device ferromagnetic layers
US20160254318A1 (en) * 2015-02-27 2016-09-01 Qualcomm Incorporated MAGNETIC RANDOM ACCESS MEMORY (MRAM) BIT CELLS EMPLOYING SOURCE LINES (SLs) AND/OR BIT LINES (BLs) DISPOSED IN MULTIPLE, STACKED METAL LAYERS TO REDUCE MRAM BIT CELL RESISTANCE
US9842986B2 (en) * 2015-12-15 2017-12-12 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method of forming the same
US10290679B1 (en) 2018-03-09 2019-05-14 Globalfoundries Singapore Pte. Ltd. High-Density STT-MRAM with 3D arrays of MTJs in multiple levels of interconnects and method for producing the same
EP3800642A4 (en) * 2018-06-14 2021-06-23 Huawei Technologies Co., Ltd. STORAGE
US11361987B2 (en) 2020-05-14 2022-06-14 International Business Machines Corporation Forming decoupled interconnects
US11876047B2 (en) 2021-09-14 2024-01-16 International Business Machines Corporation Decoupled interconnect structures

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US5861328A (en) * 1996-10-07 1999-01-19 Motorola, Inc. Method of fabricating GMR devices
US5804458A (en) * 1996-12-16 1998-09-08 Motorola, Inc. Method of fabricating spaced apart submicron magnetic memory cells
DE59904972D1 (en) * 1998-07-15 2003-05-15 Infineon Technologies Ag STORAGE CELL ARRANGEMENT IN WHICH AN ELECTRICAL RESISTANCE OF A STORAGE ELEMENT PROVIDES INFORMATION AND IS INFLUENCABLE BY A MAGNETIC FIELD, AND METHOD FOR THE PRODUCTION THEREOF
US6097625A (en) * 1998-07-16 2000-08-01 International Business Machines Corporation Magnetic random access memory (MRAM) array with magnetic tunnel junction (MTJ) cells and remote diodes
US5940319A (en) * 1998-08-31 1999-08-17 Motorola, Inc. Magnetic random access memory and fabricating method thereof
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JP2002141481A (en) * 2000-11-01 2002-05-17 Canon Inc Ferromagnetic material memory and operation method thereof
JP2002170374A (en) * 2000-11-28 2002-06-14 Canon Inc Ferromagnetic non-volatile storage element, its information reproducing method, memory chip using it, and portable information processing device

Also Published As

Publication number Publication date
EP1316106A2 (en) 2003-06-04
CN1282239C (en) 2006-10-25
TW529163B (en) 2003-04-21
CN1505837A (en) 2004-06-16
KR100785261B1 (en) 2007-12-13
US6365419B1 (en) 2002-04-02
KR20030064394A (en) 2003-07-31
JP2004508707A (en) 2004-03-18
WO2002019386A2 (en) 2002-03-07
WO2002019386A3 (en) 2003-01-23

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