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AU2001243197A1 - High power mid wavelength infrared laser - Google Patents

High power mid wavelength infrared laser

Info

Publication number
AU2001243197A1
AU2001243197A1 AU2001243197A AU4319701A AU2001243197A1 AU 2001243197 A1 AU2001243197 A1 AU 2001243197A1 AU 2001243197 A AU2001243197 A AU 2001243197A AU 4319701 A AU4319701 A AU 4319701A AU 2001243197 A1 AU2001243197 A1 AU 2001243197A1
Authority
AU
Australia
Prior art keywords
high power
infrared laser
wavelength infrared
mid wavelength
power mid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001243197A
Inventor
Manijeh Razeghi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MP Technologies LLC
Original Assignee
MP Technologies LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by MP Technologies LLC filed Critical MP Technologies LLC
Publication of AU2001243197A1 publication Critical patent/AU2001243197A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3213—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities asymmetric clading layers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
AU2001243197A 2000-07-17 2001-02-20 High power mid wavelength infrared laser Abandoned AU2001243197A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09617864 2000-07-17
US09/617,864 US6577659B1 (en) 2000-07-17 2000-07-17 Semiconductor laser diode
PCT/US2001/005390 WO2002007224A1 (en) 2000-07-17 2001-02-20 High power mid wavelength infrared laser

Publications (1)

Publication Number Publication Date
AU2001243197A1 true AU2001243197A1 (en) 2002-01-30

Family

ID=24475357

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001243197A Abandoned AU2001243197A1 (en) 2000-07-17 2001-02-20 High power mid wavelength infrared laser

Country Status (3)

Country Link
US (1) US6577659B1 (en)
AU (1) AU2001243197A1 (en)
WO (1) WO2002007224A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040223529A1 (en) * 2003-05-08 2004-11-11 Maxion Technologies, Inc. Semiconductor laser cladding layers
AU2010275863A1 (en) * 2009-07-23 2012-02-09 Commissariat A L'energie Atomique An electrically driven single photon source
JP6938568B2 (en) * 2019-06-21 2021-09-22 Ｄｏｗａエレクトロニクス株式会社 Manufacturing method of semiconductor optical device and semiconductor optical device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5650635A (en) 1995-07-14 1997-07-22 Northwestern University Multiple stacked Sb-based heterostructures
US5658825A (en) 1996-09-20 1997-08-19 Northwestern University Method of making an InAsSb/InAsSbP diode lasers
US5995529A (en) * 1997-04-10 1999-11-30 Sandia Corporation Infrared light sources with semimetal electron injection
US5807765A (en) 1997-06-06 1998-09-15 Northwestern University Processing of Sb-based lasers
US6146608A (en) * 1997-11-24 2000-11-14 Advanced Technology Materials, Inc. Stable hydride source compositions for manufacture of semiconductor devices and structures

Also Published As

Publication number Publication date
US6577659B1 (en) 2003-06-10
WO2002007224A1 (en) 2002-01-24

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