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ATE37907T1 - Verfahren fuer die thermochemischen behandlungen von metallen durch ionenbeschuss. - Google Patents

Verfahren fuer die thermochemischen behandlungen von metallen durch ionenbeschuss.

Info

Publication number
ATE37907T1
ATE37907T1 AT82400407T AT82400407T ATE37907T1 AT E37907 T1 ATE37907 T1 AT E37907T1 AT 82400407 T AT82400407 T AT 82400407T AT 82400407 T AT82400407 T AT 82400407T AT E37907 T1 ATE37907 T1 AT E37907T1
Authority
AT
Austria
Prior art keywords
metals
processes
ion bombardment
anode
pieces
Prior art date
Application number
AT82400407T
Other languages
English (en)
Inventor
Roger Speri
Original Assignee
Innovatique Sa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=9256233&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE37907(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Innovatique Sa filed Critical Innovatique Sa
Application granted granted Critical
Publication of ATE37907T1 publication Critical patent/ATE37907T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
  • Plasma Technology (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
AT82400407T 1981-03-13 1982-03-09 Verfahren fuer die thermochemischen behandlungen von metallen durch ionenbeschuss. ATE37907T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8105107A FR2501727A1 (fr) 1981-03-13 1981-03-13 Procede de traitements thermochimiques de metaux par bombardement ionique
EP82400407A EP0062550B1 (de) 1981-03-13 1982-03-09 Verfahren für die thermochemischen Behandlungen von Metallen durch Ionenbeschuss

Publications (1)

Publication Number Publication Date
ATE37907T1 true ATE37907T1 (de) 1988-10-15

Family

ID=9256233

Family Applications (1)

Application Number Title Priority Date Filing Date
AT82400407T ATE37907T1 (de) 1981-03-13 1982-03-09 Verfahren fuer die thermochemischen behandlungen von metallen durch ionenbeschuss.

Country Status (6)

Country Link
US (2) US4490190A (de)
EP (1) EP0062550B1 (de)
JP (1) JPS57210971A (de)
AT (1) ATE37907T1 (de)
DE (1) DE3279106D1 (de)
FR (1) FR2501727A1 (de)

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FR2748851B1 (fr) * 1996-05-15 1998-08-07 Commissariat Energie Atomique Procede de realisation d'une couche mince de materiau semiconducteur
US5985742A (en) 1997-05-12 1999-11-16 Silicon Genesis Corporation Controlled cleavage process and device for patterned films
US6033974A (en) 1997-05-12 2000-03-07 Silicon Genesis Corporation Method for controlled cleaving process
US6291313B1 (en) 1997-05-12 2001-09-18 Silicon Genesis Corporation Method and device for controlled cleaving process
US20070122997A1 (en) 1998-02-19 2007-05-31 Silicon Genesis Corporation Controlled process and resulting device
US6027988A (en) * 1997-05-28 2000-02-22 The Regents Of The University Of California Method of separating films from bulk substrates by plasma immersion ion implantation
US6548382B1 (en) 1997-07-18 2003-04-15 Silicon Genesis Corporation Gettering technique for wafers made using a controlled cleaving process
FR2773261B1 (fr) 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
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US6291326B1 (en) 1998-06-23 2001-09-18 Silicon Genesis Corporation Pre-semiconductor process implant and post-process film separation
EP1212787B1 (de) 1999-08-10 2014-10-08 Silicon Genesis Corporation Spaltprozess für die herstellung mehrlagiger substrate mit geringer implantationsdosis
US6500732B1 (en) 1999-08-10 2002-12-31 Silicon Genesis Corporation Cleaving process to fabricate multilayered substrates using low implantation doses
US6263941B1 (en) 1999-08-10 2001-07-24 Silicon Genesis Corporation Nozzle for cleaving substrates
US6221740B1 (en) 1999-08-10 2001-04-24 Silicon Genesis Corporation Substrate cleaving tool and method
FR2823599B1 (fr) 2001-04-13 2004-12-17 Commissariat Energie Atomique Substrat demomtable a tenue mecanique controlee et procede de realisation
US8187377B2 (en) 2002-10-04 2012-05-29 Silicon Genesis Corporation Non-contact etch annealing of strained layers
FR2848336B1 (fr) 2002-12-09 2005-10-28 Commissariat Energie Atomique Procede de realisation d'une structure contrainte destinee a etre dissociee
JP4257157B2 (ja) * 2003-06-13 2009-04-22 本田技研工業株式会社 窒化処理方法及び装置
FR2856844B1 (fr) 2003-06-24 2006-02-17 Commissariat Energie Atomique Circuit integre sur puce de hautes performances
FR2857953B1 (fr) 2003-07-21 2006-01-13 Commissariat Energie Atomique Structure empilee, et procede pour la fabriquer
FR2861497B1 (fr) 2003-10-28 2006-02-10 Soitec Silicon On Insulator Procede de transfert catastrophique d'une couche fine apres co-implantation
FR2889887B1 (fr) 2005-08-16 2007-11-09 Commissariat Energie Atomique Procede de report d'une couche mince sur un support
US7811900B2 (en) 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
US9362439B2 (en) 2008-05-07 2016-06-07 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
US8293619B2 (en) 2008-08-28 2012-10-23 Silicon Genesis Corporation Layer transfer of films utilizing controlled propagation
US8993410B2 (en) 2006-09-08 2015-03-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
FR2910179B1 (fr) 2006-12-19 2009-03-13 Commissariat Energie Atomique PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART
FR2925221B1 (fr) 2007-12-17 2010-02-19 Commissariat Energie Atomique Procede de transfert d'une couche mince
US8330126B2 (en) 2008-08-25 2012-12-11 Silicon Genesis Corporation Race track configuration and method for wafering silicon solar substrates
US8329557B2 (en) 2009-05-13 2012-12-11 Silicon Genesis Corporation Techniques for forming thin films by implantation with reduced channeling
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FR2947098A1 (fr) 2009-06-18 2010-12-24 Commissariat Energie Atomique Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince
BR102014026134B1 (pt) * 2014-10-20 2022-09-27 Universidade Federal De Santa Catarina Processo e reator de plasma para tratamento termoquímico de superfície de peças metálicas

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Also Published As

Publication number Publication date
JPS57210971A (en) 1982-12-24
EP0062550B1 (de) 1988-10-12
US4490190A (en) 1984-12-25
FR2501727A1 (fr) 1982-09-17
EP0062550A1 (de) 1982-10-13
DE3279106D1 (en) 1988-11-17
FR2501727B1 (de) 1983-06-03
US4672170A (en) 1987-06-09

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Legal Events

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UEP Publication of translation of european patent specification
RZN Patent revoked