ATE70665T1 - Verfahren zur herstellung eines fotoleitfaehigen elementes. - Google Patents
Verfahren zur herstellung eines fotoleitfaehigen elementes.Info
- Publication number
- ATE70665T1 ATE70665T1 AT84115397T AT84115397T ATE70665T1 AT E70665 T1 ATE70665 T1 AT E70665T1 AT 84115397 T AT84115397 T AT 84115397T AT 84115397 T AT84115397 T AT 84115397T AT E70665 T1 ATE70665 T1 AT E70665T1
- Authority
- AT
- Austria
- Prior art keywords
- photoconductive
- layer
- members
- substrate
- microwave energy
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 3
- 238000000151 deposition Methods 0.000 abstract 4
- 229910045601 alloy Inorganic materials 0.000 abstract 3
- 239000000956 alloy Substances 0.000 abstract 3
- 230000000903 blocking effect Effects 0.000 abstract 3
- 238000006243 chemical reaction Methods 0.000 abstract 3
- 230000008021 deposition Effects 0.000 abstract 3
- 239000012495 reaction gas Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
- H10F30/15—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
- H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
- H10F77/166—Amorphous semiconductors
- H10F77/1662—Amorphous semiconductors including only Group IV materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Photoreceptors In Electrophotography (AREA)
- Light Receiving Elements (AREA)
- Chemical Vapour Deposition (AREA)
- Discharging, Photosensitive Material Shape In Electrophotography (AREA)
- Measurement Of The Respiration, Hearing Ability, Form, And Blood Characteristics Of Living Organisms (AREA)
- Manufacturing Of Electric Cables (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US58008184A | 1984-02-14 | 1984-02-14 | |
| EP84115397A EP0151754B1 (de) | 1984-02-14 | 1984-12-13 | Verfahren zur Herstellung eines fotoleitfähigen Elementes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE70665T1 true ATE70665T1 (de) | 1992-01-15 |
Family
ID=24319608
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT84115397T ATE70665T1 (de) | 1984-02-14 | 1984-12-13 | Verfahren zur herstellung eines fotoleitfaehigen elementes. |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP0151754B1 (de) |
| JP (1) | JPH07107896B2 (de) |
| AT (1) | ATE70665T1 (de) |
| AU (1) | AU3872885A (de) |
| CA (1) | CA1241617A (de) |
| DE (2) | DE151754T1 (de) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4619729A (en) * | 1984-02-14 | 1986-10-28 | Energy Conversion Devices, Inc. | Microwave method of making semiconductor members |
| EP0192473A3 (de) * | 1985-02-19 | 1988-04-06 | Exxon Research And Engineering Company | Amorpher Photoempfänger mit grosser Empfindlichkeit im langen Wellenlängenbereich |
| CA1271076A (en) * | 1985-08-26 | 1990-07-03 | Stephen J. Hudgens | Enhancement layer for electrophotographic devices and method for decreasing charge fatigue through the use of said layer |
| US4675272A (en) * | 1985-11-01 | 1987-06-23 | Energy Conversion Devices, Inc. | Electrolevelled substrate for electrophotographic photoreceptors and method of fabricating same |
| EP0231531A3 (de) * | 1986-02-03 | 1988-10-05 | Energy Conversion Devices, Inc. | Anpassungsverfahren und -vorrichtung eines Mikrowellen durchlassenden Fensters |
| JPS62220959A (ja) * | 1986-03-20 | 1987-09-29 | Minolta Camera Co Ltd | 感光体 |
| JPS62220961A (ja) * | 1986-03-20 | 1987-09-29 | Minolta Camera Co Ltd | 感光体 |
| EP0238095A1 (de) * | 1986-03-20 | 1987-09-23 | Minolta Camera Kabushiki Kaisha | Lichtempfindliches Element, bestehend aus einer Ladungstransportschicht und einer Ladungserzeugungsschicht |
| EP0241033A1 (de) * | 1986-04-09 | 1987-10-14 | Minolta Camera Kabushiki Kaisha | Lichtempfindliches Element, bestehend aus einer Ladungstransportschicht und einer Ladungserzeugungsschicht |
| US4888521A (en) * | 1986-07-04 | 1989-12-19 | Hitachi Ltd. | Photoconductive device and method of operating the same |
| US5233265A (en) * | 1986-07-04 | 1993-08-03 | Hitachi, Ltd. | Photoconductive imaging apparatus |
| EP0261651A1 (de) * | 1986-09-26 | 1988-03-30 | Minolta Camera Kabushiki Kaisha | Lichtempfindliches Element, das eine Ladungserzeugungsschicht und eine Ladungstransportschicht enthält |
| US4799968A (en) * | 1986-09-26 | 1989-01-24 | Sanyo Electric Co., Ltd. | Photovoltaic device |
| EP0283699B1 (de) * | 1987-03-23 | 1994-06-15 | Hitachi, Ltd. | Photoelektrische Umwandlungsanordnung |
| JP2627323B2 (ja) * | 1988-10-27 | 1997-07-02 | 三洋電機株式会社 | 半導体装置及びその製造方法 |
| JPH02141578A (ja) * | 1988-11-24 | 1990-05-30 | Canon Inc | 堆積膜形成装置 |
| US5256576A (en) * | 1992-02-14 | 1993-10-26 | United Solar Systems Corporation | Method of making pin junction semiconductor device with RF deposited intrinsic buffer layer |
| JP2008115460A (ja) | 2006-10-12 | 2008-05-22 | Canon Inc | 半導体素子の形成方法及び光起電力素子の形成方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2033355B (en) * | 1978-09-07 | 1982-05-06 | Standard Telephones Cables Ltd | Semiconductor processing |
| US4282267A (en) * | 1979-09-20 | 1981-08-04 | Western Electric Co., Inc. | Methods and apparatus for generating plasmas |
| JPS56125881A (en) * | 1980-03-06 | 1981-10-02 | Fuji Photo Film Co Ltd | Optical semiconductor element |
| NL8104139A (nl) * | 1980-09-09 | 1982-04-01 | Energy Conversion Devices Inc | Werkwijze voor het maken van amorfe legeringen met vergrote bandafstand alsmede daaruit gemaakte inrichtingen. |
| US4394425A (en) * | 1980-09-12 | 1983-07-19 | Canon Kabushiki Kaisha | Photoconductive member with α-Si(C) barrier layer |
| US4557987A (en) * | 1980-12-23 | 1985-12-10 | Canon Kabushiki Kaisha | Photoconductive member having barrier layer and amorphous silicon charge generation and charge transport layers |
| DE3200376A1 (de) * | 1981-01-09 | 1982-11-04 | Canon K.K., Tokyo | Fotoleitfaehiges element |
| JPS57177156A (en) * | 1981-04-24 | 1982-10-30 | Canon Inc | Photoconductive material |
| JPS5825226A (ja) * | 1982-07-19 | 1983-02-15 | Shunpei Yamazaki | プラズマ気相反応装置 |
| JPS5918685A (ja) * | 1982-07-21 | 1984-01-31 | Matsushita Electric Ind Co Ltd | 光電変換素子の製造方法 |
-
1984
- 1984-12-13 AT AT84115397T patent/ATE70665T1/de not_active IP Right Cessation
- 1984-12-13 DE DE198484115397T patent/DE151754T1/de active Pending
- 1984-12-13 DE DE8484115397T patent/DE3485373D1/de not_active Expired - Fee Related
- 1984-12-13 EP EP84115397A patent/EP0151754B1/de not_active Expired - Lifetime
-
1985
- 1985-02-14 AU AU38728/85A patent/AU3872885A/en not_active Abandoned
- 1985-02-14 JP JP60028161A patent/JPH07107896B2/ja not_active Expired - Lifetime
- 1985-02-14 CA CA000474286A patent/CA1241617A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE3485373D1 (de) | 1992-01-30 |
| JPH07107896B2 (ja) | 1995-11-15 |
| AU3872885A (en) | 1985-08-22 |
| JPS60189274A (ja) | 1985-09-26 |
| DE151754T1 (de) | 1986-01-16 |
| CA1241617A (en) | 1988-09-06 |
| EP0151754B1 (de) | 1991-12-18 |
| EP0151754A3 (en) | 1987-04-01 |
| EP0151754A2 (de) | 1985-08-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| UEP | Publication of translation of european patent specification | ||
| REN | Ceased due to non-payment of the annual fee |