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ATE555058T1 - PRODUCTION OF PIEZOELECTRIC SUSPENDED MICRO COMPONENTS USING THE SACRIFICIAL THICK FILM METHOD - Google Patents

PRODUCTION OF PIEZOELECTRIC SUSPENDED MICRO COMPONENTS USING THE SACRIFICIAL THICK FILM METHOD

Info

Publication number
ATE555058T1
ATE555058T1 AT07712639T AT07712639T ATE555058T1 AT E555058 T1 ATE555058 T1 AT E555058T1 AT 07712639 T AT07712639 T AT 07712639T AT 07712639 T AT07712639 T AT 07712639T AT E555058 T1 ATE555058 T1 AT E555058T1
Authority
AT
Austria
Prior art keywords
ink
films
film
piezoelectric
production
Prior art date
Application number
AT07712639T
Other languages
German (de)
Inventor
Claude Lucat
Francis Menil
Helene Debeda-Hickel
Patrick Ginet
Original Assignee
Centre Nat Rech Scient
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre Nat Rech Scient filed Critical Centre Nat Rech Scient
Application granted granted Critical
Publication of ATE555058T1 publication Critical patent/ATE555058T1/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C99/00—Subject matter not provided for in other groups of this subclass
    • B81C99/0075—Manufacture of substrate-free structures
    • B81C99/0095—Aspects relating to the manufacture of substrate-free structures, not covered by groups B81C99/008 - B81C99/009
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0271—Resonators; ultrasonic resonators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/03—Microengines and actuators
    • B81B2201/031—Thermal actuators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0109—Bridges
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0118—Cantilevers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/40—Piezoelectric or electrostrictive devices with electrical input and electrical output, e.g. functioning as transformers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24926—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including ceramic, glass, porcelain or quartz layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
  • Laminated Bodies (AREA)
  • Micromachines (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)

Abstract

The invention relates to the preparation of multilayer microcomponents which comprise one or more films, each consisting of a material M selected from metals, metal alloys, glasses, ceramics and glass-ceramics. The method consists in depositing on a substrate one or more films of an ink P, and one or more films of an ink M, each film being deposited in a predefined pattern selected according to the structure of the microcomponent, each film of ink P and each film of ink M being at least partially consolidated before deposition of the next film; effecting a total consolidation of the films of ink M partially consolidated after their deposition, to convert them to films of material M; totally or partially removing the material of each of the films of ink P. An ink P consists of a thermoset resin containing a mineral filler or a mixture comprising a mineral filler and an organic binder. An ink M consists of a mineral material precursor of the material M and an organic binder. The inks are deposited by pouring or by extrusion.
AT07712639T 2006-01-06 2007-01-05 PRODUCTION OF PIEZOELECTRIC SUSPENDED MICRO COMPONENTS USING THE SACRIFICIAL THICK FILM METHOD ATE555058T1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0600124A FR2895986B1 (en) 2006-01-06 2006-01-06 PREPARATION OF MULTILAYER MICROCOMPONENTS BY THE METHOD OF THE SACRIFICIAL THICK LAYER
PCT/FR2007/000013 WO2007077397A2 (en) 2006-01-06 2007-01-05 Production of multilayer microcomponents by the sacrificial thick layer method

Publications (1)

Publication Number Publication Date
ATE555058T1 true ATE555058T1 (en) 2012-05-15

Family

ID=37066416

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07712639T ATE555058T1 (en) 2006-01-06 2007-01-05 PRODUCTION OF PIEZOELECTRIC SUSPENDED MICRO COMPONENTS USING THE SACRIFICIAL THICK FILM METHOD

Country Status (7)

Country Link
US (1) US8287943B2 (en)
EP (1) EP1968885B1 (en)
JP (1) JP5154444B2 (en)
AT (1) ATE555058T1 (en)
ES (1) ES2386572T3 (en)
FR (1) FR2895986B1 (en)
WO (1) WO2007077397A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
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US7993560B2 (en) * 2006-04-20 2011-08-09 Curwood, Inc. Process for introducing an additive into a polymer melt
EP2333340A1 (en) * 2009-12-07 2011-06-15 Debiotech S.A. Flexible element for a micro-pump
US10062845B1 (en) * 2016-05-13 2018-08-28 Crossbar, Inc. Flatness of memory cell surfaces
US10522754B2 (en) 2016-06-15 2019-12-31 Crossbar, Inc. Liner layer for dielectric block layer
US10749110B1 (en) 2016-07-15 2020-08-18 Crossbar, Inc. Memory stack liner comprising dielectric block layer material
JP6945838B2 (en) * 2016-10-27 2021-10-06 国立研究開発法人産業技術総合研究所 Manufacturing method of hollow structure

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2570223B1 (en) * 1984-09-07 1986-12-05 Labo Electronique Physique PIEZOELECTRIC DEVICE AND METHOD FOR PRODUCING SUCH A DEVICE
DE69533554T2 (en) * 1994-11-10 2005-01-27 Orchid Biosciences, Inc. LIQUID DISTRIBUTION SYSTEM
US6033544A (en) * 1996-10-11 2000-03-07 Sarnoff Corporation Liquid distribution system
CA2306384A1 (en) * 1997-10-14 1999-04-22 Patterning Technologies Limited Method of forming an electronic device
JPH11168248A (en) * 1997-12-04 1999-06-22 Fujitsu Ltd Piezoelectric element and method of manufacturing the same
JPH11274595A (en) * 1998-03-23 1999-10-08 Hitachi Metals Ltd Piezoelectric ceramics, lamination type piezoelectric ceramics vibrator and its manufacture
US6232139B1 (en) * 1999-01-29 2001-05-15 Sandia Corporation Method of making suspended thin-film semiconductor piezoelectric devices
EP1153405B1 (en) * 1999-12-10 2006-09-13 Koninklijke Philips Electronics N.V. Electronic devices including micromechanical switches
US6738600B1 (en) * 2000-08-04 2004-05-18 Harris Corporation Ceramic microelectromechanical structure
JP2005236337A (en) * 2001-05-11 2005-09-02 Ube Ind Ltd Thin film acoustic resonator and manufacturing method thereof
WO2002096166A1 (en) * 2001-05-18 2002-11-28 Corporation For National Research Initiatives Radio frequency microelectromechanical systems (mems) devices on low-temperature co-fired ceramic (ltcc) substrates
CN1292447C (en) * 2001-11-09 2006-12-27 图恩斯通系统公司 MEMS device with three-layer beam
US6876046B2 (en) * 2002-02-07 2005-04-05 Superconductor Technologies, Inc. Stiction alleviation using passivation layer patterning
JP3999156B2 (en) * 2003-03-31 2007-10-31 日本碍子株式会社 Piezoelectric / electrostrictive film type element and piezoelectric / electrostrictive porcelain composition
KR100646135B1 (en) * 2003-07-21 2006-11-23 쌍신전자통신주식회사 Silicon bulk acoustic wave device and its manufacturing method
US6979585B2 (en) * 2003-10-10 2005-12-27 Hewlett-Packard Development Company, L.P. Micro-electromechanical system
KR100661176B1 (en) * 2004-12-17 2006-12-26 삼성전자주식회사 MEMS switch and its manufacturing method
WO2006087878A1 (en) * 2005-02-21 2006-08-24 Murata Manufacturing Co., Ltd. Piezoelectric thin film resonator
US7562429B2 (en) * 2005-06-20 2009-07-21 Avago Technologies General Ip (Singapore) Pte. Ltd. Suspended device and method of making
US7741687B2 (en) * 2006-03-10 2010-06-22 Semiconductor Energy Laboratory Co., Ltd. Microstructure, semiconductor device, and manufacturing method of the microstructure
US7834524B2 (en) * 2009-01-30 2010-11-16 Integrated Device Technology, Inc. Micro-electromechanical devices having variable capacitors therein that compensate for temperature-induced frequency drift in acoustic resonators

Also Published As

Publication number Publication date
FR2895986B1 (en) 2008-09-05
JP5154444B2 (en) 2013-02-27
JP2009522120A (en) 2009-06-11
WO2007077397A2 (en) 2007-07-12
US8287943B2 (en) 2012-10-16
FR2895986A1 (en) 2007-07-13
ES2386572T3 (en) 2012-08-23
WO2007077397A3 (en) 2007-08-30
EP1968885B1 (en) 2012-04-25
US20090197061A1 (en) 2009-08-06
EP1968885A2 (en) 2008-09-17

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