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AU2001265739A1 - Power semiconductor component and method for producing the same - Google Patents

Power semiconductor component and method for producing the same

Info

Publication number
AU2001265739A1
AU2001265739A1 AU2001265739A AU6573901A AU2001265739A1 AU 2001265739 A1 AU2001265739 A1 AU 2001265739A1 AU 2001265739 A AU2001265739 A AU 2001265739A AU 6573901 A AU6573901 A AU 6573901A AU 2001265739 A1 AU2001265739 A1 AU 2001265739A1
Authority
AU
Australia
Prior art keywords
producing
same
power semiconductor
semiconductor component
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001265739A
Inventor
Stefan Linder
Hans Rudolf Zeller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ABB Schweiz AG
Original Assignee
ABB Schweiz AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ABB Schweiz AG filed Critical ABB Schweiz AG
Publication of AU2001265739A1 publication Critical patent/AU2001265739A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
AU2001265739A 2000-07-04 2001-07-04 Power semiconductor component and method for producing the same Abandoned AU2001265739A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10031781 2000-07-04
DE10031781A DE10031781A1 (en) 2000-07-04 2000-07-04 Semiconductor component and method for its production
PCT/CH2001/000416 WO2002003469A1 (en) 2000-07-04 2001-07-04 Power semiconductor component and method for producing the same

Publications (1)

Publication Number Publication Date
AU2001265739A1 true AU2001265739A1 (en) 2002-01-14

Family

ID=7647273

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001265739A Abandoned AU2001265739A1 (en) 2000-07-04 2001-07-04 Power semiconductor component and method for producing the same

Country Status (9)

Country Link
US (1) US6825110B2 (en)
EP (1) EP1297575B1 (en)
JP (1) JP4916083B2 (en)
CN (1) CN1252828C (en)
AU (1) AU2001265739A1 (en)
CZ (1) CZ20024253A3 (en)
DE (1) DE10031781A1 (en)
RU (1) RU2274929C2 (en)
WO (1) WO2002003469A1 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10245091B4 (en) * 2002-09-27 2004-09-16 Infineon Technologies Ag Method of manufacturing a thin semiconductor device structure
DE10325721B4 (en) * 2003-06-06 2009-02-05 Infineon Technologies Ag Semiconductor device
DE102005049506B4 (en) * 2005-10-13 2011-06-09 Infineon Technologies Austria Ag Vertical semiconductor device
US7645659B2 (en) * 2005-11-30 2010-01-12 Fairchild Korea Semiconductor, Ltd. Power semiconductor device using silicon substrate as field stop layer and method of manufacturing the same
JP2008042013A (en) * 2006-08-08 2008-02-21 Sanyo Electric Co Ltd Manufacturing method of semiconductor device
KR101779224B1 (en) 2009-11-10 2017-09-18 에이비비 슈바이쯔 아게 Punch-through semiconductor device and method for producing same
CN103151251B (en) * 2011-12-07 2016-06-01 无锡华润华晶微电子有限公司 Trench-type insulated gate bipolar transistor and preparation method thereof
US20130277793A1 (en) 2012-04-24 2013-10-24 Fairchild Korea Semiconductor, Ltd. Power device and fabricating method thereof
US10181513B2 (en) 2012-04-24 2019-01-15 Semiconductor Components Industries, Llc Power device configured to reduce electromagnetic interference (EMI) noise
US9685335B2 (en) 2012-04-24 2017-06-20 Fairchild Korea Semiconductor Ltd. Power device including a field stop layer
US9111898B2 (en) * 2013-02-19 2015-08-18 Taiwan Semiconductor Manufacturing Company. Ltd. Multiple layer substrate
US9768285B1 (en) * 2016-03-16 2017-09-19 Semiconductor Components Industries, Llc Semiconductor device and method of manufacture
CN115855741B (en) * 2023-02-28 2023-11-03 浙江大学杭州国际科创中心 Method and apparatus for evaluating areal density of doping

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60145660A (en) 1984-01-09 1985-08-01 Mitsubishi Electric Corp Manufacturing method of semiconductor device
US5528058A (en) * 1986-03-21 1996-06-18 Advanced Power Technology, Inc. IGBT device with platinum lifetime control and reduced gaw
JP2918399B2 (en) * 1992-08-05 1999-07-12 三菱電機株式会社 Semiconductor device and manufacturing method thereof
DE4313170A1 (en) * 1993-04-22 1994-10-27 Abb Management Ag Power semiconductor component
EP0670603B1 (en) * 1994-02-18 1999-01-13 Hitachi, Ltd. Semiconductor device comprising at least one IGBT and a diode
JP3113156B2 (en) 1994-08-31 2000-11-27 信越半導体株式会社 Semiconductor substrate manufacturing method
DE4431294A1 (en) * 1994-09-02 1996-03-07 Abb Management Ag Switchable thyristor for high blocking voltages and small component thickness
JP3488772B2 (en) * 1996-01-16 2004-01-19 三菱電機株式会社 Semiconductor device
DE19651108C2 (en) * 1996-04-11 2000-11-23 Mitsubishi Electric Corp High breakdown voltage gate trench type semiconductor device and its manufacturing method
DE19640307C2 (en) * 1996-09-30 2000-10-12 Siemens Ag Semiconductor component controllable by field effect
JPH10178174A (en) * 1996-10-18 1998-06-30 Hitachi Ltd Semiconductor device and power conversion device using the same
DE19731495C2 (en) * 1997-07-22 1999-05-20 Siemens Ag Bipolar transistor controllable by field effect and method for its production
JP3523056B2 (en) * 1998-03-23 2004-04-26 株式会社東芝 Semiconductor device
DE19829614B4 (en) * 1998-07-02 2004-09-23 Semikron Elektronik Gmbh Method for producing a power semiconductor component
EP1052699A1 (en) * 1998-11-26 2000-11-15 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and fabrication method therefor
DE19860581A1 (en) 1998-12-29 2000-07-06 Asea Brown Boveri Semiconductor device and manufacturing method
JP4031209B2 (en) * 2000-03-14 2008-01-09 株式会社東芝 Semiconductor device

Also Published As

Publication number Publication date
JP2004503090A (en) 2004-01-29
US6825110B2 (en) 2004-11-30
CZ20024253A3 (en) 2003-05-14
JP4916083B2 (en) 2012-04-11
EP1297575B1 (en) 2012-03-28
EP1297575A1 (en) 2003-04-02
CN1440571A (en) 2003-09-03
WO2002003469A1 (en) 2002-01-10
DE10031781A1 (en) 2002-01-17
CN1252828C (en) 2006-04-19
US20030143836A1 (en) 2003-07-31
RU2274929C2 (en) 2006-04-20

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