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ATE459091T1 - METHOD FOR REMOVAL A MICROSCOPIC SAMPLE FROM A SUBSTRATE - Google Patents

METHOD FOR REMOVAL A MICROSCOPIC SAMPLE FROM A SUBSTRATE

Info

Publication number
ATE459091T1
ATE459091T1 AT05076464T AT05076464T ATE459091T1 AT E459091 T1 ATE459091 T1 AT E459091T1 AT 05076464 T AT05076464 T AT 05076464T AT 05076464 T AT05076464 T AT 05076464T AT E459091 T1 ATE459091 T1 AT E459091T1
Authority
AT
Austria
Prior art keywords
substrate
sample
beams
removal
cutting
Prior art date
Application number
AT05076464T
Other languages
German (de)
Inventor
Henk Gezinus Tappel
Original Assignee
Fei Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fei Co filed Critical Fei Co
Application granted granted Critical
Publication of ATE459091T1 publication Critical patent/ATE459091T1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00126—Static structures not provided for in groups B81C1/00031 - B81C1/00119
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/0143—Focussed beam, i.e. laser, ion or e-beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31745—Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31749—Focused ion beam

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)

Abstract

The invention provides a method for the removal of a microscopic sample 1 from a substrate 2, comprising: performing a cutting process whereby the substrate 2 is irradiated with a beam 4 such that the sample 1 is cut out of the substrate 2, and performing an adhesion process whereby the sample 1 is adhered to a probe 3 , characterized in that the cutting process, during at least part of the duration of the cutting process, is carried out by at least two beams 4, 5 simultaneously. By performing cutting with at least two beams, the sample 1 can be extracted without having to change the orientation of the substrate 2 with respect to the means that produce the beams. Both the act of working with two beams simultaneously and the attendant possibility of keeping the orientation constant provide time-savings compared to a method whereby cutting is only performed with a single beam.
AT05076464T 2004-07-01 2005-06-27 METHOD FOR REMOVAL A MICROSCOPIC SAMPLE FROM A SUBSTRATE ATE459091T1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP04076892 2004-07-01

Publications (1)

Publication Number Publication Date
ATE459091T1 true ATE459091T1 (en) 2010-03-15

Family

ID=35656175

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05076464T ATE459091T1 (en) 2004-07-01 2005-06-27 METHOD FOR REMOVAL A MICROSCOPIC SAMPLE FROM A SUBSTRATE

Country Status (5)

Country Link
US (1) US20060017016A1 (en)
JP (1) JP2006017729A (en)
CN (1) CN1715863B (en)
AT (1) ATE459091T1 (en)
DE (1) DE602005019498D1 (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7124937B2 (en) * 2005-01-21 2006-10-24 Visa U.S.A. Inc. Wireless payment methods and systems
US7442924B2 (en) * 2005-02-23 2008-10-28 Fei, Company Repetitive circumferential milling for sample preparation
JP5099291B2 (en) * 2006-02-14 2012-12-19 エスアイアイ・ナノテクノロジー株式会社 Focused ion beam apparatus and sample cross-section processing and observation method
US7423263B2 (en) 2006-06-23 2008-09-09 Fei Company Planar view sample preparation
EP2104946B1 (en) 2006-10-20 2015-08-12 FEI Company Method for creating s/tem sample and sample structure
US8357913B2 (en) 2006-10-20 2013-01-22 Fei Company Method and apparatus for sample extraction and handling
US8168960B2 (en) * 2007-03-06 2012-05-01 Leica Mikrosysteme Gmbh Method for the production of a sample for electron microscopy
EP2009422B1 (en) * 2007-06-29 2009-08-12 FEI Company Method for attaching a sample to a manipulator
JP5294919B2 (en) * 2009-02-23 2013-09-18 キヤノン株式会社 Workpiece manufacturing method
DE102010024625A1 (en) * 2010-06-22 2011-12-22 Carl Zeiss Nts Gmbh Method for editing an object
DE102010032894B4 (en) * 2010-07-30 2013-08-22 Carl Zeiss Microscopy Gmbh Tem lamella, process for its preparation and apparatus for carrying out the process
US8592785B2 (en) * 2011-09-22 2013-11-26 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-ion beam implantation apparatus and method
US8884247B2 (en) * 2012-09-25 2014-11-11 Fei Company System and method for ex situ analysis of a substrate
CN104792583B (en) * 2014-01-17 2018-06-26 中芯国际集成电路制造(上海)有限公司 A kind of preparation method of TEM sample
CN106289890B (en) * 2015-05-15 2019-04-02 中芯国际集成电路制造(上海)有限公司 The preparation method of TEM sample
US11573156B2 (en) * 2019-01-15 2023-02-07 Westinghouse Electric Company Llc Minimally invasive microsampler for intact removal of surface deposits and substrates

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6064228A (en) * 1983-09-20 1985-04-12 Nec Corp Method and apparatus for preparing sample for transmission type electron microscope
JP2774884B2 (en) * 1991-08-22 1998-07-09 株式会社日立製作所 Method for separating sample and method for analyzing separated sample obtained by this separation method
WO1999005506A1 (en) * 1997-07-22 1999-02-04 Hitachi, Ltd. Method and apparatus for preparing samples
US6420722B2 (en) * 2000-05-22 2002-07-16 Omniprobe, Inc. Method for sample separation and lift-out with one cut
JP4178741B2 (en) * 2000-11-02 2008-11-12 株式会社日立製作所 Charged particle beam apparatus and sample preparation apparatus
EP1209737B2 (en) * 2000-11-06 2014-04-30 Hitachi, Ltd. Method for specimen fabrication
US6570170B2 (en) * 2001-03-01 2003-05-27 Omniprobe, Inc. Total release method for sample extraction from a charged-particle instrument
JP2004093353A (en) * 2002-08-30 2004-03-25 Seiko Instruments Inc Sample preparation device
JP3887356B2 (en) * 2003-07-08 2007-02-28 エスアイアイ・ナノテクノロジー株式会社 Thin sample preparation method

Also Published As

Publication number Publication date
CN1715863A (en) 2006-01-04
DE602005019498D1 (en) 2010-04-08
JP2006017729A (en) 2006-01-19
CN1715863B (en) 2012-02-29
US20060017016A1 (en) 2006-01-26

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Legal Events

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