AU2001267890A1 - N-type nitride semiconductor laminate and semiconductor device using same - Google Patents
N-type nitride semiconductor laminate and semiconductor device using sameInfo
- Publication number
- AU2001267890A1 AU2001267890A1 AU2001267890A AU6789001A AU2001267890A1 AU 2001267890 A1 AU2001267890 A1 AU 2001267890A1 AU 2001267890 A AU2001267890 A AU 2001267890A AU 6789001 A AU6789001 A AU 6789001A AU 2001267890 A1 AU2001267890 A1 AU 2001267890A1
- Authority
- AU
- Australia
- Prior art keywords
- same
- type nitride
- semiconductor device
- laminate
- nitride semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000004065 semiconductor Substances 0.000 title 2
- 150000004767 nitrides Chemical class 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
- H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000201341 | 2000-07-03 | ||
| JP2000-201341 | 2001-02-02 | ||
| JP2001027070 | 2001-02-02 | ||
| JP2001-27070 | 2001-02-02 | ||
| JP2001-155577 | 2001-05-24 | ||
| JP2001155577A JP5145617B2 (en) | 2000-07-03 | 2001-05-24 | N-type nitride semiconductor laminate and semiconductor device using the same |
| PCT/JP2001/005690 WO2002003474A2 (en) | 2000-07-03 | 2001-07-02 | N-type nitride semiconductor laminate and semiconductor device using same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU2001267890A1 true AU2001267890A1 (en) | 2002-01-14 |
Family
ID=27343953
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU2001267890A Abandoned AU2001267890A1 (en) | 2000-07-03 | 2001-07-02 | N-type nitride semiconductor laminate and semiconductor device using same |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20030205711A1 (en) |
| JP (1) | JP5145617B2 (en) |
| AU (1) | AU2001267890A1 (en) |
| MY (1) | MY143405A (en) |
| TW (1) | TW511300B (en) |
| WO (1) | WO2002003474A2 (en) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6849472B2 (en) | 1997-09-30 | 2005-02-01 | Lumileds Lighting U.S., Llc | Nitride semiconductor device with reduced polarization fields |
| JP3955367B2 (en) | 1997-09-30 | 2007-08-08 | フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー | Optical semiconductor device and manufacturing method thereof |
| KR101034055B1 (en) | 2003-07-18 | 2011-05-12 | 엘지이노텍 주식회사 | Light emitting diodes and manufacturing method |
| JP4583060B2 (en) * | 2004-03-26 | 2010-11-17 | 京セラ株式会社 | Method for manufacturing single crystal sapphire substrate and method for manufacturing nitride semiconductor light emitting device |
| KR100678854B1 (en) * | 2004-04-13 | 2007-02-05 | 엘지이노텍 주식회사 | Light emitting diodes and manufacturing method |
| JP5082210B2 (en) * | 2004-07-30 | 2012-11-28 | 住友化学株式会社 | Nitride-based compound semiconductor and manufacturing method thereof |
| US20060267043A1 (en) * | 2005-05-27 | 2006-11-30 | Emerson David T | Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices |
| JP2006339550A (en) * | 2005-06-06 | 2006-12-14 | Sony Corp | Semiconductor element and manufacturing method thereof, and semiconductor device and manufacturing method thereof |
| JP4853198B2 (en) * | 2005-12-02 | 2012-01-11 | 豊田合成株式会社 | Group III nitride compound semiconductor light emitting device |
| JP2008227103A (en) * | 2007-03-12 | 2008-09-25 | Rohm Co Ltd | GaN-BASED SEMICONDUCTOR LIGHT EMITTING ELEMENT |
| CN101494262B (en) * | 2008-01-23 | 2013-11-06 | 晶元光电股份有限公司 | Structure of Light Emitting Diodes |
| JP2008252124A (en) * | 2008-06-27 | 2008-10-16 | Sumitomo Electric Ind Ltd | Nitride semiconductor device |
| JP2010123920A (en) * | 2008-10-20 | 2010-06-03 | Sumitomo Electric Ind Ltd | Method for manufacturing nitride semiconductor light emitting element, and method for manufacturing epitaxial wafer |
| JP5633154B2 (en) * | 2010-02-18 | 2014-12-03 | 豊田合成株式会社 | Semiconductor light emitting device manufacturing method, semiconductor light emitting device, lamp, electronic device, and mechanical device |
| JP5388967B2 (en) * | 2010-08-09 | 2014-01-15 | 株式会社東芝 | Semiconductor light emitting device |
| JP2013183126A (en) * | 2012-03-05 | 2013-09-12 | Sharp Corp | Nitride semiconductor light-emitting element and method of manufacturing nitride semiconductor light-emitting element |
| WO2014057748A1 (en) * | 2012-10-12 | 2014-04-17 | 住友電気工業株式会社 | Group iii nitride composite substrate, manufacturing method therefor, and group iii nitride semiconductor device manufacturing method |
| JP2013219386A (en) * | 2013-06-24 | 2013-10-24 | Toshiba Corp | Semiconductor light-emitting element |
| JP6124740B2 (en) * | 2013-08-30 | 2017-05-10 | シャープ株式会社 | Nitride semiconductor light emitting device manufacturing method, nitride semiconductor light emitting device, and base substrate for nitride semiconductor light emitting device |
| JP5996499B2 (en) * | 2013-09-02 | 2016-09-21 | 株式会社東芝 | Semiconductor light emitting device and method for manufacturing semiconductor light emitting device |
| CN106663718B (en) | 2014-05-27 | 2019-10-01 | 斯兰纳Uv科技有限公司 | Electrooptical device |
| WO2015181656A1 (en) | 2014-05-27 | 2015-12-03 | The Silanna Group Pty Limited | Electronic devices comprising n-type and p-type superlattices |
| CN106537617B (en) | 2014-05-27 | 2019-04-16 | 斯兰纳Uv科技有限公司 | Use the advanced electronics structure of semiconductor structure and superlattices |
| US11322643B2 (en) | 2014-05-27 | 2022-05-03 | Silanna UV Technologies Pte Ltd | Optoelectronic device |
| GB2586862B (en) * | 2019-09-06 | 2021-12-15 | Plessey Semiconductors Ltd | LED precursor incorporating strain relaxing structure |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3448450B2 (en) * | 1996-04-26 | 2003-09-22 | 三洋電機株式会社 | Light emitting device and method for manufacturing the same |
| JP3778609B2 (en) * | 1996-04-26 | 2006-05-24 | 三洋電機株式会社 | Manufacturing method of semiconductor device |
| JP3374737B2 (en) * | 1997-01-09 | 2003-02-10 | 日亜化学工業株式会社 | Nitride semiconductor device |
| JPH10215035A (en) * | 1997-01-30 | 1998-08-11 | Toshiba Corp | Compound semiconductor element and manufacture thereof |
| JP3744211B2 (en) * | 1997-09-01 | 2006-02-08 | 日亜化学工業株式会社 | Nitride semiconductor device |
| JP3647236B2 (en) * | 1997-12-22 | 2005-05-11 | 日亜化学工業株式会社 | Nitride semiconductor laser device |
| US7193246B1 (en) * | 1998-03-12 | 2007-03-20 | Nichia Corporation | Nitride semiconductor device |
| JP3622562B2 (en) * | 1998-03-12 | 2005-02-23 | 日亜化学工業株式会社 | Nitride semiconductor light emitting diode |
| JP4166885B2 (en) * | 1998-05-18 | 2008-10-15 | 富士通株式会社 | Optical semiconductor device and manufacturing method thereof |
-
2001
- 2001-05-24 JP JP2001155577A patent/JP5145617B2/en not_active Expired - Fee Related
- 2001-07-02 AU AU2001267890A patent/AU2001267890A1/en not_active Abandoned
- 2001-07-02 US US10/312,848 patent/US20030205711A1/en not_active Abandoned
- 2001-07-02 WO PCT/JP2001/005690 patent/WO2002003474A2/en active Application Filing
- 2001-07-03 TW TW090116263A patent/TW511300B/en not_active IP Right Cessation
- 2001-07-03 MY MYPI20013165A patent/MY143405A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| TW511300B (en) | 2002-11-21 |
| US20030205711A1 (en) | 2003-11-06 |
| MY143405A (en) | 2011-05-13 |
| WO2002003474A2 (en) | 2002-01-10 |
| JP5145617B2 (en) | 2013-02-20 |
| WO2002003474A3 (en) | 2002-06-27 |
| JP2002305323A (en) | 2002-10-18 |
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