ATE456155T1 - FIELD EFFECT TRANSISTOR SEMICONDUCTOR COMPONENT - Google Patents
FIELD EFFECT TRANSISTOR SEMICONDUCTOR COMPONENTInfo
- Publication number
- ATE456155T1 ATE456155T1 AT02781506T AT02781506T ATE456155T1 AT E456155 T1 ATE456155 T1 AT E456155T1 AT 02781506 T AT02781506 T AT 02781506T AT 02781506 T AT02781506 T AT 02781506T AT E456155 T1 ATE456155 T1 AT E456155T1
- Authority
- AT
- Austria
- Prior art keywords
- field effect
- effect transistor
- semiconductor component
- transistor semiconductor
- component
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/149—Source or drain regions of field-effect devices
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB0127479.4A GB0127479D0 (en) | 2001-11-16 | 2001-11-16 | Trench-gate semiconductor devices and the manufacture thereof |
GBGB0130019.3A GB0130019D0 (en) | 2001-11-16 | 2001-12-17 | Trench-gate semiconductor devices and the manufacture thereof |
GB0221839A GB0221839D0 (en) | 2001-11-16 | 2002-09-20 | A field effect transistor semiconductor device |
PCT/IB2002/004759 WO2003043089A1 (en) | 2001-11-16 | 2002-11-13 | A field effect transistor semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE456155T1 true ATE456155T1 (en) | 2010-02-15 |
Family
ID=9925865
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT02781506T ATE456155T1 (en) | 2001-11-16 | 2002-11-13 | FIELD EFFECT TRANSISTOR SEMICONDUCTOR COMPONENT |
Country Status (4)
Country | Link |
---|---|
KR (2) | KR20040065560A (en) |
AT (1) | ATE456155T1 (en) |
DE (1) | DE60235187D1 (en) |
GB (2) | GB0127479D0 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007184553A (en) * | 2005-12-06 | 2007-07-19 | Sanyo Electric Co Ltd | Semiconductor device and manufacturing method thereof |
JP5128100B2 (en) * | 2006-09-29 | 2013-01-23 | 三菱電機株式会社 | Power semiconductor device |
US7994573B2 (en) | 2007-12-14 | 2011-08-09 | Fairchild Semiconductor Corporation | Structure and method for forming power devices with carbon-containing region |
KR102053354B1 (en) * | 2013-07-17 | 2019-12-06 | 삼성전자주식회사 | A semiconductor device having a buried channel array and method of manufacturing the same |
-
2001
- 2001-11-16 GB GBGB0127479.4A patent/GB0127479D0/en not_active Ceased
- 2001-12-17 GB GBGB0130019.3A patent/GB0130019D0/en not_active Ceased
-
2002
- 2002-11-13 KR KR10-2004-7007430A patent/KR20040065560A/en active IP Right Grant
- 2002-11-13 DE DE60235187T patent/DE60235187D1/en not_active Expired - Lifetime
- 2002-11-13 AT AT02781506T patent/ATE456155T1/en not_active IP Right Cessation
- 2002-11-14 KR KR10-2004-7007403A patent/KR20040065224A/en not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
KR20040065560A (en) | 2004-07-22 |
DE60235187D1 (en) | 2010-03-11 |
KR20040065224A (en) | 2004-07-21 |
GB0127479D0 (en) | 2002-01-09 |
GB0130019D0 (en) | 2002-02-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |