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AU2001281104A1 - Antimony-based heterostructure varactor diode with bandgap engineered quantum well electrodes - Google Patents

Antimony-based heterostructure varactor diode with bandgap engineered quantum well electrodes

Info

Publication number
AU2001281104A1
AU2001281104A1 AU2001281104A AU8110401A AU2001281104A1 AU 2001281104 A1 AU2001281104 A1 AU 2001281104A1 AU 2001281104 A AU2001281104 A AU 2001281104A AU 8110401 A AU8110401 A AU 8110401A AU 2001281104 A1 AU2001281104 A1 AU 2001281104A1
Authority
AU
Australia
Prior art keywords
antimony
quantum well
varactor diode
based heterostructure
bandgap engineered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001281104A
Inventor
Mehran Matloubian
Chanh Nguyen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HRL Laboratories LLC
Original Assignee
HRL Laboratories LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HRL Laboratories LLC filed Critical HRL Laboratories LLC
Publication of AU2001281104A1 publication Critical patent/AU2001281104A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/64—Variable-capacitance diodes, e.g. varactors 
AU2001281104A 2000-08-03 2001-08-03 Antimony-based heterostructure varactor diode with bandgap engineered quantum well electrodes Abandoned AU2001281104A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09632272 2000-08-03
US09/632,272 US6673265B1 (en) 2000-08-03 2000-08-03 Antimony-based heterostructure varactor diode with bandgap engineered quantum well electrodes
PCT/US2001/024605 WO2002013272A2 (en) 2000-08-03 2001-08-03 Antimony-based heterostructure varactor diode with bandgap engineered quantum well electrodes

Publications (1)

Publication Number Publication Date
AU2001281104A1 true AU2001281104A1 (en) 2002-02-18

Family

ID=24534829

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001281104A Abandoned AU2001281104A1 (en) 2000-08-03 2001-08-03 Antimony-based heterostructure varactor diode with bandgap engineered quantum well electrodes

Country Status (5)

Country Link
US (1) US6673265B1 (en)
EP (1) EP1305832A2 (en)
JP (1) JP2004519839A (en)
AU (1) AU2001281104A1 (en)
WO (1) WO2002013272A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7696604B2 (en) * 2007-10-23 2010-04-13 International Business Machines Corporation Silicon germanium heterostructure barrier varactor

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4142924A (en) 1976-12-16 1979-03-06 Massachusetts Institute Of Technology Fast-sweep growth method for growing layers using liquid phase epitaxy
US4504329A (en) 1983-10-06 1985-03-12 The United States Of America As Represented By The Secretary Of The Air Force Process for the epitaxial deposition of III-V compounds utilizing a binary alloy as the metallic source
US5113231A (en) * 1989-09-07 1992-05-12 California Institute Of Technology Quantum-effect semiconductor devices
US5145809A (en) * 1990-12-04 1992-09-08 Millitech Corporation Fabrication of gunn diode semiconductor devices
US5278444A (en) * 1992-02-26 1994-01-11 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Planar varactor frequency multiplier devices with blocking barrier
US5302838A (en) 1992-06-09 1994-04-12 University Of Cincinnati Multi-quantum well injection mode device
DE4219523A1 (en) * 1992-06-15 1993-12-16 Daimler Benz Ag Monolithically integrated millimeter wave circuit and method for its production
US5408107A (en) * 1993-05-20 1995-04-18 The Board Of Regents Of The University Of Texas System Semiconductor device apparatus having multiple current-voltage curves and zero-bias memory
EP0970518B1 (en) * 1997-03-18 2012-04-25 Infineon Technologies AG Trench-isolated bipolar devices

Also Published As

Publication number Publication date
WO2002013272A2 (en) 2002-02-14
EP1305832A2 (en) 2003-05-02
US6673265B1 (en) 2004-01-06
WO2002013272A3 (en) 2002-04-25
JP2004519839A (en) 2004-07-02

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