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ATE506676T1 - Dünnfilm-speicherbaustein mit variablem widerstand - Google Patents

Dünnfilm-speicherbaustein mit variablem widerstand

Info

Publication number
ATE506676T1
ATE506676T1 AT04793188T AT04793188T ATE506676T1 AT E506676 T1 ATE506676 T1 AT E506676T1 AT 04793188 T AT04793188 T AT 04793188T AT 04793188 T AT04793188 T AT 04793188T AT E506676 T1 ATE506676 T1 AT E506676T1
Authority
AT
Austria
Prior art keywords
thin film
variable resistance
electrode
memory device
film memory
Prior art date
Application number
AT04793188T
Other languages
English (en)
Inventor
Koichi Osano
Shunsaku Muraoka
Hiroshi Sakakima
Original Assignee
Panasonic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp filed Critical Panasonic Corp
Application granted granted Critical
Publication of ATE506676T1 publication Critical patent/ATE506676T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/003—Cell access
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8836—Complex metal oxides, e.g. perovskites, spinels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/31—Material having complex metal oxide, e.g. perovskite structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/78—Array wherein the memory cells of a group share an access device, all the memory cells of the group having a common electrode and the access device being not part of a word line or a bit line driver
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1107—Magnetoresistive
    • Y10T428/1136—Single film
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/115—Magnetic layer composition

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
AT04793188T 2004-04-16 2004-10-22 Dünnfilm-speicherbaustein mit variablem widerstand ATE506676T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004121237 2004-04-16
PCT/JP2004/016080 WO2005101420A1 (en) 2004-04-16 2004-10-22 Thin film memory device having a variable resistance

Publications (1)

Publication Number Publication Date
ATE506676T1 true ATE506676T1 (de) 2011-05-15

Family

ID=34958982

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04793188T ATE506676T1 (de) 2004-04-16 2004-10-22 Dünnfilm-speicherbaustein mit variablem widerstand

Country Status (9)

Country Link
US (1) US8263961B2 (de)
EP (1) EP1751767B1 (de)
JP (1) JP4623670B2 (de)
KR (1) KR101046868B1 (de)
CN (1) CN1938781B (de)
AT (1) ATE506676T1 (de)
DE (1) DE602004032392D1 (de)
TW (1) TWI379401B (de)
WO (1) WO2005101420A1 (de)

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KR100668348B1 (ko) * 2005-11-11 2007-01-12 삼성전자주식회사 비휘발성 메모리 소자 및 그 제조방법
US7733684B2 (en) 2005-12-13 2010-06-08 Kabushiki Kaisha Toshiba Data read/write device
JP4791948B2 (ja) * 2005-12-13 2011-10-12 株式会社東芝 情報記録再生装置
CN101351888B (zh) * 2006-01-24 2010-08-18 松下电器产业株式会社 电元件、存储装置、和半导体集成电路
JP4699932B2 (ja) * 2006-04-13 2011-06-15 パナソニック株式会社 抵抗変化素子とそれを用いた抵抗変化型メモリならびにその製造方法
JP2008021750A (ja) * 2006-07-11 2008-01-31 Matsushita Electric Ind Co Ltd 抵抗変化素子およびその製造方法、ならびにそれを用いた抵抗変化型メモリ
WO2008023637A1 (fr) * 2006-08-25 2008-02-28 Panasonic Corporation Élément de stockage, dispositif mémoire et circuit intégré à semi-conducteur
CN101501851B (zh) * 2006-12-28 2010-11-17 松下电器产业株式会社 电阻变化型元件和电阻变化型存储装置
CN101569011A (zh) * 2006-12-28 2009-10-28 松下电器产业株式会社 电阻变化型元件、电阻变化型存储装置和电阻变化型装置
JP2008244018A (ja) * 2007-03-26 2008-10-09 Ulvac Japan Ltd 半導体装置の製造方法
WO2008129683A1 (ja) * 2007-03-30 2008-10-30 Kabushiki Kaisha Toshiba 情報記録再生装置
TW200839956A (en) * 2007-03-30 2008-10-01 Toshiba Kk Information recording/reproducing apparatus
JP4792006B2 (ja) * 2007-06-12 2011-10-12 株式会社東芝 情報記録再生装置
JP4792007B2 (ja) 2007-06-12 2011-10-12 株式会社東芝 情報記録再生装置
JP4792010B2 (ja) 2007-06-12 2011-10-12 株式会社東芝 情報記録再生装置
JP4792009B2 (ja) * 2007-06-12 2011-10-12 株式会社東芝 情報記録再生装置
US8294133B2 (en) * 2007-08-24 2012-10-23 National University Corporation Okayama University Electronic element and electroconductivity control method
JP5159270B2 (ja) * 2007-11-22 2013-03-06 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
KR20090055874A (ko) * 2007-11-29 2009-06-03 삼성전자주식회사 비휘발성 메모리 소자 및 그 제조 방법
JP2009224403A (ja) * 2008-03-13 2009-10-01 Toshiba Corp 情報記録素子及びそれを備えた情報記録再生装置
WO2009116139A1 (ja) * 2008-03-18 2009-09-24 株式会社 東芝 情報記録再生装置
JP4792125B2 (ja) * 2008-04-01 2011-10-12 株式会社東芝 情報記録再生装置
JP5300839B2 (ja) * 2008-04-15 2013-09-25 株式会社東芝 情報記録再生装置
JP5318107B2 (ja) * 2008-09-04 2013-10-16 株式会社東芝 情報記録再生装置
JP5512525B2 (ja) * 2008-09-08 2014-06-04 株式会社東芝 不揮発性記憶素子及び不揮発性記憶装置
US8263420B2 (en) * 2008-11-12 2012-09-11 Sandisk 3D Llc Optimized electrodes for Re-RAM
JP5360145B2 (ja) * 2011-07-08 2013-12-04 ソニー株式会社 記憶素子及び記憶装置
CN111129300A (zh) * 2020-01-10 2020-05-08 新疆大学 一种CuFe2O4薄膜电阻式随机存储器件及其制备方法
US11307249B1 (en) * 2020-12-29 2022-04-19 Nanya Technology Corporation Method for characterizing resistance state of programmable element

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US6204139B1 (en) * 1998-08-25 2001-03-20 University Of Houston Method for switching the properties of perovskite materials used in thin film resistors
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US6473336B2 (en) 1999-12-16 2002-10-29 Kabushiki Kaisha Toshiba Magnetic memory device
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JP3578721B2 (ja) * 2000-03-14 2004-10-20 松下電器産業株式会社 磁気制御素子とそれを用いた磁気部品及びメモリー装置
US6680831B2 (en) * 2000-09-11 2004-01-20 Matsushita Electric Industrial Co., Ltd. Magnetoresistive element, method for manufacturing the same, and method for forming a compound magnetic thin film
JP3603771B2 (ja) 2000-09-26 2004-12-22 松下電器産業株式会社 磁気抵抗素子およびそれを用いた磁気センサ、メモリー装置
JP3677455B2 (ja) * 2001-02-13 2005-08-03 Ｎｅｃエレクトロニクス株式会社 不揮発性磁気記憶装置およびその製造方法
JP4712204B2 (ja) 2001-03-05 2011-06-29 ルネサスエレクトロニクス株式会社 記憶装置
JP2003007980A (ja) * 2001-06-20 2003-01-10 Sony Corp 磁気特性の変調方法および磁気機能装置
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JP2003133529A (ja) 2001-10-24 2003-05-09 Sony Corp 情報記憶装置およびその製造方法
JP4073690B2 (ja) 2001-11-14 2008-04-09 株式会社ルネサステクノロジ 薄膜磁性体記憶装置
JP4304688B2 (ja) 2002-06-28 2009-07-29 独立行政法人科学技術振興機構 スピンフィルタ効果素子及びそれを用いた磁気デバイス

Also Published As

Publication number Publication date
JP4623670B2 (ja) 2011-02-02
JP2007533118A (ja) 2007-11-15
KR101046868B1 (ko) 2011-07-06
WO2005101420A1 (en) 2005-10-27
EP1751767A1 (de) 2007-02-14
CN1938781B (zh) 2011-09-21
CN1938781A (zh) 2007-03-28
DE602004032392D1 (de) 2011-06-01
EP1751767B1 (de) 2011-04-20
TW200539421A (en) 2005-12-01
US8263961B2 (en) 2012-09-11
TWI379401B (en) 2012-12-11
US20070196696A1 (en) 2007-08-23
KR20060132693A (ko) 2006-12-21

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Legal Events

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