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AU2001238706A1 - Photoacid generators and photoresists comprising same - Google Patents

Photoacid generators and photoresists comprising same

Info

Publication number
AU2001238706A1
AU2001238706A1 AU2001238706A AU3870601A AU2001238706A1 AU 2001238706 A1 AU2001238706 A1 AU 2001238706A1 AU 2001238706 A AU2001238706 A AU 2001238706A AU 3870601 A AU3870601 A AU 3870601A AU 2001238706 A1 AU2001238706 A1 AU 2001238706A1
Authority
AU
Australia
Prior art keywords
photoresists
same
photoacid generators
photoacid
generators
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001238706A
Inventor
James F Cameron
Gerhard Pohlers
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials International LLC
Original Assignee
Shipley Co LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shipley Co LLC filed Critical Shipley Co LLC
Publication of AU2001238706A1 publication Critical patent/AU2001238706A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Polymerisation Methods In General (AREA)
AU2001238706A 2000-02-27 2001-02-27 Photoacid generators and photoresists comprising same Abandoned AU2001238706A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US18571700P 2000-02-27 2000-02-27
US60/185,717 2000-02-27
PCT/US2001/006284 WO2001063363A2 (en) 2000-02-27 2001-02-27 Photoacid generators and photoresists comprising same

Publications (1)

Publication Number Publication Date
AU2001238706A1 true AU2001238706A1 (en) 2001-09-03

Family

ID=22682185

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001238706A Abandoned AU2001238706A1 (en) 2000-02-27 2001-02-27 Photoacid generators and photoresists comprising same

Country Status (4)

Country Link
US (1) US6783912B2 (en)
JP (1) JP4991074B2 (en)
AU (1) AU2001238706A1 (en)
WO (1) WO2001063363A2 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1662321A1 (en) * 2004-11-24 2006-05-31 Rohm and Haas Electronic Materials, L.L.C. Photoresist compositions
KR100676885B1 (en) * 2004-12-02 2007-02-23 주식회사 하이닉스반도체 Upper antireflection film polymer, preparation method thereof and upper antireflection film composition containing same
KR100574495B1 (en) * 2004-12-15 2006-04-27 주식회사 하이닉스반도체 Photoacid generator polymer, preparation method thereof, and upper anti-reflective coating composition containing same
JP4979621B2 (en) * 2008-03-12 2012-07-18 株式会社トクヤマ Sulfur-containing polymerizable adamantane compound
EP2267532B1 (en) 2009-06-22 2015-08-19 Rohm and Haas Electronic Materials, L.L.C. Photoacid generators and photoresists comprising same
JP5851688B2 (en) 2009-12-31 2016-02-03 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ Photosensitive composition
EP2539316B1 (en) 2010-02-24 2019-10-23 Basf Se Latent acids and their use
JP5782283B2 (en) 2010-03-31 2015-09-24 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ Novel polymer and photoresist compositions
KR102537349B1 (en) 2015-02-02 2023-05-26 바스프 에스이 Potential Acids and Their Uses
WO2020048957A1 (en) 2018-09-05 2020-03-12 Merck Patent Gmbh Positive working photosensitive material

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GB1231789A (en) * 1967-09-05 1971-05-12
DE3804316A1 (en) * 1988-02-12 1989-08-24 Merck Patent Gmbh METHOD FOR PRODUCING 1,2-DISULPHONE CONNECTIONS
JPH02106751A (en) 1988-10-14 1990-04-18 Matsushita Electric Ind Co Ltd Pattern forming material
DE3930086A1 (en) * 1989-09-09 1991-03-21 Hoechst Ag POSITIVELY WORKING RADIATION-SENSITIVE MIXTURE AND PRODUCTION OF RADIATION-SENSITIVE RECORDING MATERIAL THEREOF
JP2500533B2 (en) * 1990-01-30 1996-05-29 和光純薬工業株式会社 Novel diazodisulfone compound
JPH03223863A (en) * 1990-01-30 1991-10-02 Wako Pure Chem Ind Ltd Resist material
EP0440374B1 (en) * 1990-01-30 1997-04-16 Wako Pure Chemical Industries Ltd Chemical amplified resist material
JP3024621B2 (en) * 1990-01-30 2000-03-21 和光純薬工業株式会社 Acid generator for resist material
JP3392546B2 (en) * 1994-11-16 2003-03-31 株式会社東芝 Pattern formation method
US5585220A (en) * 1995-12-01 1996-12-17 International Business Machines Corporation Resist composition with radiation sensitive acid generator
DE69612182T3 (en) * 1996-02-09 2005-08-04 Wako Pure Chemical Industries, Ltd. Polymer and resist material
JP3677952B2 (en) * 1996-07-18 2005-08-03 Ｊｓｒ株式会社 Radiation sensitive resin composition
JP3854689B2 (en) * 1997-07-24 2006-12-06 東京応化工業株式会社 Novel photoacid generator
JP3919887B2 (en) * 1996-07-24 2007-05-30 東京応化工業株式会社 Chemically amplified positive resist composition
US5945517A (en) 1996-07-24 1999-08-31 Tokyo Ohka Kogyo Co., Ltd. Chemical-sensitization photoresist composition
JP3865473B2 (en) * 1997-07-24 2007-01-10 東京応化工業株式会社 New diazomethane compounds
JP3816638B2 (en) * 1996-07-24 2006-08-30 東京応化工業株式会社 Chemically amplified resist composition
JPH10171112A (en) * 1996-12-11 1998-06-26 Mitsubishi Chem Corp Positive photosensitive composition
JP4097782B2 (en) * 1997-05-07 2008-06-11 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． Radiation sensitive composition
JP3966430B2 (en) * 1997-07-15 2007-08-29 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． Radiation sensitive composition
US6136502A (en) * 1997-10-08 2000-10-24 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
US6057083A (en) * 1997-11-04 2000-05-02 Shipley Company, L.L.C. Polymers and photoresist compositions
JP3998105B2 (en) * 1998-02-04 2007-10-24 東京応化工業株式会社 Chemically amplified negative resist composition and pattern forming method using the same
JP4062713B2 (en) 1998-03-02 2008-03-19 Ｊｓｒ株式会社 Positive radiation sensitive resin composition
JPH11352693A (en) * 1998-06-08 1999-12-24 Nippon Zeon Co Ltd Resist composition and method for forming resist pattern
JP3972469B2 (en) * 1998-06-12 2007-09-05 Ｊｓｒ株式会社 Diazodisulfone compound and radiation-sensitive resin composition
JP2000171967A (en) * 1998-09-28 2000-06-23 Mitsubishi Chemicals Corp Radiation-sensitive composition
JP2001042530A (en) * 1999-07-12 2001-02-16 Shipley Co Llc Positive radiation-sensitive resin composition
JP3969909B2 (en) * 1999-09-27 2007-09-05 富士フイルム株式会社 Positive photoresist composition
JP4247592B2 (en) * 2000-07-13 2009-04-02 信越化学工業株式会社 Resist material and pattern forming method

Also Published As

Publication number Publication date
WO2001063363A3 (en) 2003-03-20
JP4991074B2 (en) 2012-08-01
WO2001063363A2 (en) 2001-08-30
JP2003527355A (en) 2003-09-16
US20020009663A1 (en) 2002-01-24
US6783912B2 (en) 2004-08-31

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