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ATE115649T1 - Cvd-diamantsbeschichtete ringelemente und verfahren zu ihrer herstellung. - Google Patents

Cvd-diamantsbeschichtete ringelemente und verfahren zu ihrer herstellung.

Info

Publication number
ATE115649T1
ATE115649T1 AT90125424T AT90125424T ATE115649T1 AT E115649 T1 ATE115649 T1 AT E115649T1 AT 90125424 T AT90125424 T AT 90125424T AT 90125424 T AT90125424 T AT 90125424T AT E115649 T1 ATE115649 T1 AT E115649T1
Authority
AT
Austria
Prior art keywords
gaseous mixture
cvd diamond
annular interior
chamber
manufacture
Prior art date
Application number
AT90125424T
Other languages
English (en)
Inventor
William Frank Banholzer
Roger Neal Johnson
Gary Lee Leonard
Richard Lloyd Mehan
Clifford Lawrence Spiro
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Application granted granted Critical
Publication of ATE115649T1 publication Critical patent/ATE115649T1/de

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04Coating on selected surface areas, e.g. using masks
    • C23C16/045Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/18Epitaxial-layer growth characterised by the substrate
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/13Hollow or container type article [e.g., tube, vase, etc.]
    • Y10T428/131Glass, ceramic, or sintered, fused, fired, or calcined metal oxide or metal carbide containing [e.g., porcelain, brick, cement, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
AT90125424T 1990-01-16 1990-12-24 Cvd-diamantsbeschichtete ringelemente und verfahren zu ihrer herstellung. ATE115649T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US46481890A 1990-01-16 1990-01-16

Publications (1)

Publication Number Publication Date
ATE115649T1 true ATE115649T1 (de) 1994-12-15

Family

ID=23845357

Family Applications (1)

Application Number Title Priority Date Filing Date
AT90125424T ATE115649T1 (de) 1990-01-16 1990-12-24 Cvd-diamantsbeschichtete ringelemente und verfahren zu ihrer herstellung.

Country Status (9)

Country Link
US (1) US5508071A (de)
EP (1) EP0437830B1 (de)
JP (1) JPH04214869A (de)
KR (1) KR910014542A (de)
AT (1) ATE115649T1 (de)
CA (1) CA2031098A1 (de)
DE (1) DE69015146T2 (de)
IE (1) IE66256B1 (de)
ZA (1) ZA9121B (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2087765A1 (en) * 1992-02-07 1993-08-08 David E. Slutz Method for producing uniform cylindrical tubes of cvd diamond
CA2090371A1 (en) * 1992-03-27 1993-09-28 William Frank Banholzer Water jet mixing tubes used in water jet cutting devices and method of preparation thereof
JPH0625398U (ja) * 1992-08-07 1994-04-05 住友電装株式会社 Cvdダイヤモンド被覆を具えたガイドリング
JPH07238483A (ja) * 1994-02-23 1995-09-12 Osaka Diamond Ind Co Ltd 線条体用ガイド
US5551277A (en) * 1994-09-23 1996-09-03 General Electric Company Annular diamond bodies
US5890279A (en) * 1996-05-13 1999-04-06 Tenryu Technics Co., Ltd. Abutment member with a diamond film for use in electronic component placement apparatus
US6071597A (en) * 1997-08-28 2000-06-06 3M Innovative Properties Company Flexible circuits and carriers and process for manufacture
US6459043B1 (en) 2001-03-29 2002-10-01 3M Innovative Properties Company Flexible circuit with electrostatic damage limiting feature and method of manufacture
US6815620B2 (en) 2001-03-29 2004-11-09 3M Innovative Properties Company Flexible circuit with electrostatic damage limiting feature
US6995954B1 (en) 2001-07-13 2006-02-07 Magnecomp Corporation ESD protected suspension interconnect
FR2850116A1 (fr) * 2002-12-02 2004-07-23 Alesages Diamant Carbure Adc Reacteur pour la synthese de diamant assistee par plasma micro-onde et filieres de trefilage traitees dans un tel reacteur
US7489493B2 (en) * 2003-12-01 2009-02-10 Magnecomp Corporation Method to form electrostatic discharge protection on flexible circuits using a diamond-like carbon material
EP2511229B1 (de) * 2011-04-12 2017-03-08 GFD Gesellschaft für Diamantprodukte mbH Flankenverstärktes mikromechanisches Bauteil
US11540432B2 (en) 2019-09-26 2022-12-27 Applied Materials, Inc. Ultrathin conformal coatings for electrostatic dissipation in semiconductor process tools

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4483892A (en) * 1981-12-16 1984-11-20 General Electric Company Wear resistant annular insert and process for making same
DE3690606T (de) * 1985-11-25 1988-08-25
US4960643A (en) * 1987-03-31 1990-10-02 Lemelson Jerome H Composite synthetic materials
DE3932828C1 (de) * 1989-09-30 1990-08-30 Nukem Gmbh, 6450 Hanau, De
EP0459425A1 (de) * 1990-05-30 1991-12-04 Idemitsu Petrochemical Company Limited Verfahren zur Herstellung von Diamanten
DE4212762A1 (de) * 1992-04-16 1993-10-21 Fischer Artur Werke Gmbh Anker zur Verankerung mittels einer Verbundmasse
US5314652A (en) * 1992-11-10 1994-05-24 Norton Company Method for making free-standing diamond film

Also Published As

Publication number Publication date
CA2031098A1 (en) 1991-07-17
DE69015146D1 (de) 1995-01-26
US5508071A (en) 1996-04-16
EP0437830B1 (de) 1994-12-14
KR910014542A (ko) 1991-08-31
IE66256B1 (en) 1995-12-27
ZA9121B (en) 1992-01-29
IE910119A1 (en) 1991-07-31
DE69015146T2 (de) 1995-05-24
EP0437830A1 (de) 1991-07-24
JPH04214869A (ja) 1992-08-05

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Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee