[go: up one dir, main page]

ATE56105T1 - Ohm'scher mehrschichtkontakt fuer p-typ-halbleiter und verfahren zur herstellung desselben. - Google Patents

Ohm'scher mehrschichtkontakt fuer p-typ-halbleiter und verfahren zur herstellung desselben.

Info

Publication number
ATE56105T1
ATE56105T1 AT85308872T AT85308872T ATE56105T1 AT E56105 T1 ATE56105 T1 AT E56105T1 AT 85308872 T AT85308872 T AT 85308872T AT 85308872 T AT85308872 T AT 85308872T AT E56105 T1 ATE56105 T1 AT E56105T1
Authority
AT
Austria
Prior art keywords
layer
multilayer
making
same
type semiconductors
Prior art date
Application number
AT85308872T
Other languages
English (en)
Inventor
Bulent Mehmet Basol
Original Assignee
Standard Oil Commercial Dev Co
Bp Solar Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Oil Commercial Dev Co, Bp Solar Ltd filed Critical Standard Oil Commercial Dev Co
Application granted granted Critical
Publication of ATE56105T1 publication Critical patent/ATE56105T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H01L21/441—Deposition of conductive or insulating materials for electrodes
    • H01L21/443—Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H01L21/441—Deposition of conductive or insulating materials for electrodes
    • H01L21/445—Deposition of conductive or insulating materials for electrodes from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Led Devices (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
AT85308872T 1984-12-28 1985-12-05 Ohm'scher mehrschichtkontakt fuer p-typ-halbleiter und verfahren zur herstellung desselben. ATE56105T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/687,092 US4680611A (en) 1984-12-28 1984-12-28 Multilayer ohmic contact for p-type semiconductor and method of making same
EP85308872A EP0186350B1 (de) 1984-12-28 1985-12-05 Ohm'scher Mehrschichtkontakt für P-Typ-Halbleiter und Verfahren zur Herstellung desselben

Publications (1)

Publication Number Publication Date
ATE56105T1 true ATE56105T1 (de) 1990-09-15

Family

ID=24759001

Family Applications (1)

Application Number Title Priority Date Filing Date
AT85308872T ATE56105T1 (de) 1984-12-28 1985-12-05 Ohm'scher mehrschichtkontakt fuer p-typ-halbleiter und verfahren zur herstellung desselben.

Country Status (9)

Country Link
US (1) US4680611A (de)
EP (1) EP0186350B1 (de)
JP (1) JPS61222180A (de)
AT (1) ATE56105T1 (de)
AU (2) AU581946B2 (de)
CA (1) CA1236224A (de)
DE (1) DE3579429D1 (de)
ES (1) ES8800785A1 (de)
ZA (1) ZA859821B (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4735662A (en) * 1987-01-06 1988-04-05 The Standard Oil Company Stable ohmic contacts to thin films of p-type tellurium-containing II-VI semiconductors
JP2659714B2 (ja) * 1987-07-21 1997-09-30 株式会社日立製作所 半導体集積回路装置
JPH01111380A (ja) * 1987-10-23 1989-04-28 Sumitomo Metal Ind Ltd 光起電力素子及びその製造方法
US5393675A (en) * 1993-05-10 1995-02-28 The University Of Toledo Process for RF sputtering of cadmium telluride photovoltaic cell
US5557146A (en) * 1993-07-14 1996-09-17 University Of South Florida Ohmic contact using binder paste with semiconductor material dispersed therein
US5909632A (en) * 1997-09-25 1999-06-01 Midwest Research Institute Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films
WO2009110403A1 (ja) * 2008-03-07 2009-09-11 国立大学法人東北大学 光電変換素子構造及び太陽電池
US8524524B2 (en) * 2010-04-22 2013-09-03 General Electric Company Methods for forming back contact electrodes for cadmium telluride photovoltaic cells
US20110272010A1 (en) * 2010-05-10 2011-11-10 International Business Machines Corporation High work function metal interfacial films for improving fill factor in solar cells
WO2017091269A2 (en) * 2015-08-31 2017-06-01 The Board Of Regents Of The University Of Oklahoma Semiconductor devices having matrix-embedded nano-structured materials

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3370207A (en) * 1964-02-24 1968-02-20 Gen Electric Multilayer contact system for semiconductor devices including gold and copper layers
US3268309A (en) * 1964-03-30 1966-08-23 Gen Electric Semiconductor contact means
US3465428A (en) * 1966-10-27 1969-09-09 Trw Inc Method of fabricating semiconductor devices and the like
US4065781A (en) * 1974-06-21 1977-12-27 Westinghouse Electric Corporation Insulated-gate thin film transistor with low leakage current
US4000508A (en) * 1975-07-17 1976-12-28 Honeywell Inc. Ohmic contacts to p-type mercury cadmium telluride
JPS5237785A (en) * 1975-09-20 1977-03-23 Agency Of Ind Science & Technol Process for production of photovoltaic elements
JPS5356988A (en) * 1976-11-04 1978-05-23 Agency Of Ind Science & Technol Photovoltaic element
JPS5454589A (en) * 1977-10-11 1979-04-28 Agency Of Ind Science & Technol Photoelectric transducer and production of the same
US4319069A (en) * 1980-07-25 1982-03-09 Eastman Kodak Company Semiconductor devices having improved low-resistance contacts to p-type CdTe, and method of preparation
JPS6033793B2 (ja) * 1981-01-19 1985-08-05 株式会社村田製作所 銅被膜を有するセラミツク体
JPS57126101A (en) * 1981-01-29 1982-08-05 Murata Manufacturing Co Method of forming electrode for barium titanate series semiconductor porcelain
US4388483A (en) * 1981-09-08 1983-06-14 Monosolar, Inc. Thin film heterojunction photovoltaic cells and methods of making the same
JPS5931041A (ja) * 1982-08-13 1984-02-18 Seiko Epson Corp 薄膜半導体装置
US4456630A (en) * 1983-08-18 1984-06-26 Monosolar, Inc. Method of forming ohmic contacts
JPH1151A (ja) * 1997-06-11 1999-01-06 Takashi Osawa ゲルマニウムミネラルを含んだ野菜を作る 土壌改良植成剤

Also Published As

Publication number Publication date
EP0186350B1 (de) 1990-08-29
AU581946B2 (en) 1989-03-09
AU3404589A (en) 1989-08-31
CA1236224A (en) 1988-05-03
JPS61222180A (ja) 1986-10-02
EP0186350A3 (en) 1988-01-20
DE3579429D1 (de) 1990-10-04
AU608154B2 (en) 1991-03-21
ES550464A0 (es) 1987-11-16
ZA859821B (en) 1986-09-24
US4680611A (en) 1987-07-14
AU5085185A (en) 1986-07-03
EP0186350A2 (de) 1986-07-02
ES8800785A1 (es) 1987-11-16

Similar Documents

Publication Publication Date Title
KR890011034A (ko) P-형 텔루륨-함유 ii-vi 반도체 박막용 안정한 저항성 접점을 제조하는 방법 및 그 저항성 접점을 갖는 광기전 장치
TW230261B (en) Semiconductor and process of manufacturing thereof
TW350135B (en) Semiconductor device and method of manufacturing the same the invention relates to a semiconductor device and method of manufacturing the same
EP0221531A3 (de) Isoliertes gut wärmeleitendes Substrat und sein Herstellungsverfahren
EP1450415A3 (de) Halbleitervorrichtung aus einer galliumnitridartigen III-V-Halbleiterverbindung
ES8507730A1 (es) Metodo de formacion de contactos ohmicos
ATE56105T1 (de) Ohm'scher mehrschichtkontakt fuer p-typ-halbleiter und verfahren zur herstellung desselben.
EP0255911A3 (de) Schichtstruktur aus Metall-Dielektrikum-Metall mit Durchgangsleitungen niedrigen Widerstandes
EP0370605A3 (de) Supraleitende Schicht und deren tragendes Substrat
JPS55102267A (en) Semiconductor control element
JPS6446990A (en) Josephson element and manufacture thereof
EP0190855A3 (de) Gegen niederohmige Defekte unempfindliche fotovoltaische Anordnung
KR890015299A (ko) 산화 금속 피막 저항기
EP0396276A3 (de) Verfahren zum Herstellen einer Halbeitervorrichtung
JPS56130920A (en) Forming method of electrode for semiconductor device
ES8608232A1 (es) Un dispositivo semiconductor mejorado,de aplicaciones elec- tronicas
JPS5637666A (en) Semiconductor integrated circuit
KR910019176A (ko) 감소된 부식 가능성을 갖는 금속화 시스템 및 이에 의한 반도체 집적회로의 제조방법
JPS5471562A (en) Semiconductor element
JPS63248156A (ja) 半導体装置
JPS6457664A (en) Contact connection structure
JPS5541731A (en) Semiconductor device
JPS6450572A (en) Semiconductor radiation ray detection element
KR930003261A (ko) 반도체 집적 회로
JPS60130867A (ja) 非晶質シリコン太陽電池

Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee