ATE378289T1 - Verfahren und vorrichtung zur herstellung von blöcken aus halbleitermaterial - Google Patents
Verfahren und vorrichtung zur herstellung von blöcken aus halbleitermaterialInfo
- Publication number
- ATE378289T1 ATE378289T1 AT05746642T AT05746642T ATE378289T1 AT E378289 T1 ATE378289 T1 AT E378289T1 AT 05746642 T AT05746642 T AT 05746642T AT 05746642 T AT05746642 T AT 05746642T AT E378289 T1 ATE378289 T1 AT E378289T1
- Authority
- AT
- Austria
- Prior art keywords
- semiconductor material
- chamber
- crystallisation
- crucible
- molten semiconductor
- Prior art date
Links
- 239000000463 material Substances 0.000 title abstract 7
- 239000004065 semiconductor Substances 0.000 title abstract 6
- 238000002425 crystallisation Methods 0.000 abstract 2
- 238000001816 cooling Methods 0.000 abstract 1
- 230000004927 fusion Effects 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
- 238000009434 installation Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000000746 purification Methods 0.000 abstract 1
- 238000007711 solidification Methods 0.000 abstract 1
- 230000008023 solidification Effects 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/037—Purification
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/001—Continuous growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
- H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0450738A FR2869028B1 (fr) | 2004-04-20 | 2004-04-20 | Procede et installation de fabrication de blocs d'un materiau semiconducteur |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE378289T1 true ATE378289T1 (de) | 2007-11-15 |
Family
ID=34945044
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT05746642T ATE378289T1 (de) | 2004-04-20 | 2005-04-19 | Verfahren und vorrichtung zur herstellung von blöcken aus halbleitermaterial |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP1742870B1 (de) |
| AT (1) | ATE378289T1 (de) |
| DE (1) | DE602005003346T2 (de) |
| ES (1) | ES2296181T3 (de) |
| FR (1) | FR2869028B1 (de) |
| WO (1) | WO2005105670A1 (de) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101006205B (zh) * | 2004-06-18 | 2011-11-09 | Memc电子材料有限公司 | 向晶体形成装置装载熔融源材料的熔化器组件和方法 |
| US7344594B2 (en) | 2004-06-18 | 2008-03-18 | Memc Electronic Materials, Inc. | Melter assembly and method for charging a crystal forming apparatus with molten source material |
| US7465351B2 (en) | 2004-06-18 | 2008-12-16 | Memc Electronic Materials, Inc. | Melter assembly and method for charging a crystal forming apparatus with molten source material |
| US7691199B2 (en) | 2004-06-18 | 2010-04-06 | Memc Electronic Materials, Inc. | Melter assembly and method for charging a crystal forming apparatus with molten source material |
| FR2909990B1 (fr) * | 2006-12-13 | 2009-03-13 | Efd Induction Sa Sa | Procede et installation de fabrication de blocs d'un materiau semiconducteur |
| JP4307516B1 (ja) * | 2008-11-25 | 2009-08-05 | 佑吉 堀岡 | 結晶成長装置及び結晶成長方法 |
| FR2940327B1 (fr) | 2008-12-19 | 2011-02-11 | Commissariat Energie Atomique | Four de fusion-solidification comportant une modulation des echanges thermiques par les parois laterales |
| EP2530187A1 (de) * | 2011-06-03 | 2012-12-05 | Evonik Solar Norge AS | Siliciumverfeinerung durch die direktionale Erstarrung in einer sauerstoffhaltigen Atmosphäre |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2827592B1 (fr) * | 2001-07-23 | 2003-08-22 | Invensil | Silicium metallurgique de haute purete et procede d'elaboration |
| FR2831881B1 (fr) * | 2001-11-02 | 2004-01-16 | Hubert Lauvray | Procede de purification de silicium metallurgique par plasma inductif couple a une solidification directionnelle et obtention directe de silicium de qualite solaire |
-
2004
- 2004-04-20 FR FR0450738A patent/FR2869028B1/fr not_active Expired - Fee Related
-
2005
- 2005-04-19 ES ES05746642T patent/ES2296181T3/es active Active
- 2005-04-19 DE DE602005003346T patent/DE602005003346T2/de active Active
- 2005-04-19 EP EP05746642A patent/EP1742870B1/de not_active Not-in-force
- 2005-04-19 AT AT05746642T patent/ATE378289T1/de not_active IP Right Cessation
- 2005-04-19 WO PCT/FR2005/050258 patent/WO2005105670A1/fr active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| DE602005003346T2 (de) | 2008-09-04 |
| FR2869028B1 (fr) | 2006-07-07 |
| FR2869028A1 (fr) | 2005-10-21 |
| WO2005105670A1 (fr) | 2005-11-10 |
| EP1742870A1 (de) | 2007-01-17 |
| DE602005003346D1 (de) | 2007-12-27 |
| EP1742870B1 (de) | 2007-11-14 |
| ES2296181T3 (es) | 2008-04-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| ATE356132T1 (de) | Verfahren zur reinigung von thiophenen | |
| DE60238615D1 (de) | Metallurgisches silizium hoher reinheit und verfahren zu seiner herstellung | |
| UA86168C2 (uk) | Спосіб і пристрій для рафінування розплавленого матеріалу | |
| ATE509718T1 (de) | Verfahren zur herstellung poröser metallkörper | |
| WO2003072284A3 (en) | Method of removing casting defects | |
| EA200970275A1 (ru) | Способ и устройство очистки низкокачественного кремнийсодержащего материала | |
| ATE378289T1 (de) | Verfahren und vorrichtung zur herstellung von blöcken aus halbleitermaterial | |
| ATE393245T1 (de) | Verfahren zur reinigung eines schmelzflüssigen metalls | |
| WO2010065401A3 (en) | Purification of silicon by electric induction melting and directional partial cooling of the melt | |
| EA200900810A1 (ru) | Способ получения равномерно кристаллизованных гранулятов из поликонденсата | |
| DE60024666D1 (de) | Herstellungsverfahren für poröse metallgegenstände | |
| WO2011060450A3 (en) | Methods for purifying metallurgical silicon | |
| ATE309878T1 (de) | Giesssystem und giessverfahren für hochreinen und feinkörnigen metallguss | |
| EP1101552A3 (de) | Hochrein keimbildend gegossener Metallformkörper | |
| DE60316791D1 (de) | Verfahren zur aufreinigung von lanzoprazol | |
| ATE475724T1 (de) | Kristallisationsverfahren zur reinigung eines schmelzflüssigen metalls, insbesondere rezyklierten aluminiums | |
| WO2005071128A3 (de) | Verfahren zum herstellen von gussbauteilen | |
| WO2008078043A3 (fr) | Procede et installation de fabrication de blocs d'un materiau semiconducteur | |
| DE502004008347D1 (de) | Verfahren zur herstellung eines kieselsäuregranulates | |
| WO2008070887A3 (en) | Method and apparatus for producing crystal grade anhydrous rare earth halides | |
| DE502005009647D1 (de) | Verfahren zum herstellen eines gussbauteils | |
| WO2008055490A3 (de) | Vertikalgussvorrichtung zur herstellung von formteilen | |
| ATE380083T1 (de) | Verfahren und vorrichtung zum entfernen von schlacke | |
| ATE426048T1 (de) | Verfahren zur herstellung einer gerichtet erstarrten wasserstoff-speicher-legierung | |
| ATE350188T1 (de) | Getter auf grund von intermetallischen verbindungen sowie verfahren zu dessen herstellung |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |