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AU2001236755A1 - Structures and methods for improved capacitor cells - Google Patents

Structures and methods for improved capacitor cells

Info

Publication number
AU2001236755A1
AU2001236755A1 AU2001236755A AU3675501A AU2001236755A1 AU 2001236755 A1 AU2001236755 A1 AU 2001236755A1 AU 2001236755 A AU2001236755 A AU 2001236755A AU 3675501 A AU3675501 A AU 3675501A AU 2001236755 A1 AU2001236755 A1 AU 2001236755A1
Authority
AU
Australia
Prior art keywords
structures
methods
capacitor cells
improved capacitor
improved
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001236755A
Inventor
Vishnu K. Agarwal
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of AU2001236755A1 publication Critical patent/AU2001236755A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
AU2001236755A 2000-02-08 2001-02-07 Structures and methods for improved capacitor cells Abandoned AU2001236755A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/499,726 US6590246B1 (en) 2000-02-08 2000-02-08 Structures and methods for improved capacitor cells in integrated circuits
US09499726 2000-02-08
PCT/US2001/003992 WO2001059850A2 (en) 2000-02-08 2001-02-07 Structures and methods for improved capacitor cells

Publications (1)

Publication Number Publication Date
AU2001236755A1 true AU2001236755A1 (en) 2001-08-20

Family

ID=23986442

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001236755A Abandoned AU2001236755A1 (en) 2000-02-08 2001-02-07 Structures and methods for improved capacitor cells

Country Status (3)

Country Link
US (2) US6590246B1 (en)
AU (1) AU2001236755A1 (en)
WO (1) WO2001059850A2 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6858865B2 (en) * 2001-02-23 2005-02-22 Micron Technology, Inc. Doped aluminum oxide dielectrics
KR20030002863A (en) * 2001-06-30 2003-01-09 주식회사 하이닉스반도체 Ferroelectric memory device over cored pulg and method for fabricating the same
JPWO2003052829A1 (en) * 2001-12-14 2005-04-28 株式会社日立製作所 Semiconductor device and manufacturing method thereof
JP4243214B2 (en) * 2004-04-12 2009-03-25 パナソニック株式会社 Semiconductor integrated circuit device, semiconductor integrated circuit device pattern generation method, semiconductor integrated circuit device manufacturing method, and semiconductor integrated circuit device pattern generation device
US20060273425A1 (en) * 2005-06-06 2006-12-07 Khan Qadeer A High density capacitor structure
US20080137262A1 (en) * 2006-12-12 2008-06-12 Texas Instruments Inc. Methods and systems for capacitors
US8482048B2 (en) * 2009-07-31 2013-07-09 Alpha & Omega Semiconductor, Inc. Metal oxide semiconductor field effect transistor integrating a capacitor
JP6170596B1 (en) * 2016-06-15 2017-07-26 ウィンボンド エレクトロニクス コーポレーション Semiconductor device

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5032545A (en) 1990-10-30 1991-07-16 Micron Technology, Inc. Process for preventing a native oxide from forming on the surface of a semiconductor material and integrated circuit capacitors produced thereby
US5068199A (en) 1991-05-06 1991-11-26 Micron Technology, Inc. Method for anodizing a polysilicon layer lower capacitor plate of a DRAM to increase capacitance
US5142438A (en) 1991-11-15 1992-08-25 Micron Technology, Inc. Dram cell having a stacked capacitor with a tantalum lower plate, a tantalum oxide dielectric layer, and a silicide buried contact
US5335138A (en) 1993-02-12 1994-08-02 Micron Semiconductor, Inc. High dielectric constant capacitor and method of manufacture
JP3319869B2 (en) * 1993-06-24 2002-09-03 三菱電機株式会社 Semiconductor storage device and method of manufacturing the same
US5440173A (en) * 1993-09-17 1995-08-08 Radiant Technologies High-temperature electrical contact for making contact to ceramic materials and improved circuit element using the same
US5972771A (en) 1994-03-11 1999-10-26 Micron Technology, Inc. Enhancing semiconductor structure surface area using HSG and etching
US5504041A (en) 1994-08-01 1996-04-02 Texas Instruments Incorporated Conductive exotic-nitride barrier layer for high-dielectric-constant materials
US5573979A (en) * 1995-02-13 1996-11-12 Texas Instruments Incorporated Sloped storage node for a 3-D dram cell structure
US6207145B1 (en) * 1997-05-09 2001-03-27 Pharma Pacific Pty Ltd. Therapeutic applications of high dose interferon
US5843830A (en) 1996-06-26 1998-12-01 Micron Technology, Inc. Capacitor, and methods for forming a capacitor
US6011284A (en) 1996-12-26 2000-01-04 Sony Corporation Electronic material, its manufacturing method, dielectric capacitor, nonvolatile memory and semiconductor device
US5963814A (en) 1997-10-28 1999-10-05 Micron Technology, Inc. Method of forming recessed container cells by wet etching conductive layer and dissimilar layer formed over conductive layer
US6432793B1 (en) * 1997-12-12 2002-08-13 Micron Technology, Inc. Oxidative conditioning method for metal oxide layer and applications thereof
US6150706A (en) 1998-02-27 2000-11-21 Micron Technology, Inc. Capacitor/antifuse structure having a barrier-layer electrode and improved barrier layer
US6207561B1 (en) * 1998-09-29 2001-03-27 Texas Instruments Incorporated Selective oxidation methods for metal oxide deposition on metals in capacitor fabrication
US6207522B1 (en) 1998-11-23 2001-03-27 Microcoating Technologies Formation of thin film capacitors
KR100324591B1 (en) * 1998-12-24 2002-04-17 박종섭 Method for forming capacitor by using TiAIN layer as diffusion barrier of top electrode

Also Published As

Publication number Publication date
US6590246B1 (en) 2003-07-08
WO2001059850A3 (en) 2002-03-07
US7491602B2 (en) 2009-02-17
WO2001059850A2 (en) 2001-08-16
US20040094787A1 (en) 2004-05-20

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