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ATE424043T1 - Photosensor und photosensorsystem - Google Patents

Photosensor und photosensorsystem

Info

Publication number
ATE424043T1
ATE424043T1 AT00948313T AT00948313T ATE424043T1 AT E424043 T1 ATE424043 T1 AT E424043T1 AT 00948313 T AT00948313 T AT 00948313T AT 00948313 T AT00948313 T AT 00948313T AT E424043 T1 ATE424043 T1 AT E424043T1
Authority
AT
Austria
Prior art keywords
photosensor
carrier generating
incident
generating regions
equalize
Prior art date
Application number
AT00948313T
Other languages
English (en)
Inventor
Kazuhiro Sasaki
Makoto Sasaki
Yasuo Koshizuka
Original Assignee
Casio Computer Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2000107468A external-priority patent/JP4154555B2/ja
Priority claimed from JP2000122157A external-priority patent/JP3951088B2/ja
Priority claimed from JP2000163303A external-priority patent/JP3674942B2/ja
Application filed by Casio Computer Co Ltd filed Critical Casio Computer Co Ltd
Application granted granted Critical
Publication of ATE424043T1 publication Critical patent/ATE424043T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/198—Contact-type image sensors [CIS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/282—Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Geophysics And Detection Of Objects (AREA)
  • Prostheses (AREA)
  • Air Bags (AREA)
  • Burglar Alarm Systems (AREA)
  • Measurement Of Mechanical Vibrations Or Ultrasonic Waves (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Light Receiving Elements (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Thin Film Transistor (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
AT00948313T 1999-08-02 2000-07-28 Photosensor und photosensorsystem ATE424043T1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP21831699 1999-08-02
JP2000107468A JP4154555B2 (ja) 2000-04-10 2000-04-10 フォトセンサアレイ及び２次元画像の読取装置
JP2000122157A JP3951088B2 (ja) 2000-04-24 2000-04-24 フォトセンサアレイおよび２次元画像の読取装置
JP2000163303A JP3674942B2 (ja) 1999-08-02 2000-05-31 光電変換素子、フォトセンサアレイおよび２次元画像の読取装置

Publications (1)

Publication Number Publication Date
ATE424043T1 true ATE424043T1 (de) 2009-03-15

Family

ID=27476860

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00948313T ATE424043T1 (de) 1999-08-02 2000-07-28 Photosensor und photosensorsystem

Country Status (13)

Country Link
US (1) US6670595B1 (de)
EP (1) EP1118126B1 (de)
KR (1) KR20010075560A (de)
CN (1) CN1316636C (de)
AT (1) ATE424043T1 (de)
AU (1) AU756447B2 (de)
CA (1) CA2346032C (de)
DE (1) DE60041627D1 (de)
EA (1) EA003343B1 (de)
HK (1) HK1041366B (de)
NO (1) NO20011640L (de)
TW (1) TW465105B (de)
WO (1) WO2001009960A1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100382817B1 (ko) * 1999-01-20 2003-05-09 엘지.필립스 엘시디 주식회사 생체감지패턴 및 이를 이용한 박막트랜지스터형 광센서
US6765187B2 (en) * 2001-06-27 2004-07-20 Canon Kabushiki Kaisha Imaging apparatus
JP4154874B2 (ja) * 2001-07-30 2008-09-24 カシオ計算機株式会社 指紋読取装置および指紋読取方法
TWI243339B (en) * 2002-03-19 2005-11-11 Casio Computer Co Ltd Image reading apparatus and drive control method
JP5157161B2 (ja) * 2006-12-27 2013-03-06 カシオ計算機株式会社 フォトセンサ
US8354674B2 (en) * 2007-06-29 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer
AT505688A1 (de) * 2007-09-13 2009-03-15 Nanoident Technologies Ag Sensormatrix aus halbleiterbauteilen
TWI354823B (en) 2007-09-17 2011-12-21 Au Optronics Corp Display device, manufacturing method thereof, cont
JP2009164543A (ja) * 2007-12-11 2009-07-23 Sony Corp 光センサ及び表示装置
KR101322137B1 (ko) * 2008-06-24 2013-10-25 엘지디스플레이 주식회사 액정표시장치
CN102509736B (zh) 2008-10-24 2015-08-19 株式会社半导体能源研究所 半导体器件和用于制造该半导体器件的方法
US20130214279A1 (en) * 2010-04-30 2013-08-22 Jun Nishimura Circuit board and display device
KR20120075971A (ko) * 2010-12-29 2012-07-09 삼성모바일디스플레이주식회사 적층형 포토다이오드 및 그 제조방법
ES2971473T3 (es) * 2013-12-10 2024-06-05 Illumina Inc Biosensores para análisis biológicos o químicos y métodos para la fabricación de los mismos
CN111276546B (zh) * 2020-02-20 2022-07-29 武汉华星光电技术有限公司 显示面板及其制作方法
CN115411135A (zh) * 2021-05-13 2022-11-29 北京大学深圳研究生院 一种光电探测晶体管
CN116314231A (zh) * 2023-03-31 2023-06-23 京东方科技集团股份有限公司 一种光电传感器组件及电子设备

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU862753A1 (ru) * 1980-04-03 1996-05-10 Запорожский индустриальный институт Фототранзистор
US4744637A (en) * 1984-10-05 1988-05-17 Canon Kabushiki Kaisha Liquid crystal device with a protective layer of a particular coefficient of expansion
US5200634A (en) * 1988-09-30 1993-04-06 Hitachi, Ltd. Thin film phototransistor and photosensor array using the same
ATE135496T1 (de) * 1990-03-27 1996-03-15 Canon Kk Dünnschicht-halbleiterbauelement
US5075237A (en) * 1990-07-26 1991-12-24 Industrial Technology Research Institute Process of making a high photosensitive depletion-gate thin film transistor
JPH04299578A (ja) * 1991-03-27 1992-10-22 Canon Inc 光電変換素子及び薄膜半導体装置
RU2045110C1 (ru) * 1992-03-27 1995-09-27 Валерий Александрович Болдырев Фотоприемник с ячеистой структурой
US5461419A (en) * 1992-10-16 1995-10-24 Casio Computer Co., Ltd. Photoelectric conversion system
JP3019632B2 (ja) * 1992-10-16 2000-03-13 カシオ計算機株式会社 フォトセンサシステム及びその駆動方法
US5604360A (en) * 1992-12-04 1997-02-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including a plurality of thin film transistors at least some of which have a crystalline silicon film crystal-grown substantially in parallel to the surface of a substrate for the transistor
WO1994026061A1 (en) 1993-04-29 1994-11-10 Michael Friedland Hands free video camera system
JPH08102547A (ja) * 1994-09-30 1996-04-16 Casio Comput Co Ltd 光電変換装置及びその製造方法
RU2114490C1 (ru) * 1995-08-08 1998-06-27 Винницкий государственный технический университет Полупроводниковый оптический датчик
JPH0980470A (ja) * 1995-09-14 1997-03-28 Hitachi Electron Eng Co Ltd Ｔｆｔ基板の配線欠陥修復方法
JP3704406B2 (ja) * 1996-10-30 2005-10-12 株式会社東芝 固体撮像装置
US6310683B1 (en) * 1997-08-05 2001-10-30 Casio Computer Co., Ltd. Apparatus for reading fingerprint

Also Published As

Publication number Publication date
HK1041366A1 (en) 2002-07-05
US6670595B1 (en) 2003-12-30
NO20011640L (no) 2001-06-01
TW465105B (en) 2001-11-21
AU6182800A (en) 2001-02-19
EP1118126A1 (de) 2001-07-25
DE60041627D1 (en) 2009-04-09
CN1319257A (zh) 2001-10-24
WO2001009960A1 (en) 2001-02-08
CA2346032A1 (en) 2001-02-08
AU756447B2 (en) 2003-01-16
HK1041366B (zh) 2009-06-19
KR20010075560A (ko) 2001-08-09
NO20011640D0 (no) 2001-03-30
EA200100409A1 (ru) 2001-10-22
CA2346032C (en) 2004-03-23
EP1118126B1 (de) 2009-02-25
CN1316636C (zh) 2007-05-16
EA003343B1 (ru) 2003-04-24

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